BFR52 Search Results

RF TRANSISTOR 1.5 GHZ

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
Contextual Info: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain

Transistor A111

Contextual Info: ^zmi-L.onau.cto'i , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR520 DESCRIPTION • High Power Gain ^^ • High Current Gain Bandwidth Product SOT- 2 3 package

bfr520

Contextual Info: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   

MRC026

Abstract: MRC025 BFR520T SC-75 mrc021 MRC027
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION • High power gain

Contextual Info: X3A-BFR520 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)6

15 w RF POWER TRANSISTOR NPN

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR520 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones,

Contextual Info: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

BFG520

Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
Contextual Info: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

philips MATV amplifiers

Abstract: MSB037 BFR521
Contextual Info: Philips Semiconductors APX ^53*131 DDBISbfl bDD Preliminary specification NPN 9 GHz wideband transistor BFR521 N AMER PHIL I PS /D IS CRE TE FEATURES fc^E D PINNING • High power gain • Low noise figure 1 emitter • High transition frequency 2 collector

BFR520

Abstract: 900MHZ
Contextual Info: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.

Contextual Info: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   

transistor bf 422 NPN

Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103
Contextual Info: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency

Contextual Info: Philips Semiconductors b t iS B 'lB l 0 0 3 n b fl bDD M i APX Preliminary specification NPN 9 GHz wideband transistor BFR521 N AMER PHILIPS/DISCRETE FEATURES b^E D ' PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency

NFE 02 352

Abstract: KMI 814 equivalent transistor 2 SA 1469 BFR520 BF 914 transistor MRA 843 MRA transistor transistor MJE -1103 ic LC 8712
Contextual Info: 2 ÏÏ£ â S iïi£ S ïiiS 0 0 2 5 5 3 3 N A P IE R 7 flb • P H IL IP S /D IS C R E T E APX Product specification D fe,7 E NPN 9 GHz wideband transistor FEATURES ^ BFR520 PINNING • High power gain • Low noise figure • High transition frequency

smd transistor jst

Abstract: BFG520 bfr505 BFG505 BFR50 BFR520 S221 Y parameters of transistors
Contextual Info: Philips Semiconductors 900 MHz low noise amplifier demoboard Appl,cation report 9 00 MHz LOW NOISE AMPLIFIER DEMOBOARD Summary: The p erformance of wideband transistors, BFG505 BFG520, BFR505, BFR520 is demonstrated in a 900 MHz Low N oise A m p l i f i e r in the frontend of a subscriber handset, (i.e.

MRA705

Abstract: BFR520 MSB003 BFR520 transistor
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. , radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low noise figure

BFG520

Abstract: BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit
Contextual Info: RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors for Pagers RF amp see Fig. 1 SOT323 SOT23 SOT143 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 BFG92A/X BFG25A/X BFG505/X BFG520/X MIX see RF amp O SC see RF amp ante nna \ /

Contextual Info: BFR52 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BFR520 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)6

Contextual Info: BFR521 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MRC026

Abstract: MRC027
Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D173 BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION • High power gain

MRC027

Abstract: MRC021 MRC025 BFR520T SC75 MRC028 MAM337
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T PINNING FEATURES • High power gain PIN DESCRIPTION

Contextual Info: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency

Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.