BFR PNP TRANSISTOR Search Results

BFR106

Abstract: 2I k
Contextual Info: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

sot-23 rks

Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration
Contextual Info: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!

bf 194 pin configuration

Abstract: Transistor BFR 35 BFr pnp transistor
Contextual Info: BFR 194 PNP Silicon RF Transistor 3
For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Complementary type: BFR 106 NPN 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

AYW marking code IC

Abstract: BF721T1G 306 marking code transistor
Contextual Info: BF721T1G PNP Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -300 Vdc Collector - Base Voltage VCBO -300

Transistor BFR

Abstract: PZTA96ST1G
Contextual Info: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO - 450 Vdc

Marking W1s

Abstract: bft92 w1s sot23
Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Type Marking Ordering Code

1N916

Abstract: MMBT3906LT1G MMBT3906LT3G
Contextual Info: MMBT3906LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage

marking p1S

Abstract: Q62702-F1488 GMA marking
Contextual Info: BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!

MMBT4403WT1G

Abstract: MMBT4403LT1
Contextual Info: MMBT4403WT1G Switching Transistor PNP Silicon Features • Moisture Sensitivity Level: 1  ESD Rating: Human Body Model; 4 kV, http://onsemi.com Machine Model; 400 V  These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR

Contextual Info: MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • COLLECTOR 3 Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

Contextual Info: MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SMMBT4403LT1G

Abstract: SMMBT4403L
Contextual Info: MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SMMBT2907ALT1G

Abstract: SMMBT2907AL SMMBT2907ALT
Contextual Info: MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • COLLECTOR 3 Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

SMMBT3906LT1G

Abstract: SMMBT3906L MMBT3906LT1-D MMBT3906L
Contextual Info: MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

E 94733

Abstract: AH-1 SOT23
Contextual Info: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!

Contextual Info: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFR99

Abstract: BFR99 transistor BFr pnp transistor BFy 90 transistor
Contextual Info: BFR99 SILICON PLANAR PNP WIDE BAND VHF/UHF AMPLIFIER The BFR 99 is a silicon planar epitaxial PNP transistor in Jedec T O -7 2 metal case, particu­ larly designed fo r wide band co m m o n -e m itte r linear am plifier applications up to 1 GHz. It features very high f T , very low reverse capacitance, very good cross-m odulation properties

BFR99

Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Noise figure Trans. Freq. Max ratings Polar. Type Main unction Package •c NF (MHz (mA) 1000 le f pg m (mA) (MHz) m 3 3.5 3 800 850 1000 typ 1200

BFQ transistors

Abstract: BFQ transistors 98 BFQ 58 BFQ57 BFQ196 bfq58 b20200 bfq59 siemens 350 98 5925B
Contextual Info: T-3 I"Oí SIE M EN S A K T I E N G E S E L L S C H A F 47E D • ñ 2 3 S bQ S G Ü 5 b 57 ô 2 « S I E G HF-Bipolar-Transistoren / RF Bipolar Transistors Metal Ceramic Package NPN ID (II B B □ B □ 'c P,o. h V mA mW GHz dB BFQ 57 BFQ 58 16 16 35 30

KJE SOT-23

Abstract: BF993 BFT92 KJE transistor BFT93 Transistor BFR 35 BF994 14 SOT-23 RF Transistors sot-23 BFS17n
Contextual Info: MOS field-effect transistors Type Characteristics Tamb = 25 ° C Maximum ratings N channel '•'bs V Pto, h mA 9ts mS mW °C G dB V Kds Package outlines f M Hz Iq mA Pin configu­ ration No. Type BF 989 20 30 150 200 12 1 6 ,5 15 7 800 13 S O T 143 BF 993

Contextual Info: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability

BCP69T1G

Abstract: AYW marking code IC
Contextual Info: BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.