BFCI53T Search Results

Philips MAB8021

Abstract: 8048 micro controller block diagram SCN8048 MAB8021
Contextual Info: NAPC/ SI6NETICS Signetics aiE D • bfci53T54 0Q5S33Ô ñ i 7 ^ ? - / 9 - ¿S' SCN8400 Series Single-Chip 8-Bit Microcontroller Product Specification Microprocessor Products DESCRIPTION FEATURES The SCN84XX family of microcontrollers is fabricated in NMOS. The family con­

Philips MAB8021

Abstract: MAB8021 8048 microcontroller processor 8048 TI 8048 CPU 8048 BASED 8048 pin details signetics N28 block diagram of 8048 microcontroller SCN8048
Contextual Info: NAPC/ SI6NETICS Signetics aiE D • bfci53T54 0Q5S33Ô ñ SCN8400 Series 17 W % i9 - ô S Single-Chip 8-Bit Microcontroller c Product Specification Microprocessor Products FEATURES • l2C serial I/O that can be used in single or multimaster systems serial I/O data and clock via

Contextual Info: N APIER PH IL IP S/ D IS C R ET E b^E D • bbSa^l DD3QSSS 7TM « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121

BbN20

Abstract: MSB003 BSN20
Contextual Info: • Philips Semiconductors — bbS3T31 a0237t,S Tib ■ N AUER P H I L I P S / D I S C R E T E APX _ „ Product specification b7E D N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,

TDA85630

Abstract: JLB671 TDA8563Q TDA8563Q Application
Contextual Info: bbS3<ì24 0CH3Sfc>7 14T « S I C 3 Philips Semiconductors Preliminary specification 2 x 40 W/2 Q stereo BTL car radio power amplifier with diagnostic facility TDA8563Q FEATURES • Thermally protected • Requires very few external components • Reverse polarity safe

A1s smd TRANSISTOR

Abstract: smd diode JC 9E 1px transistor crystal 11.059MHZ AKR 121 11.059mHz crystal oscillator 1E71 mab8051 mPC 514 smd diode code A1s
Contextual Info: NAPC/PHILIPS SEMICOND b3E ] • b b S 3 cJE4 □□0 2 51 1 3GD I SIC3 Philips Semiconductors Microcontroller Products Objective specification Low-voltage single-chip 8-bit microcontroller 83CL411 GENERAL DESCRIPTION FEATURES The83CL411 is manufactured in an

BFR94

Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency

BUK445

Abstract: K445 BUK445-500A BUK445-500B
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N ANER PHILIPS/DISCRETE D E V E L O P M E N T DATA □bE D • bbS3T31 0015147 b ■ PZ2327B15U This data sheet contains advance information and specifications are subject to change without notice. T-c 3 % - Q I MICROWAVE POW ER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broad­

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

2n4416 transistor spice

Abstract: 2n4416 transistor 2N4416 2N4416A 2N4416 equivalent MRC167 Transistor 2N4416A uhf vhf spice
Contextual Info: • ^53=131 OOEmCH b'n HIAPX P h ilip s S e m icon d u ctors 1 P rodu ct sp ecification N AUER PHILIPS/DISCRETE b7E N-channel field-effect transistor 2N4416; 2N4416A Q UICK R E F E R E N C E DATA FEATURES • Low noise SYM BOL • Interchangeability of drain and

1117 S Transistor

Abstract: sot122f
Contextual Info: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

Contextual Info: N AMER PHILIPS/DISCRETE tab53T31 OOSDESO S • BSE D BUK426-200A BUK426-200B PowerMOS transistor T - 3 7- I/ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies

PHILIPS CNX36

Abstract: optocoupler cnx36 cnx36 CNX35 PHILIPS CNX35 CNX35U CNX36U CNX39 CNX39U T-41-83
Contextual Info: CNX35 CNX36 CNX39 •I bbS3T31 005QT15 k N AÏ1ER PHILIPS/DISCRETE SSE D T ~ H \ ~ 8 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

48 VDC voltage regulator

Abstract: ECG1917 G1905 ECG1903 ECG1905 ECG1907 ECG1909 L040
Contextual Info: PHILIPS E C G INC ite D • bbS3Tsa ECG1903, ECG1905, ECG1907, ECG1909, ECG1917 Sem iconductors 3-Terminal, Negative V R .200" ■ 5.08 - i OIA. Features • N o external com ponents required • Internal short-circuit current lim iting • Internal therm al overload protection

41464 RAM

Abstract: equalizer digital communications ISI QFP80 SAA2003 SAA2013 SAA2023 SAA2023GP SAA2023H TDA1318 TDA1380
Contextual Info: bbSBTHM DD^BBSÖ 37S * S IC 3 Preliminary specification Philips Semiconductors Drive processor for DCC systems SAA2023 FEATURES D IG IT A L • Operating supply voltage: 4.5 to 5.5 V • Low power dissipation: 260 mW at 5.0 V • Single chip digital equalizer, tape formatting and error

BYX38-300

Abstract: BYX38 BYX38-300R
Contextual Info: IT N AMER PHILIPS/DISCRETE 2SE D H hhS3T31 □D22fiOcl b • BYX38 SERIES ' 7= 01-/7 SILICON RECTIFIER DIODES Silicon rec tifie r diodes in D O -4 m etal envelopes, intended fo r use in po w er re c tifie r ap plicatio ns. Th e series consists o f the fo llo w in g types:

Contextual Info: • bbSB^Bl 002H5CH 212 « A P X N AMER PHILIPS/DISCRETE b?E » - BCF70 J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level, low noise applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A

transistor 338

Abstract: BD333 BD337 BD332 BD331 BD336 458J IEC134 IR 334 about38
Contextual Info: J BD332; 334 BD336; 338 ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered