BF199 RF Search Results

BF199

Abstract: BF199 RF transistor NPN BF199 bf199 motorola BF199 transistor
Contextual Info: MOTOROLA Order this document by BF199/D SEMICONDUCTOR TECHNICAL DATA RF Transistor NPN Silicon BF199 COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage

BF199

Abstract: BF199 FAIRCHILD SEMICONDUCTOR BF199 fairchild transistor NPN BF199 BF199 RF
Contextual Info: BF199 BF199 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 25 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current

bf199 equivalent

Abstract: transistor Common Base configuration BF199 data bf199 s parameters RF NPN POWER TRANSISTOR 100MHz BF199 RF india
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

BF199

Abstract: MW front END transistor NPN BF199 transistor BF199 c 2579 transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE

BF199

Abstract: bF199 transistor data bf199 transistor NPN BF199 s parameters RF NPN POWER TRANSISTOR 100MHz
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

BF199 RF

Abstract: BF199 bF199 transistor transistor NPN BF199 transistor BF 199 transistor BF199 Bf 199 BF 199 transistor
Contextual Info: BF199 NPN Silicon Epitaxial Planar Transistor designed for RF applications; low feedback capacitance, especially suited for em itter-grounded IF stages in TV sets. max. Q5# 1,25 Plastic case ~ JEDEC TO -92 T O -18 compatible The case is impervious to light

BF199

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE

BFQ58

Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S

BF199 parameters

Abstract: BF199
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified DESCRIPTION

bf199 equivalent

Abstract: data bf199 RC-1008b transistor NPN BF199 bf199 test
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Transistor NPN Silicon BF199 COLLECTOR 1 3 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 21 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage

bf199 equivalent

Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Contextual Info: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40

BFT98

Abstract: BF255 transistors bfs17p BFQ71 BF199 BFS55A
Contextual Info: RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors V r CEO l c N=NPN /t NF P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74

bf199 equivalent

Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
Contextual Info: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40

transistor potencia

Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
Contextual Info: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP

BF199 RF

Abstract: bF199 transistor BF199 BF240 TO226AA
Contextual Info: BF199 CASE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M RATINGS R a tin g S ym b o l V alue U n it Co Ilector-E m itter Voltage VCEO 25 Vdc Collector-Base Voltage VcBO 40 Vdc Vdc Em itter-Base Voltage VEBO 4.0 Collector Current - Continuous ic 100 m Adc Total Device D issipation @ T a = 25°C

F240 transistor

Abstract: Transistor F240
Contextual Info: BF199 CASE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M RATINGS Sym bol Value U nit C o lle cto r-E m itte r Voltage VCEO 25 Vdc C ollector-B ase Voltage VCBO 40 Vdc E m itter-Base Voltage VEBO 4.0 Vdc C ollector C urrent - C ontinuous lc 100 m Adc Total Device D issipation (S> T a = 25°C

BF199

Contextual Info: BF199 CASE 29-04, STYLE 21 TO-92 T0-226AA M A X I M U M R A T IN G S Rating Symbol Value C o lle c to r -E m itte r V olta g e VCEO 25 Unit Vdc C o lle c to r-B a s e V olta g e VCBO 40 Vdc E m itte r-B a s e V olta g e vebo 4 .0 Vdc C o lle ctor C u rre n t - C o n tin u o u s

BF transistor

Abstract: M50C BF199 M-50C bF199 transistor
Contextual Info: NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR IV IIC R O E L -.E C 3 T R O IV IIC 2 S CASE T 0-92E BF199 i s an NPN s i l i c o n p l a n a r e p i t a x i a l t r a n s i s t o r d e s ig n e d f o r RF a m p l i f i e r s and v id e o IF a m p l i f i e r s in common e m it t e r c o n f i g u r a t i o n .

transistor SD335

Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Contextual Info: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen

bf199

Abstract: data bf199 BF199 RF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF T ransistor NPN Silicon COLLECTOR 1 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 25 Vdc C ollector-B ase Voltage v CBO 40 Vdc E m itte r-B a se Voltage v EBO 4.0 Vdc 'c 100 mAdc

n3904

Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in

PN3563

Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
Contextual Info: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700

Contextual Info: _ _ _ . böt T > U t.SD113D 0 0 3 1 5 2 8 ISA « N S C S RF Amplifiers Devices NPN PNP NATL SEnlC0N] discrete) h fE V CE0(Sutt) »C (Volts) Min (mA) Max Min Iq ^ c e mA (MHZ) Min C#|, PF Max *T V NF (dB) @ f Package Max MHz 2N3663 12 50 20 8.0 10 700

bf311

Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Contextual Info: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •