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BF11 Datasheets (182)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BF110	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	94.92KB	1
BF110	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	85.51KB	1
BF110	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF	188.69KB	2
BF110	Unknown	Vintage Transistor Datasheets	Scan	PDF	49.41KB	1
BF110	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	33.43KB	1
BF110	Unknown	Cross Reference Datasheet	Scan	PDF	33.26KB	1
BF1100	NXP Semiconductors	BF1100 - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS	Original	PDF	314.2KB	15
BF1100	Philips Semiconductors	Dual-Gate MOS-FET	Original	PDF	108.1KB	14
BF1100	Philips Semiconductors	Dual-gate MOS-FETs	Scan	PDF	382.69KB	12
BF1100,215	NXP Semiconductors	Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I_D: 30 mA; I_DSS: 8 to 13 mA; I_DSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V_DSmax: 14 V; Y_FS min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd	Original	PDF	314.22KB	15
BF1100A	Seiko Epson	Surface Mount Crystal Oscillators	Original	PDF	109.97KB	3
BF1100R	NXP Semiconductors	BF1100R - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS	Original	PDF	314.2KB	15
BF1100R	Philips Semiconductors	Dual-Gate MOS-FET	Original	PDF	108.1KB	14
BF1100R	Philips Semiconductors	Dual-gate MOS-FETs	Scan	PDF	382.69KB	12

BF1100R,215	NXP Semiconductors	Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I_D: 30 mA; I_DSS: 8 to 13 mA; I_DSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V_DSmax: 14 V; Y_FS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd	Original	PDF	314.22KB	15
BF1100R,235	NXP Semiconductors	Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I_D: 30 mA; I_DSS: 8 to 13 mA; I_DSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V_DSmax: 14 V; Y_FS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd	Original	PDF	314.22KB	15
BF1100RT/R	NXP Semiconductors	Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I_D: 30 mA; I_DSS: 8 to 13 mA; I_DSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V_DSmax: 14 V; Y_FS min.: 24 mS	Original	PDF	314.22KB	15
BF1100RTR	Philips Semiconductors	Dual-gate MOS-FET	Original	PDF	108.11KB	14
BF1100T/R	NXP Semiconductors	Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I_D: 30 mA; I_DSS: 8 to 13 mA; I_DSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V_DSmax: 14 V; Y_FS min.: 24 mS	Original	PDF	314.22KB	15
BF1100TR	Philips Semiconductors	Dual-gate MOS-FET	Original	PDF	108.11KB	14

...

BF11 Price and Stock

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NXP Semiconductors


NXP Semiconductors BF1118WR,115 Trans RF FET 3V 0.01A 4-Pin(3+Tab) CMPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	BF1118WR,115		589,606		1,190	1 - 10 - 100 - 1000 - 10000 $0.28	Buy Now
	BF1118WR,115		266,900		42	1 - 10 - 100 $0.14 1000 $0.14 10000 $0.14	Buy Now
Rochester Electronics	BF1118WR,115		589,606		1	1 - 10 - 100 $0.30 1000 $0.25 10000 $0.22	Buy Now
NXP Semiconductors BF1100WR,115 Trans RF MOSFET N-CH 14V 0.03A 4-Pin(3+Tab) CMPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	BF1100WR,115		63,430		1,611	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Rochester Electronics	BF1100WR,115		63,430		1	1 - 10 - 100 $0.22 1000 $0.19 10000 $0.17	Buy Now
Vyrian	BF1100WR,115		8,215			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NXP Semiconductors BF1108,215 Trans RF FET N-CH 3V 0.01A 4-Pin SOT-143B T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	BF1108,215		6,995		1,137	1 - 10 - 100 - 1000 - 10000 $0.29	Buy Now
	BF1108,215		4,234		1,137	1 - 10 - 100 - 1000 - 10000 $0.29	Buy Now
Rochester Electronics	BF1108,215		11,229		1	1 - 10 - 100 $0.32 1000 $0.26 10000 $0.24	Buy Now
NXP Semiconductors BF1102,115 Trans RF MOSFET N-CH 7V 0.04A 6-Pin TSSOP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	BF1102,115		5,780		1,140	1 - 10 - 100 - 1000 - 10000 $0.29	Buy Now
Rochester Electronics	BF1102,115		5,780		1	1 - 10 - 100 $0.32 1000 $0.26 10000 $0.23	Buy Now
Vyrian	BF1102,115		11,854			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NXP Semiconductors BF1118R,215 Trans RF FET 3V 0.01A 4-Pin(3+Tab) SOT-143R T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	BF1118R,215		3,000		1,304	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
	BF1118R,215		2,879		1,304	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
Rochester Electronics	BF1118R,215		6,597		1	1 - 10 - 100 $0.28 1000 $0.23 10000 $0.21	Buy Now

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BF11 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are	Original	bf1118 bf1118r bf1118w bf1118wr +2ot143b ot143r	PDF
dual gate fet Abstract: PHILIPS MOSFET MARKING dual gate mosfet Dual-Gate Mosfet Dual Gate MOSFET graphs MOSFET marking k2 dual PINNING-SOT363 dual gate mosfet in vhf amplifier "MARKING CODE W2" fet MARKING g2 Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips S em ico n d uctors P relim inary sp ecification Dual N-channel dual gate MOS-FET BF1102R FEA TU R E S P IN N IN G -S O T 3 6 3 • T w o low noise gain controlled am plifiers in a single package	OCR Scan	bf1102r ot363 sc-88 dual gate fet +9philips mosfet marking dual gate mosfet dual-gate mosfet dual gate mosfet graphs mosfet marking k2 dual pinning-sot363 dual gate mosfet in vhf amplifier marking code w2 fet marking g2	PDF
2SC9830 Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)	Original	205ao 92var 220ab a220ab +12ot-89 o-92var 2sc9830 2sc983y bsw69 2sc983-y bf119 mps-002 sk3244 bf117 bf305 a5t5550	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES BF1102; BF1102R	Original	mbd128 bf1102 bf1102r ot363 +1r77/03/pp14	PDF
"MARKING CODE MF" Abstract: marking ggc BF1100WR marking code mf dual-gate Contextual Info: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz	OCR Scan	bf1100wr ot343r 7110fi5b marking code mf +2marking ggc dual-gate	PDF
transistor marking NEP ghz Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors Product specification BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs FEATURES	Original	bf1105 bf1105r bf1105wr msb035 +5r77/03/pp15 transistor marking nep ghz marking code na mgm253 dual-gate	PDF
Contextual Info: Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner T o p view - Transceiver switching.	OCR Scan	bf1107 bf1107w msb003 ot323	PDF
Contextual Info: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	bf1100 bf1100r	PDF
mosfet K 2865 Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET	Original	m3d088 bf1107 sca60 115102/00/02/pp8 +3mosfet k 2865 philips rf mosfet depletion marking philips mosfet marking	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single	Original	mbd128 bf1102r 115102/00/02/pp12	PDF
mosfet K 2865 Abstract: BF1107 ic sc 6200 passive loopthrough Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification	OCR Scan	bf1107 115102/00/01/pp8 mosfet k 2865 ic sc 6200 +1passive loopthrough	PDF
transistor marking NEP ghz Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs	Original	bf1105 bf1105r bf1105wr sca56 +6117067/00/03/pp16 transistor marking nep ghz dk 2482 transistor marking code na mgm253 dual-gate	PDF
"MARKING CODE W1*" Abstract: BF1102 BF1102R n-channel dual 3010 marking code W2 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES	Original	mbd128 bf1102 bf1102r ot363 +4603504/03/pp16 marking code w1 n-channel dual 3010 marking code w2	PDF
dual-gate Abstract: BF1100 BF1100R marking code my Contextual Info: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	bf1100 bf1100r dual-gate marking code my	PDF

BF1101WR Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES PINNING	Original	bf1101 bf1101r bf1101wr msb035 +1r77/02/pp15	PDF
BF1100 Abstract: BF1100R 71hwfc dual-gate Contextual Info: Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R FEATURES • Specially designed for use at 9 to 12 V supply voltage and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.	OCR Scan	bf1100 bf1100r ot143 ot143r +271hwfc dual-gate	PDF
BF1118 Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are	Original	bf1118 bf1118r bf1118w bf1118wr +4ot143b ot143r diode marking s4 06 marking code cgk	PDF
BF1109 Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES PINNING	Original	bf1109 bf1109r bf1109wr msb035 +1r77/02/pp15	PDF
marking 550 sot143 Abstract: BF1100 BF1100R dual-gate Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to	Original	bf1100 bf1100r marking 550 sot143 dual-gate	PDF
BF1109 Abstract: BF1109R BF1109WR dual-gate Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs	Original	bf1109 bf1109r bf1109wr sca55 +2117067/00/02/pp16 dual-gate	PDF
CIC 9102 Abstract: "RF Switches" Philips MARKING CODE BF1108 BF1108R MBL027 DIODE marking S4 69 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R FEATURES • Specially designed for low loss RF switching	Original	bf1108 bf1108r msb014 ot143b +6ot143r cic 9102 rf switches philips marking code mbl027 diode marking s4 69	PDF
MOSFET 4466 Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES	OCR Scan	bf1102 ot363 mosfet 4466 4466 8 pin mosfet pin voltage +14466 mosfet	PDF
Contextual Info: Celebrating 10 years contribution to a greener world NXP’s RF switch BF1108 saved a year spending of energy of more than 1 million households. Nijmegen, Netherlands, March 17, 2009 – NXP Semiconductors, the independent semiconductor company founded by Philips, celebrates 10 years of contributing to a greener world enabled by	Original	bf1108 com/pip/bf1108	PDF
Contextual Info: 1 3 2 5 4 6 7 8 Global Connector Technology Ltd. - BF112: 2.00mm Pitch Socket, Dual Row, Surface Mount, Horizontal Dimensions Contacts A A B 4 4.3 2 6 6.3 4 8 8.3 6 10 10.3 8 12 12.3 10 14 14.3 12 16 16.3 14 18 18.3 16 20 20.3 18 22 22.3 20 24 24.3 22 26 26.3	Original	bf112 bf030 bf045 bf050 +2bf060 bf135	PDF

BF11 Search Results

BF11 Datasheets (182)

BF11 Price and Stock

NXP Semiconductors BF1118WR,115

NXP Semiconductors BF1100WR,115

NXP Semiconductors BF1108,215

NXP Semiconductors BF1102,115

NXP Semiconductors BF1118R,215

BF11 Datasheets Context Search

dual gate fet

2SC9830

"MARKING CODE MF"

transistor marking NEP ghz

mosfet K 2865

mosfet K 2865

transistor marking NEP ghz

"MARKING CODE W1*"

dual-gate

BF1101WR

BF1100

BF1118

BF1109

marking 550 sot143

BF1109

CIC 9102

MOSFET 4466