BF11 Search Results

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

dual gate fet

Abstract: PHILIPS MOSFET MARKING dual gate mosfet Dual-Gate Mosfet Dual Gate MOSFET graphs MOSFET marking k2 dual PINNING-SOT363 dual gate mosfet in vhf amplifier "MARKING CODE W2" fet MARKING g2
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips S em ico n d uctors P relim inary sp ecification Dual N-channel dual gate MOS-FET BF1102R FEA TU R E S P IN N IN G -S O T 3 6 3 • T w o low noise gain controlled am plifiers in a single package

2SC9830

Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES BF1102; BF1102R

"MARKING CODE MF"

Abstract: marking ggc BF1100WR marking code mf dual-gate
Contextual Info: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz

transistor marking NEP ghz

Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors Product specification BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs FEATURES

Contextual Info: Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner T o p view - Transceiver switching.

Contextual Info: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

mosfet K 2865

Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single

mosfet K 2865

Abstract: BF1107 ic sc 6200 passive loopthrough
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

transistor marking NEP ghz

Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

"MARKING CODE W1*"

Abstract: BF1102 BF1102R n-channel dual 3010 marking code W2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES

dual-gate

Abstract: BF1100 BF1100R marking code my
Contextual Info: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BF1101WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES PINNING

BF1100

Abstract: BF1100R 71hwfc dual-gate
Contextual Info: Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R FEATURES • Specially designed for use at 9 to 12 V supply voltage and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

BF1118

Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

BF1109

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES PINNING

marking 550 sot143

Abstract: BF1100 BF1100R dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to

BF1109

Abstract: BF1109R BF1109WR dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

CIC 9102

Abstract: "RF Switches" Philips MARKING CODE BF1108 BF1108R MBL027 DIODE marking S4 69
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R FEATURES • Specially designed for low loss RF switching

MOSFET 4466

Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES

Contextual Info: Celebrating 10 years contribution to a greener world NXP’s RF switch BF1108 saved a year spending of energy of more than 1 million households. Nijmegen, Netherlands, March 17, 2009 – NXP Semiconductors, the independent semiconductor company founded by Philips, celebrates 10 years of contributing to a greener world enabled by

Contextual Info: 1 3 2 5 4 6 7 8 Global Connector Technology Ltd. - BF112: 2.00mm Pitch Socket, Dual Row, Surface Mount, Horizontal Dimensions Contacts A A B 4 4.3 2 6 6.3 4 8 8.3 6 10 10.3 8 12 12.3 10 14 14.3 12 16 16.3 14 18 18.3 16 20 20.3 18 22 22.3 20 24 24.3 22 26 26.3