BF1102 |
|
NXP Semiconductors
|
BF1102 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SC-88, 6 PIN, FET RF Small Signal |
Original |
PDF
|
140.78KB |
14 |
BF1102 |
|
Philips Semiconductors
|
Dual N-Channel Dual Gate MOS-FET |
Original |
PDF
|
127.02KB |
16 |
BF1102 |
|
Philips Semiconductors
|
Dual N-channel dual gate MOS-FET |
Original |
PDF
|
155.13KB |
12 |
BF1102,115 |
|
NXP Semiconductors
|
Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
Original |
PDF
|
127.01KB |
16 |
BF1102,115 |
|
NXP Semiconductors
|
BF1102 - Dual N-channel dual gate MOS-FETs, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" |
Original |
PDF
|
140.78KB |
14 |
BF1102R |
|
NXP Semiconductors
|
BF1102R - Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS |
Original |
PDF
|
140.78KB |
14 |
BF1102R |
|
Philips Semiconductors
|
Dual N-Channel Dual Gate MOS-FET |
Original |
PDF
|
127.02KB |
16 |
BF1102R |
|
Philips Semiconductors
|
Dual N-channel dual gate MOS-FET |
Scan |
PDF
|
389.26KB |
10 |
BF1102R,115 |
|
NXP Semiconductors
|
Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
Original |
PDF
|
127.01KB |
16 |
BF1102R,115 |
|
NXP Semiconductors
|
BF1102 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SMD, UMT6, SC-88, 6 PIN, FET RF Small Signal |
Original |
PDF
|
140.78KB |
14 |
BF1102R,135 |
|
NXP Semiconductors
|
Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd |
Original |
PDF
|
127.01KB |
16 |
BF1102R,135 |
|
NXP Semiconductors
|
BF1102R - Dual N-channel dual gate MOS-FETs, SOT363 Package, Standard Marking, Reel Pack, SMD, Large |
Original |
PDF
|
140.78KB |
14 |
BF1102RT/R |
|
NXP Semiconductors
|
Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS |
Original |
PDF
|
127.01KB |
16 |