BF 429 Search Results

transistor 2SC930

Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
Contextual Info: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106

SD76

Abstract: sd75
Contextual Info: SINCE 1981 Part No. Digit Size Common Anode Absolute Maximum Ratings Chip Common Cathode 1.80" Single-Digit BS-AB0EGRD BS-CB0EGRD 1.80" Overflow BF-AB0EGRD BF-CB0EGRD Material/Emitted Color Electro-optical Data At 10mA Drawing Peak Vf Iv. Typ. No. Wave Pd

TC4543BP

Abstract: TC4543
Contextual Info: TC4543BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4543BP/TC4543BF BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER For liquid Crystals TC4543BP/BF is 7 segment latch/decoder/driver which can directly drive field effect type liquid crystal display element (FEM type) and equipped with

Contextual Info: B>,/ 96@<6B:42;F A62;65 @6;2F E:B9 6AB23;:A965 @6;:23:;:BF 970.- E[Wjkh[i z EW_bkh[ hWj[ YWd X[ J[l[b K z @ffhel[Z Xo FIA:9A z G_]^ WcX_[dj Wffb_YWX_b_jo z @bb c[jWb m[bZ[Z YedijhkYj_ed z Eki_d] iebZ[h_d] WdZ cWha[Z Xo bWi[h 2<3:6=B 252?B23:;:BF Z @cX_[dj ]hWZ[

Contextual Info: B>-/ BF?6 9:89 B6<?6@2BC@6 96@<6B:42;F A62;65 @6;2F 970. E[Wjkh[i } @cX_[dj j[cf[hWjkh[ YWd X[ 5<4 } G_]^ WcX_[dj Wffb_YWX_b_jo } G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h 2<3:6=B 252?B23:;:BF 4>=B24B 52B2 @cX_[dj j[cf[hWjkh[ x:9 Gkc_Z_jo je 5<4 =< ,~84 827= aNW

Contextual Info: f f MÊm H B K 'ji ;[;K 41 L m i 1î e d _ S iz e 1.80" 2.30" Cathode BF-A BO EG RD BF-CBO EGRD [ .I I IJI.S P L A i A bso lu ti M a x im u m K atin gs Peak \V ;ive Length À Ptnin) A a Pd in m i mW) E le c t r o - o p t i c a l u a i a t A t lUrriA) ^

SVC621

Abstract: svc511d-14a SVC391D-05A SVC391D07A
Contextual Info: WORLD PRODUCTS bf lE INC nm B bfl D DQDOnfl IUP I ÔQT Transient Part Size RMS Vacm Vdcm mm Volts (Volts) Number DC Rated Single Pulse Average Peak at Varistor Voltage Max Clamping Typical Transient Energy Power Current (1 mADC) Tolerance Voltage at Current

BCW91

Abstract: bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C
Contextual Info: BCW 90A, B,C BCW 91 A, B NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P ITAXIAL • LF Amplification A m plifica tio n BF v CEO MOV BCW 90 160 V BCW 91 0,8 V ■c h21E 150 mA-2 V Maximum power dissipation Plastic case

A965

Abstract: Y429
Contextual Info: B>,/ 96@<6B:42;F A62;65 @6;2F E:B9 6AB23;:A965 @6;:23:;:BF 970.- E[Wjkh[i z EW_bkh[ hWj[ YWd X[ J[l[b K z @ffhel[Z Xo FIA:9A z G_]^ WcX_[dj Wffb_YWX_b_jo z @bb c[jWb m[bZ[Z YedijhkYj_ed z Eki_d] iebZ[h_d] WdZ cWha[Z Xo bWi[h Bed\ehc je FIA:9A1= . Dgk_lWb[dj je KHJ1NOE17=45:/

A965

Abstract: BEM 45 944sh
Contextual Info: 92;7,A:G6 4@FAB2; 42= 96@<6B:42;F A62;65 @6;2F E:B9 6AB23;:A965 @6;:23:;:BF 970/-. D[Wjkh[i z z z z z z DW_bkh[ hWj[ YWd X[ J[l[b K JeWZ YWd X[ 9? 6<SZ2Y F_]^ fkh[ d_jhe][d fhej[Yj_ed F_]^ WcX_[dj Wffb_YWX_b_jo ?bb c[jWb m[bZ[Z YedijhkYj_ed0 F[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h

9001X1

Contextual Info: 278 £gS i V c * I m 18 » ^ >j S I S yj g « « D> • ' VU1 5 q Cl ° Bit lui n m 6 h- e ' m » i » <r f> M » » Bf «V 1+ 8 ms ? 5¡ r> $ n m Or m n Or <h - 4 i o i T A I O YO kf YU D S $ E N * * $ M fa} M m M EtÜm . . & ¡gs . U1 o ü SÉf gf .

531620

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC5316200BP/BF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD 8 B IT C M O S M A S K R O M X D ESCRIPTIO N T h e T C 5 3 1 6 2 0 0 B P / B F is a 1 6 ,7 7 7 ,2 1 6 b its re a d on ly m em ory o rgan ize d a s 1 ,0 4 8 ,5 7 6 w ords by 16

LM 7526

Abstract: EZ 941 EZ 728 ez 748 536GN 569T 694T SJ80 LM3l MT46V32M16CY-5B IT:J
Contextual Info: -+y+~ 57|0.1.{674* -.,- 329*4 4*/{: +?<IJG?H P P P P E`c\ Lf2> D57895; P P P P E`c\ Lf2> 8445849; P }2./ ~{6{ }216{}6 ~{6{ LM> 54@ 694T@B36<TCB 7 6269 427 72= 69 o .5 54,/ LM3LB> ;@37@ 694T@B 9 72;9 429 :29 ;4 o .5 54,/ : 8294 42: ;2< 544 o .5 54,/ 54@ = :2;9

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

EZ 644

Abstract: F 9624 CD kd 502 QHQM58445 6T-5 EZ 929
Contextual Info: 1,z{ /0./ 65<,7 2}9*/04. 7,2}= -A>LMJAK R SB7 Zfdgc`Xek `e XZZfi[XeZ\ n`k_ HDB :6499175 R Qkife^ i\j`jkXeZ\ XY`c`kp kf j_fik Z`iZl`k Zlii\ek Xk 7:44@ .74 k`d\j dfi\ k_Xe iXk\[ cfX[ Zlii\ek/ R 564@ jn`kZ_`e^ ZXgXY`c`kp R G\Xmp cfX[ lg kf 77268bT@ R 8bT [`\c\Zki`Z jki\e^k_

EZ 642

Abstract: EZ 644 9444S 61428
Contextual Info: /-y{y-/x/-y{y-+ 2030}896, /0./ 54;,6 6,1}< -A>KLIAJ S 5:@ jn`kZ_`e^ ZXgXY`c`kp.GE585EG/ S 9bS [`\c\Zki`Z jki\e^k_ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ S Jfn _\`^_k> 642:dd S 5 gfc\ .GE585EG/0 6 gfc\j .GE585EC/ Zfe]`^liXk`fej XmX`cXYc\ S PfZb\kj XmX`cXYc\ S TXj_ k`^_k Xe[ ]clo giff]\[ kpg\j XmX`cXYc\

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: 1/} 9;+4252*:;8. 25:.84.-2*:. 76=.8 8.3*> /B?MNKBL T 54B lpbm\abg` \ZiZ[bebmr T 8dV bfinel^ pbmalmZg] ohemZ`^ .[^mp^^g \hbe Zg] \hgmZ\ml/ T 5 Ghkf B Zg] 5 Ghkf D \hg_b`nkZmbhgl Gbe^ Nh2>F57895; T Sn[fbgbZmnk^0 ab`a l^glbmbo^0 PDC eZrhnm T WZla mb`am mri^ _hk ZnmhfZmb\ pZo^ lhe]^kbg`

T12B1

Abstract: h607 H603 1803e H606 H600 H604 MC10H600 BF 273 transistor h601
Contextual Info: AN1402/D MC10/100H640 Translator Family I/O SPICE Modeling Kit Prepared by: Debbie Beckwith ECL Applications Engineering http://onsemi.com APPLICATION NOTE structure, respectively. Six different output buffers represent all of the output buffers for the H60x series of translators.

Contextual Info: HA16811ANT/H A16811 AMP SLIC IC for PBX Applications Bipolar linear process monolithic SLIC IC for PBX applications »in Arrangement HA16811ANT Features • • • • • • • Basic Functions: Internal battery feed control B , loop supervi­ sion (S) and 2 W-4 W conversion

H604

Abstract: FPS001 IBM POS power supply schematics AN1402 h607 H600 H606 MC10H600 H603 h601 transistor
Contextual Info: AN1402 Application Note MC10/100H600 Translator Family I/O SPICE Modeling Kit Prepared by Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect situations for designs which utilize the translator circuits

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT T P s |u c ° n m o n o l it h ic TC4543BP/TC4543BF BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER For liquid Crystals T C 4 5 4 3 B P / B F is 7 segment l a t c h / d e c o d e r / d r i ver w hich can d i r e c t l y drive field effect type liquid

Q5627

Abstract: ho2 2312 IRO44
Contextual Info: :<,5363+;<9/ 36;/95/.3+;/ 87>/9 2312 ;/58/9+;<9/ 9/4+? 20~}0+{; .JYC176FA1S/ 0C@MNKCL Z Hb`a m^fi^kZmnk^> 549 Z 9A lpbm\abg` \ZiZ[bebmr Z 5 Fhkf A \hg_b`nkZmbhg Z Ck^^iZ`^3\e^ZkZg\^ ]blmZg\^@<ff Fbe^ Nh2>E57895; Z 9dU ]b^e^\mkb\ lmk^g`ma .[^mp^^g \hbe Zg] \hgmZ\ml/

ZL 264

Abstract: ge 829 5G05
Contextual Info: 1/}// .IYB1;EE/ 9;+4252*:;8. 25:.84.-2*:. 76=.8 8.3*> /C@MNKCL T 54@ lpbm\abg` \ZiZ[bebmr T Khp \hlm0 RfZee iZ\dZ`^ T 5 Ehkf @ Zg] 5 Ehkf B \hg_b`nkZmbhgl Ebe^ Mh2>D57895; T VZla mb`am Zg] _enq ikhh_^] mri^l ZoZbeZ[e^ T Dgobkhgf^gmZe _kb^g]er ikh]n\m .QhGR \hfiebZgm/