BD401 Search Results

BD401N-BD401P

Contextual Info: BD401N-BD401P 40 AMP Block Diodes 特征 BLOCK DIODE FEATURES .大电流承受能力.High current capability .高压利用能力.High voltage available .玻璃被钝化的压模结构.Glass passivated die construction .高浪涌承受能力.High surge current capability

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

BD401

Abstract: bq4015 bq4015Y
Contextual Info: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS

waveguide R120 WR75

Abstract: 4 port circulator high power duplexer 4xm4 IR receiver WR2300 NE1101 WR975 Isolator temex NFC ferrite antenna uhf circulator mini circulator
Contextual Info: FERRITE DEVICES Contents FERRITE DEVICES CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE CIRCULATORS AND ISOLATORS SPECIFIC REQUEST . . . . . . . . . . . . . . . . . . 15-2 TECHNICAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15-3

Contextual Info: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS

BD4015

Abstract: BD401 bq4015 bq4015Y bq4013
Contextual Info: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

ba1010

Abstract: Isolator temex BA3012 BA3010 BC1080 BA1011 temex Microstrip Circulators ba3013 BA-4113 BB3019
Contextual Info: COAXIAL DEVICES VHF / UHF coaxial circulators & isolators General description TEMEX supplies a wide range of coaxial HF/VHF and UHF circulators covering the frequency range down to 27 MHz. TEMEX uses only in-house produced ferrite materials and therefore offers state-of-the-art

mini circulator

Abstract: n type male connector BC1080 it27 BA-4113 BA4140 BC3080 Isolator temex 3 port coaxial circulators & isolators ba3013
Contextual Info: COAXIAL DEVICES VHF / UHF coaxial circulators & isolators General description TEMEX supplies a wide range of coaxial HF/VHF and UHF circulators covering the frequency range down to 27 MHz. TEMEX uses only in-house produced ferrite materials and therefore offers state-of-the-art

Contextual Info: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS

bq4015

Abstract: bq4015Y
Contextual Info: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS

BD4015

Contextual Info: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS

bq4015

Abstract: bq4015Y
Contextual Info: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP