bd237
Abstract: BD235 0016114E BD236 BD238 JESD97
Contextual Info: BD235 BD237 NPN power transistors Features • . NPN transistors Applications ■ Audio, power linear and switching application Description 3 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain
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bd235bd237bd236bd238+4ot-32o-1260016114ejesd97
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BD235
Abstract: bd237 equivalent BD237 BD238 4189
Contextual Info: BD235 BD237 Low voltage NPN power transistors Features • Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The devices are manufactured in Planar technology with “Base Island” layout. The
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bd235bd237ot-32o-126+3bd238bd237 equivalent4189
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Circuit details of BD237 equivalent
Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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bd237tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488circuit details of bd237 equivalentbd237-10bd237 similarbu108bd237 equivalent2sc7bd237 pin assignment2sd4242sc495bux98a
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m3870
Abstract: TDA2320 equivalent 2x1N4148 TDA2320 bpw41 bd237 equivalent TV IR remote control circuit diagram BC377 equivalent BC377 BPW41 circuit application
Contextual Info: TDA2320 PREAMPLIFIER FOR INFRARED REMOTE CONTROL SYSTEMS DESCRIPTION The TDA2320is a monolithic integratedcircuit in Dip package especially designedto amplify the IR signal in remote controlled TV or radio sets. It directly interfaces the digital control circuitry.
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tda2320tda2320ism709a/m710a/mosm3870+8tda2320 equivalent2x1n4148bpw41bd237 equivalenttv ir remote control circuit diagrambc377 equivalentbc377bpw41 circuit application
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BPW41 circuit
Abstract: BPW41 remote control a1bb BC377 BPW41 circuit application 2x1N4148 BPW41
Contextual Info: TDA2320 PREAMPLIFIER FOR INFRARED REMOTE CONTROL SYSTEMS DESCRIPTION The TDA2320 is a monolithicintegrated circuit in Dip package specially designed to amplify the IR signal in remote controlled TV or radio sets. It directly interfaces with the digital control circuitry.
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tda2320m709a/m710a/mosm3870tda2320n+7bpw41 circuitbpw41 remote controla1bbbc377bpw41 circuit application2x1n4148bpw41
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XL1225 equivalent
Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055
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2n29552sa9522n30552sb1426+112n3417xl1225 equivalent2n3053 equivalentbf422 equivalentbc238 equivalent2n6397 equivalent2n5551 equivalent2sb772 equivalentbc109 bc184 bc5492sd880 equivalentbt169 equivalent
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BD238
Abstract: bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458
Contextual Info: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The device is manufactured in planar technology with “Base Island” layout. The resulting transistor
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bd238ot-32o-126bd237+4bd237 equivalentbd238 equivalent0016114etransistor b c 458
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Contextual Info: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor s ct Applications ■ 1 u d o Audio, power linear and switching applications 3 2 r P e SOT-32 (TO-126) Description The device is manufactured in planar technology
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MKT .22K 250V X2
Abstract: BD237 ST7536 T1002N TOKO T1002 rohde schwarz suf2 BD238 TL071C filter 60hz circuit VT222
Contextual Info: APPLICATION NOTE ST7536 By Joël HULOUX SUMMARY Page I INTRODUCTION TO THE ST7536. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II III ST7536 DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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st7536mkt .22k 250v x2bd237t1002n+6toko t1002rohde schwarz suf2bd238tl071cfilter 60hz circuitvt222
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TOKO T1002
Abstract: rohde schwarz suf2 powerline schematic diagram TOKO T1002N TL071 IC 7536-10.eps STYROFLEX ST7536 application note powerline carrier transmission logic diagram of 74LS245
Contextual Info: APPLICATION NOTE ST7536 By Joël HULOUX SUMMARY Page I INTRODUCTION TO THE ST7536. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II ST7536 DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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st7536toko t1002rohde schwarz suf2powerline schematic diagram+7toko t1002ntl071 ic7536-10.epsstyroflexst7536 application notepowerline carrier transmissionlogic diagram of 74ls245
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ST7536 application note
Abstract: powerline schematic diagram TOKO T1002N TOKO T1002 powerline schematic diagram ST7536 application schematic diagram for heater power controller 1.5ke transil pin configuration of ic tl071 ST7536 TOKO T1002 transformer
Contextual Info: APPLICATION NOTE ST7536 By Joël HULOUX SUMMARY Page I INTRODUCTION TO THE ST7536. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II ST7536 DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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st7536st7536 application notepowerline schematic diagramtoko t1002n+6toko t1002powerline schematic diagram st7536 applicationschematic diagram for heater power controller1.5ke transilpin configuration of ic tl071toko t1002 transformer
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BU108
Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS
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2n58772n5878tip73btip74+16tip74atip74btip75tip75atip75btip75cbu10862-3-1-22n555mj43612sc889mj1000mj3237bdw94bd95dts801
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BU108
Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A
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buv20tip73btip74tip74a+12tip74btip75tip75atip75btip75c2n6488bu1082sc194transistor bc 5742sc1419bu326bu100
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transistor 3569
Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —
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bandwi32tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488transistor 3569t4 3570 dpakbu 508 transistorbu108bdw93cst t4 3580transistor t4 3570bu326bu100mj*15033
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automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
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bu323aptip73btip74tip74a+15tip74btip75tip75atip75btip75cautomotive ignition tip162bc337 cross-referencebu108bd390 cross referencereplacement transistor bc337bux48a2sd1815 "cross referencetip102 darlington transistormotorola mj15022mj1000
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BU108
Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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bd676bd675bd676abd678+10bd678abd680bd680abd682tip73bbu108transistor replacement guide bd676bd676a application notebu326bu100
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2SC1419
Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.
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mje350tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1419tip54mj1000mj15024 mj150252sc1943se9302mje24822sd675bu326bu108
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Motorola case 77
Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc
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mje200mje210tip73btip74+13tip74atip74btip75tip75atip75btip75cmotorola case 772n3055bu1082sc15bdw93c applicationsbu326bu100
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2SA1046
Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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bd437bd441bd438bd440+16bd442tip73btip74tip74atip74btip752sa1046bd4192sc1943bd4202bd4202sc20712sc12372sa939bd1332sc1903
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2SC124
Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS
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2n51912n51922n51942n5195+15tip73btip74tip74atip74btip75tip75a2sc1242n5195 motorolabu108bd238 equivalent2sa1046tip3055 equivalentbu806 complementbu326bu100
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electronic ballast with MJE13003
Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light
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bud43btip73btip74tip74a+15tip74btip75tip75atip75btip75celectronic ballast with mje13003bu108application notes mje13005npn power darlington transistors high voltage high icm to-247mje13003 ballastmje24822sd6752sc1419bu326bu100
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2N5037
Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi
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bd808bd810tip73btip74+16tip74atip74btip75tip75atip75btip75c2n50372sc19032sc2159mje15033 replacementbd7782mje2050sdt76052sa835bd279svt6251
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c 3421 transistor
Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability
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bu208atip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488c 3421 transistorbu108transistor equivalent of bu406equivalent transistor 2n3055bu126 motorola2sd165bc 574 transistord 1163 a2n4906 motorola
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MJ15003 300 watts amplifier
Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications
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mje340mje350mjd340mjd350+16tip73btip74tip74atip74btip75tip75amj15003 300 watts amplifierst t4 3580mjd340 stmje342sd478d45h8 equivalentbux98ase9302mje24822sc1419
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