BD 536 Search Results

BD NPN transistors

Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
Contextual Info: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

bd 825 10

Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Contextual Info: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,

bd 241a transistor

Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
Contextual Info: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50

NT5TU32M16DG

Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
Contextual Info: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400

chn 537

Abstract: chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761
Contextual Info: \[]{},|,3/ =:761 =>.>2 <27.B 3GDRSPGQ X 9555V ^c_f_]nlc] mnl_hanb X Pbini cmif[ncih X Cocfn2ch mho\\_l Gcf_ Ni? F6889=6 X TRJBD BD ionjon X P[h_f giohn X ED il BD ]ihnlif DQD57556556>8; X Wcnb LFE ch^c][nil il hin 4292<.7 12=0<6;>6:9 Tb_ KHX26:5:GC i``_l 8287VED il >527=5VBD chjon ]ihnlif1qcnb

Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD536 - 60 V : BD538

TRANSISTOR 536

Abstract: 536 transistor BD538 TRANSISTOR BD538 BD536 BD534 BD533 BD535 BD537 IC-101 FAIRCHILD
Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit -4 5 V : BD536 - 60 V : BD538

BD533

Abstract: BD537 TRANSISTOR BD533 BD534 BD535 BD536 BD538 101b1 60V transistor npn 2a switching applications
Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD535 60 V : BD537

TRANSISTOR BD533

Abstract: BD533 BD534 BD535 BD536 BD537 BD538 60V transistor npn 2a 60V transistor npn 2a switching applications
Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD535 60 V : BD537

OHL02514

Contextual Info: BD Biosciences SJ, Confidential CO HISTORY 01 - CO # DATE 500000000950 - 03/12/12 - CHANGE CODES a CO CHANGE CODES OPERATIONAL SPECIFICATIONS: The operational characteristics of this device shall be in accordance with the applicable manufacturers published

BD370

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST 37 BD LTR DESCRIPTION RLSE -1 PER NPR 5361 WAS 95-5018-10-1 DATE DUN APVD 06-30-95 DB MM HOUSING: POLYESTER, BLACK.

Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC BD ALL RIGHTS RESERVED. DIST REVISIONS 77 LTR -16.31 [. 642] DATE RLSE -1 NPR 5366, WAS 95-7343-8-1 06 / 27/95 REV PER EC 0G40-226-98 17 JUN 98 DUN APVD PB RT

NT5TU32M16DG

Abstract: NT5TU32M16 Nanya NT5TU32M16DG RU 3C
Contextual Info: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

N2TU51216

Abstract: N2TU51280DE-BE
Contextual Info: N2TU51280DE / N2TU51216DG Preliminary 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C -AC -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

nt5tu32m16dg

Abstract: NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU64M8DE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD
Contextual Info: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

Contextual Info: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI -AC/ACI -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency 125

bd 909 e 910

Abstract: 907 pnp CD 910 BD905 BD906
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor bd 292

Abstract: cdil bd 140 BD240C
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor bd 292

Abstract: BD240C 20mH 1A power transistor bd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers

BD370

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. BD DIST 37 R EV IS IO N S P LTR A B DATE DWN APVD 06 /2 3/95 - - 04 MAR 96 BC MB MM MM DESCRIPTION RLSE -1 PER NPR 5364 WAS 95-5018-1 1 -1