BD 439 Search Results

BD NPN transistors

Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
Contextual Info: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

transistor d325

Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Contextual Info: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

power transistor mrc 438

Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Contextual Info: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase

bo434

Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Contextual Info: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages

BD441

Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439
Contextual Info: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power

BD 440 PNP transistors

Abstract: BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441
Contextual Info: BD 438 - BD 440 - BD 442 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: Features: • Hohe Spitzenleistung • Verlustleistung 36 W

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

se 130 n

Abstract: BD441 BD442 439-BD
Contextual Info: / Z T S C S -THOMSON BD 439-BD 440 ^ 7 # [M g^@[i^(0TO«ûS_ B D 441-B P 442 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD439 and BD441 are silicon epitaxial-base NPN power transistors In Jedec TO-126 plastic package, intended for use in power linear and swit­

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50

bd series

Abstract: BD-1205S4 BD-1212S4 BD-123R3S4 BD-2405S4 bd 317
Contextual Info: BD Series 2 to 6 Watt Isolated DC-DC Converter Single / Dual Output 1. Features : ! Wide 2：1 Input Range ! Low Ripple and Noise ! Input / Output Isolation 1.5K Vdc or 3.5K Vdc ! 100 % Burn-In ! Input π- Filter ! Custom Design Available 2. Absolute maximum ratings：

bd series

Abstract: BD-2405S4 BD 104 bd 125 equivalent BD-1205S4 BD-1205S5 BD-1212S4 BD-1215S5 BD-123R3S4 BD-2405S5
Contextual Info: BD 4 to 6 Watt Isolated DC-DC Converte r Series Single / Dual Output 1. Features : n Wide 2:1 Input Range n Low Ripple and Noise n Input / Output Isolation 1.5K Vdc or 3.5K Vdc n 100 % Burn-In n Input p - Filter n Custom Design Available 2. Absolute maximum ratings:

Contextual Info: BD Series 2 to 6 Watt Isolated DC-DC Converter Single / Dual Output 1. Features : n Wide 2：1 Input Range n Low Ripple and Noise n Input / Output Isolation 1.5K Vdc or 3.5K Vdc n 100 % Burn-In n Input π- Filter n Custom Design Available 2. Absolute maximum ratings：

Contextual Info: BD LF - Series 2 To 6 Watt Isolated DC-DC Converter Single / Dual Output 1 . Features l Wide 2 : 1 Input Range l Low Ripple And Noise l Input / Output Isolation 1.5K Vdc Or 3K Vdc l 100% Burn-In l Input π - Filter l Custom Design Available l Net Weight : 12 g / 17 g

Contextual Info: BD LF - Series 2 To 6 Watt Isolated DC-DC Converter Single / Dual Output 1 . Features l Wide 2 : 1 Input Range l Low Ripple And Noise l Input / Output Isolation 1.5K Vdc Or 3K Vdc l 100% Burn-In l Input π - Filter l Custom Design Available l Net Weight : 12 g / 17 g

BD 104

Abstract: bd series 10 watt power transistor bd LF 357 equivalent transistor BD 110 BD-1205S4 BD-1212S4 BD-123R3S4 BD-2405S4 BD123
Contextual Info: BD LF - Series 2 to 6 Watt Isolated DC-DC Converter Single / Dual Output 1 . Features λ Wide 2 : 1 Input Range λ Low Ripple and Noise λ Input / Output Isolation 1.5K Vdc or 3.5K Vdc λ 100% Burn-In λ Input p - Filter λ Custom Design A vailable λ Net Weight : 12 g / 17 g

Contextual Info: 4 DRAWING MADE THIS IN THIRD ANGLE PROJECTION DRAWING IS UNPUBLISHED R E L E A S E D FOR P U B L I C A T I O N COPYRIGHT 19 BY AMP INCORPORATED. ALL MOD ,19 LOC 1 INTERNATIONAL RIGHT5 RESERVED. -2.54 [. 10 0 ] DIST BD 37 REVISIONS P F ZONE LTR TYP DESCRIPTION

Contextual Info: 7 DRAWING MADE 6 5 4 3 2 1 IN THIRD ANGLE PR O JEC TIO N THIS DRAWING IS UNPUBLISHED COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL MOD ,19 INTERNATIO NAL RIG H T5 LOC 1 RESERVED. D IS T BD REVISIONS 37 p F ZONE LTR D ES C R IPTIO N DATE

A109

Abstract: B633 HDP-20 MIL-T-10727 ASTM B633 type II finish
Contextual Info: DRAWING THIS MADE DRAWING IN 4 THIRD ANGLE IS UNPUBLISHED. COPYRIGHT PROJECTION 19 RELEASED FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. ALL #4-40 D IS T BD IN TERNATIO NAL RIGHTS RESERVED. EXPANDING NECK ACCOMMODATES CABLE FROM . 3 3 8 - . 5 6 2 DI A

BD NPN transistors 177

Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42
Contextual Info: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15