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    D201 Search Results

    D201 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD2015FN
    		Toshiba Electronic Devices & Storage Corporation Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 Datasheet
    TPD2017FN
    		Toshiba Electronic Devices & Storage Corporation Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 Datasheet
    G874D201202CEU
    		Amphenol Communications Solutions Mini power, Vertical, Dual row, 4.2mm pitch, 20 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , TRAY PDF
    SN65MLVD201D
    		Texas Instruments Half-Duplex M-LVDS Transceiver 8-SOIC -40 to 85 Visit Texas Instruments Buy
    SN65MLVD201DG4
    		Texas Instruments Half-Duplex M-LVDS Transceiver 8-SOIC -40 to 85 Visit Texas Instruments Buy

    D201 Datasheets (66)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    D201
    		Unknown Single & Dual Output Miniature, 2W SIP DC/DC Converters Original PDF 90.5KB 2
    D 20 10
    		Gedore Torque SOCKET 1/4"" 10 MM Original PDF 6.54MB
    D2010
    		Pixim Pixim D2000 Video Imaging System for Advanced CCTV Cameras Original PDF 135.59KB 2
    D2010
    		Semelab METAL GATE RF SILICON FET Original PDF 15.11KB 2
    D2010
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 134.72KB 1
    D2010
    		Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF 61.19KB 1
    D2010UK
    		Semelab Metal Gate RF Silicon FET Original PDF 15.11KB 2
    D2010UK
    		Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 1GHz SINGLE ENDED Original PDF 20.56KB 2
    D 20 11
    		Gedore Torque SOCKET 1/4"" 11 MM Original PDF 6.54MB
    D2011
    		Semelab METAL GATE RF SILICON FET Original PDF 20.02KB 2
    D 20 11/32AF
    		Gedore Torque SOCKET 1/4"" 11/32"" Original PDF 6.54MB
    D2011UK
    		Semelab METAL GATE RF SILICON FET Original PDF 20.72KB 2
    D 20 12
    		Gedore Torque SOCKET 1/4"" 12 MM Original PDF 6.54MB
    D2012
    		Unknown Si NPN TRANSISTOR Original PDF 14.58KB 1
    D 20 1/2AF
    		Gedore Torque SOCKET 1/4"" 1/2"" Original PDF 6.54MB
    D2012UK
    		Semelab Metal Gate RF Silicon FET Original PDF 53.86KB 4
    D2012UK
    		Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED Original PDF 60.31KB 4
    D2012UK
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 76.63KB 1
    D 20 13
    		Gedore Torque SOCKET 1/4"" 13 MM Original PDF 6.54MB
    D2013
    		Semelab METAL GATE RF SILICON FET Original PDF 59.35KB 4
    SF Impression Pixel

    D201 Price and Stock

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    Carling Technologies RAD201-RB-B-0-N

    R-SERIES ROCKER SWITCH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics RAD201-RB-B-0-N
    • 1 -
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    • 100 $2.65
    • 1000 $1.90
    • 10000 $1.76
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    Sager RAD201-RB-B-0-N 1
    • 1 $3.26
    • 10 $3.26
    • 100 $2.98
    • 1000 $1.82
    • 10000 $1.77
    		Buy Now

    Thomas & Betts PID2016

    Hinged Internal Door - HP2016B Enclosure - Material Fiberglass Reinforced Polyester - Shape Rectangular - Size 20 Inch x 16 Inch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics PID2016
    • 1 $524.93
    • 10 $502.89
    • 100 $502.89
    • 1000 $502.89
    • 10000 $502.89
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    IDEC Corporation ABD201N-BGR

    Switch Push Button N.C. SPST Extended Round Button 10A 440VAC 220VDC Momentary Contact Screw Panel Mount
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics ABD201N-BGR
    • 1 -
    • 10 $16.31
    • 100 $13.95
    • 1000 $13.59
    • 10000 $13.59
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    Sager ABD201N-BGR
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    Samtec Inc AW-05-03-G-D-201-100

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics AW-05-03-G-D-201-100
    • 1 -
    • 10 $3.19
    • 100 $2.68
    • 1000 $1.73
    • 10000 $1.16
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    Panasonic Electronic Components AXF6D2012A

    A35UH(0.35mm pi
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics AXF6D2012A
    • 1 -
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    • 100 -
    • 1000 $1.39
    • 10000 $1.27
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    Avnet Americas AXF6D2012A Tape & Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.31
    • 10000 $1.21
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    Sager AXF6D2012A 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.35
    • 10000 $1.29
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    Find more D201 price and stock on Findchips.com

    D201 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D2010

    Abstract: D2010UK
    Contextual Info: TetraFET D2010UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		d2010ukd2010 PDF

    9507 marking

    Abstract: D2012 transistor d2012
    Contextual Info: SAW Bandpass Filter 203651B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203651bd201204a001nm3017-cs02+29507 markingtransistor d2012 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		241904bd201206a001nm6002-cs01 PDF

    D2012

    Abstract: 88621
    Contextual Info: SAW Bandpass Filter 202174C 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1


    Original     		202174cd201205a001nm5014-cs02+188621 PDF

    D2012

    Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
    Contextual Info: SAW Bandpass Filter 242002B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		242002bd201208a001nm8047-cs01+3transistor d2012t d2012transistor d2012 t d2012 d2012 PDF

    25160

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 251601B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		251601bd201204a001nm3032-cs03+125160 PDF

    10840

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 252602B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		252602bd201206a001nm6019-cs01+110840 PDF

    NM4002-CS01

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 270802B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		270802bd201204a001nm4002-cs01 PDF

    D2012

    Abstract: 11515DB
    Contextual Info: SAW Bandpass Filter 203629B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203629bd201204a001203swr+2ni2029-cs0311515db PDF

    D2012

    Contextual Info: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		253004bd201206a001nm6028-cs01 PDF

    20PF

    Abstract: D2012 252101
    Contextual Info: SAW Bandpass Filter 252101B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		252101bd201206a001nm6018-cs01+220pf252101 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		201096bd201204a001ni0033-cs04 PDF

    09310

    Abstract: 7686 D2012
    Contextual Info: SAW Bandpass Filter 203608B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203608bd201204a001ds4018-cs02+2093107686 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		253010bd201209a001center125+1nm9023-cs01 PDF

    98-0745

    Abstract: D2012 52562
    Contextual Info: SAW Bandpass Filter 261903B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		261903bd201205a001261h2+3nm5023-cs0298-074552562 PDF

    D2012

    Abstract: 593790
    Contextual Info: SAW Bandpass Filter 233004B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Dimensions shown are nominal in millimeters


    Original     		233004bd201208a001nm8004-cs01+1593790 PDF

    transistor d2012

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 242003B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		242003bd201206a001nm6015-cs01+1transistor d2012 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		221904bd201207a001nm7037-cs01 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		250506bd201206a001center140+1nw6001-cs01 PDF

    D2015

    Contextual Info: TetraFET D2015UK METAL GATE RF SILICON FET MECHANICAL DATA O A B C K H I E J F L G 4 PLS N D M (2 PLS) PIN 1 SOURCE PIN 2 SOURCE PIN 3 GATE PIN 4 DRAIN PIN 5 SOURCE PIN 6 SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13


    Original     		d2015uk500mhzd2015 PDF

    transistor D2012

    Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		d2012uk450mwtransistor d2012 PDF

    transistor d2012

    Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
    Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		d2012transistor--d2012transistor d2012d2012 transistor+2transistor-d2012transistor equivalent d2012 PDF

    D2011UK

    Contextual Info: TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 3 6 F A 5 4 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source PIN 2 Drain PIN 6 Gate


    Original     		d2011uk PDF

    d2015l

    Contextual Info: Part: D2015L Series: Teccor Silicon Rectifier Devices Technology:Rectifiers PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole RMS forward current I F RMS MAX (A) 15 Average Forward Current I F (av) MAX (A) 9.5000 Peak Reverse Current


    Original     		d2015lo-220 PDF