D201 Search Results

D201 Result Highlights (5)

Part	Manufacturer	Description	Download
TPD2015FN	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30	Datasheet
TPD2017FN	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30	Datasheet
G874D201202CEU	Amphenol Communications Solutions	Mini power, Vertical, Dual row, 4.2mm pitch, 20 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , TRAY	PDF
SN65MLVD201DG4	Texas Instruments	Half-Duplex M-LVDS Transceiver 8-SOIC -40 to 85
SN65MLVD201DR	Texas Instruments	Half-Duplex M-LVDS Transceiver 8-SOIC -40 to 85

D201 Datasheets (72)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
D201	Unknown	Single & Dual Output Miniature, 2W SIP DC/DC Converters	Original	PDF	90.5KB	2
D 20 10	Gedore Torque	SOCKET 1/4"" 10 MM	Original	PDF	6.54MB
D2010	Pixim	Pixim D2000 Video Imaging System for Advanced CCTV Cameras	Original	PDF	135.59KB	2
D2010	Semelab	METAL GATE RF SILICON FET	Original	PDF	15.11KB	2
D2010	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	134.72KB	1
D2010	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF	61.19KB	1
D2010UK	Semelab	Metal Gate RF Silicon FET	Original	PDF	15.11KB	2
D2010UK	Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 1GHz SINGLE ENDED	Original	PDF	20.56KB	2
D 20 11	Gedore Torque	SOCKET 1/4"" 11 MM	Original	PDF	6.54MB
D2011	Semelab	METAL GATE RF SILICON FET	Original	PDF	20.02KB	2
D 20 11/32AF	Gedore Torque	SOCKET 1/4"" 11/32""	Original	PDF	6.54MB
D2011UK	Semelab	METAL GATE RF SILICON FET	Original	PDF	20.72KB	2
D 20 12	Gedore Torque	SOCKET 1/4"" 12 MM	Original	PDF	6.54MB
D2012	Unknown	Si NPN TRANSISTOR	Original	PDF	14.58KB	1

D 20 1/2AF	Gedore Torque	SOCKET 1/4"" 1/2""	Original	PDF	6.54MB
D2012UK	Semelab	Metal Gate RF Silicon FET	Original	PDF	53.86KB	4
D2012UK	Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED	Original	PDF	60.31KB	4
D2012UK	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	76.63KB	1
D 20 13	Gedore Torque	SOCKET 1/4"" 13 MM	Original	PDF	6.54MB
D2013	Semelab	METAL GATE RF SILICON FET	Original	PDF	59.35KB	4

D201 Price and Stock

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Walsin Technology Corporation WLBD2012HCU221TH FERRITE BEAD 220 OHM 0805 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	WLBD2012HCU221TH	Cut Tape	19,500		1	1 $0.10 10 $0.02 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
	WLBD2012HCU221TH	Digi-Reel	19,500		1	1 $0.10 10 $0.02 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
	WLBD2012HCU221TH	Reel	16,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Walsin Technology Corporation WLBD2012HCU601TH FERRITE BEAD 600 OHM 0805 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	WLBD2012HCU601TH	Digi-Reel	17,569		1	1 $0.10 10 $0.02 100 $0.02 1000 $0.01 10000 $0.01	Buy Now
	WLBD2012HCU601TH	Cut Tape	17,569		1	1 $0.10 10 $0.02 100 $0.02 1000 $0.01 10000 $0.01	Buy Now
	WLBD2012HCU601TH	Reel	16,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Taiwan Semiconductor MBRAD20100H 20A, 100V, SCHOTTKY RECTIFIER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MBRAD20100H	Cut Tape	2,447		1	1 $0.98 10 $0.79 100 $0.65 1000 $0.46 10000 $0.44	Buy Now
	MBRAD20100H	Digi-Reel	2,447		1	1 $0.98 10 $0.79 100 $0.65 1000 $0.46 10000 $0.44	Buy Now
Avnet Americas	MBRAD20100H	Reel		12 Weeks	4,500	1 - 10 - 100 - 1000 - 10000 $0.39	Buy Now
Avnet Asia	MBRAD20100H			12 Weeks	4,500	1 - 10 - 100 - 1000 - 10000 $0.38	Buy Now
EBV Elektronik	MBRAD20100H			14 Weeks	4,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components SD2010S040S2R0 DIODE SCHOTTKY 40V 2A 2010
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SD2010S040S2R0	Digi-Reel	1,277		1	1 $0.52 10 $0.28 100 $0.24 1000 $0.16 10000 $0.16	Buy Now
	SD2010S040S2R0	Cut Tape	1,277		1	1 $0.52 10 $0.28 100 $0.24 1000 $0.16 10000 $0.16	Buy Now
Newark	SD2010S040S2R0	Cut Tape	2,715		1	1 $0.04 10 $0.04 100 $0.04 1000 $0.04 10000 $0.04	Buy Now
Avnet Abacus	SD2010S040S2R0			20 Weeks	30,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
YAGEO Corporation SMD2016B100TF-33 PTC RESET FUSE 33V 1.1A 2016
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SMD2016B100TF-33	Cut Tape	760		1	1 $0.34 10 $0.26 100 $0.20 1000 $0.16 10000 $0.16	Buy Now
	SMD2016B100TF-33	Digi-Reel	760		1	1 $0.34 10 $0.26 100 $0.20 1000 $0.16 10000 $0.16	Buy Now

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D201 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D2010 Abstract: D2010UK Contextual Info: TetraFET D2010UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D2010UK D2010 D2010UK	PDF
9507 marking Abstract: D2012 transistor d2012 Contextual Info: SAW Bandpass Filter 203651B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration	Original	203651B D2012 04A001 NM3017-CS02 9507 marking D2012 transistor d2012	PDF
D2012 Contextual Info: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2	Original	241904B D2012 06A001 NM6002-CS01 D2012	PDF
D2012 Abstract: 88621 Contextual Info: SAW Bandpass Filter 202174C 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1	Original	202174C D2012 05A001 NM5014-CS02 D2012 88621	PDF
D2012 Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012 Contextual Info: SAW Bandpass Filter 242002B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters	Original	242002B D2012 08A001 NM8047-CS01 D2012 transistor d2012 T D2012 transistor d2012 T D2012 D2012	PDF
25160 Abstract: D2012 Contextual Info: SAW Bandpass Filter 251601B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration	Original	251601B D2012 04A001 NM3032-CS03 25160 D2012	PDF
10840 Abstract: D2012 Contextual Info: SAW Bandpass Filter 252602B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters	Original	252602B D2012 06A001 NM6019-CS01 10840 D2012	PDF
NM4002-CS01 Abstract: D2012 Contextual Info: SAW Bandpass Filter 270802B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration	Original	270802B D2012 04A001 NM4002-CS01 NM4002-CS01 D2012	PDF
D2012 Abstract: 11515DB Contextual Info: SAW Bandpass Filter 203629B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration	Original	203629B D2012 04A001 203SWR NI2029-CS03 D2012 11515DB	PDF
D2012 Contextual Info: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration	Original	253004B D2012 06A001 NM6028-CS01 D2012	PDF
20PF Abstract: D2012 252101 Contextual Info: SAW Bandpass Filter 252101B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters	Original	252101B D2012 06A001 NM6018-CS01 20PF D2012 252101	PDF
D2012 Contextual Info: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration	Original	201096B D2012 04A001 NI0033-CS04 D2012	PDF
09310 Abstract: 7686 D2012 Contextual Info: SAW Bandpass Filter 203608B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration	Original	203608B D2012 04A001 DS4018-CS02 09310 7686 D2012	PDF
D2012 Contextual Info: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated	Original	253010B D2012 09A001 CENTER125. NM9023-CS01 D2012	PDF

98-0745 Abstract: D2012 52562 Contextual Info: SAW Bandpass Filter 261903B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration	Original	261903B D2012 05A001 261H2 NM5023-CS02 98-0745 D2012 52562	PDF
D2012 Abstract: 593790 Contextual Info: SAW Bandpass Filter 233004B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Dimensions shown are nominal in millimeters	Original	233004B D2012 08A001 NM8004-CS01 D2012 593790	PDF
transistor d2012 Abstract: D2012 Contextual Info: SAW Bandpass Filter 242003B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2	Original	242003B D2012 06A001 NM6015-CS01 transistor d2012 D2012	PDF
D2012 Contextual Info: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated	Original	221904B D2012 07A001 NM7037-CS01 D2012	PDF
D2012 Contextual Info: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2	Original	250506B D2012 06A001 CENTER140. NW6001-CS01 D2012	PDF
D2015 Contextual Info: TetraFET D2015UK METAL GATE RF SILICON FET MECHANICAL DATA O A B C K H I E J F L G 4 PLS N D M (2 PLS) PIN 1 SOURCE PIN 2 SOURCE PIN 3 GATE PIN 4 DRAIN PIN 5 SOURCE PIN 6 SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13	Original	D2015UK 500MHz D2015	PDF
transistor D2012 Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D2012UK 450mW transistor D2012	PDF
transistor d2012 Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012 Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 60V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012	PDF
D2011UK Contextual Info: TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 3 6 F A 5 4 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source PIN 2 Drain PIN 6 Gate	Original	D2011UK D2011UK	PDF
d2015l Contextual Info: Part: D2015L Series: Teccor Silicon Rectifier Devices Technology:Rectifiers PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole RMS forward current I F RMS MAX (A) 15 Average Forward Current I F (av) MAX (A) 9.5000 Peak Reverse Current	Original	D2015L O-220	PDF

D201 Search Results

D201 Result Highlights (5)

D201 Datasheets (72)

D201 Price and Stock

Walsin Technology Corporation WLBD2012HCU221TH

Walsin Technology Corporation WLBD2012HCU601TH

Taiwan Semiconductor MBRAD20100H

Kyocera AVX Components SD2010S040S2R0

YAGEO Corporation SMD2016B100TF-33

D201 Datasheets Context Search

D2010

9507 marking

D2012

D2012

D2012

25160

10840

NM4002-CS01

D2012

D2012

20PF

D2012

09310

D2012

98-0745

D2012

transistor d2012

D2012

D2012

D2015

transistor D2012

transistor d2012

D2011UK

d2015l