BD 250C Search Results

BDX 241

Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

transistor bd 202

Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
Contextual Info: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

BD618

Abstract: BD 202 transistors
Contextual Info: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically

241A

Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
Contextual Info: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

bd5460

Abstract: B0243 BD250 B0245A B0246 B0544 BD239 BD245C BD545B BD239A
Contextual Info: T e x a s In s t r u m e n t s 2-6A Up to 65W T O -6 6 Plastic Packages Characteristics Tcase = 2 5 'C M a x Ratings at Tease = 2 b - C >» Device Type BD239 BD 239A BD239B BD 239C BD240 B0240A BD 240B BD 240C B D 24 1 BD 241A BD241B BD 241C BD242 BD 242A

BA 204-115

Abstract: BA 204115 B80C bf 204 115 110BHZ B20C 500 B80C 300 b80c 400 B250C1500B B80C-3200/2200
Contextual Info: o single phase moulded bridges ponts monophasés moulés THOMSON-CSF VRRM Type* Vrms recom­ mended V 1#5 A B 40C B80C B 125C B2 5 0 C B 380C / BY BA BB BD BF BH / B20C B40C B80C B 125C B 250C B 380C (A) 1,6 tam b = 70 °C * * 25 50 80 150 250 380 Ir per diode

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Gain Block September 2005 - Rev 27-Sep-05 CMM1100-BD Absolute Maximum Ratings 2 Features Fully matched Single Supply Voltage (+5V) Easy assembly High gain: 17.5dB typical Low noise figure: 3.3dB typical at 6GHz Small chip size: 1.60 x 1.55 x 0.076

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

SCP-4979

Contextual Info: SENSITRON SEMICONDUCTOR SCP-4979 TECHNICAL DATA DATASHEET 1137, REV.D HV IGBT Solid-State Switch Data Sheet DESCRIPTION: 12000 VOLT, 1.0 AMP, INDUSTRIAL IGBT Solid-state Switch AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL

igbt 12V base

Abstract: SCP-4979
Contextual Info: tSENSITRON SCP-4979 SEMICONDUCTOR TECHNICAL DATA DATA SHEET, 1137, REV. ENG. B HV IGBT Solid-State Switch DESCRIPTION: A 12000 VOLT, 1.0 AMP, INDUSTRIAL IGBT Solid-state Switch AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL

1137 GE

Contextual Info: SENSITRON SEMICONDUCTOR SCP-4979 TECHNICAL DATA DATASHEET 1137, REV. C HV IGBT Solid-State Switch Data Sheet DESCRIPTION: 12000 VOLT, 1.0 AMP, INDUSTRIAL IGBT Solid-state Switch AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL

SCP-4979

Contextual Info: SENSITRON SEMICONDUCTOR SCP-4979 TECHNICAL DATA DATASHEET 1137, REV.D HV IGBT Solid-State Switch Data Sheet DESCRIPTION: 12000 VOLT, 1.0 AMP, INDUSTRIAL IGBT Solid-state Switch AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

bd207

Abstract: bd 250c bd205
Contextual Info: SC motorola €367254 CXSTRS/R M OT O RO L A DE | b 3 b 7 E 5 4 FÏ 96D S Ç Î X S T R S / R F 80567 MOTOROLA E 3 TECHNICAL DATA P L A S T IC HIGH PO W ER S ILIC O N NPN TR A N S IS TO R . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

C6020

Contextual Info: M0!?5FDECJ0*E2?52C50CO0I0CO0@@EAC:?E M0*:I0*:5650*9:6=5:?8 M086?4J0AAC@G65 M0BC60CE02?50E-0!?AFED M0EB0.:560 2?860!?AFE0%@56=D );0%4.)60 )+0)16503033/-'%6-215 +6=64@> 2E24@> @:?E0@70$@25 (/0*6C:6D *:?8=660F2=60+C:A=60'FEAFE0EA.020A.0 70@?G6CE6CD

bb36931

Abstract: bb 36 931 BB36-931 BD37931 BA36931 ba 37 931 bb37931 BH 37 931 BA37931 BA 204115
Contextual Info: PONTS MONOPHASES MOULES , moulded single phase bridges^ Vr = correspondances européennes v eff >d recomman­ surcharge résistive dée VrrM TYPES VI 0,6 A 110 110 110 110 110 110 à t connexions = 50°C A05 A 1 A 2 A 4 A 6 A 8 1,5 A 110 110 110 110 110 110

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

rx3e

Abstract: 131KHz 30SEG sh6603 DPM 24 40000 305h 68 036B6 CX 8248
Contextual Info: SH6603 Mask 4-Bit Microcontroller with LCD Driver PRELIMINARY Features ! SH6610C-based single-chip 4-bit microcontroller with LCD driver ! ROM: 2048 X 16 bits ! RAM: 128 X 4 bits data memory ! Operation Voltage Range: 2.2V - 3.6V (typical 3.0V) ! 12 CMOS bi-directional I/O pins

ptc 270 ohm

Abstract: PTFD04BF471Q2N34B0 PTH7M C40BH PTDCA1BF9R0Q200 PTHGA4AR470N500-00 PTH7M4R7MC1-00 PTDCA1BF180N200
Contextual Info: Resistors/Thermistors PTC POSISTOR for Overheat Sensing Lead Type a PTFL Series PTFM Series Curie Point (°C) Sensing Temp.fTS) (V) (°C) Resistance Value at 25°C (ohm) Resistance Value (Sensing Temp. -10°C) at Sensing Temp.(TS0C) 16 40 (BH) 60 100 max.

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

bussmann Fuse 450 amps 250 volts max zs

Abstract: HRC fuse gg bussmann hrc fuse zs BUSSMANN 50 Nz02 HRC Fuse HOLDER HRC fuse 250A max zs for nh fuses CGL-400 16D27 SB00-D
Contextual Info: IEC & British Standard Fuses IEC and British Standard Fuses Section Contents Application Data Page Application Data . . . . . . . . . . . . . . . . . . . . . 217-218 HRC fuse holders CAMaster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .235