623SB Search Results

Contextual Info: 623Sb05 D04b572 ETO « S I E G bOE ]> I 7 = - # “0 5 SFH 482201 SIEMENS GaAIAs-LASER DIODE 250 mW SIEMENS AKTIEN6ESELLSCHAF P ackage Dimensions in mm 5.9 11.7 - Laser Mirror , 1 .0 -2 .0 7.0 1. 2. 3. 4. Peltier-Cooler+ NTC NTC Laserdiode Cathode 5. Laserdiode Anode

Bd 130 NPN transistor

Abstract: 62702-D394 transistor z5
Contextual Info: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

9060

Contextual Info: SIEMENS AKTIENGESELLS CHA F -p-^| | H7E D • 623SbD5 0DS7^Db T H S A 9060 Features: • epoxy-encapsulated housing • small dimensions Application: • indicator control in pocket cameras • light intensity control of radio clocks • exposure meters • contrast control of

POWER SUPPLY BTS SIEMENS

Abstract: Zener diode smd marking code 621 gl2 113 SMD MARKING CODE 09t 1G33 Q67007-A9274
Contextual Info: • SIEMENS 623SbÜS D lQ 3 37b b b 1! . . T rilith IC B T S 771 Target Data Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications

BD618

Abstract: BD 202 transistors
Contextual Info: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically

Siemens PEB 2040

Abstract: Siemens PEB 2045 TS127 08 PLCC-40 CDIP40 D55A PEB2045 P 30B4 PL-CC-44 tsco4
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D • S IE M E N S 623SbDS 0035^31 5 ■ ISIEG -T -7 5 -//' Memory Time Switch CMOS MTSC Preliminary Data PEB 2045 PEF 2045 CMOS 1C Type Ordering Code Package PEB 2045 P PEB 2045 C PEB 2045 N PEF 2045 P PEF 2045 C PEF 2046 N

10125N

Contextual Info: büE ] • 623SbüS GD4bSbO SfiT ■ S I E G SIEMENS ^^ -0 7 SFH 4423/4424 LOW POWER LASERDIODE SIEMENS AKTIENGESELLSCHAF • ' ^ ^ IBER Prelim inary Data Sheet Package Dimensions in mm 10.7 S F H 4 42 3 10 .3 2.3 12 Min. 2.0 16.2 15.8 GD MD 0.55 0.4 tu - è

Contextual Info: 2SC D • 623SbG5 0 0 0 4 0 ^ 1 « S IE G PNP Silicon Planar Transistors 2 N 2906 2 N 2907 SIEMENS AKTIENGESELLSCHAF 2 N 2906 and 2 N 2907 are epitaxial PNP silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are particularly

LG 3160

Contextual Info: SIEMENS AKTIENGESELLSC HAF SIEM EN S 47E D • 623Sb05 0GE713Ô 2 «SIElS TMKzi LS 3180 YELLOW LY 3180 GREEN LG 3180 suPÈR-RÈD T1 3 mm WIDE ANGLE LED LAMP Maximum Ratings FEATURES * Colors: Super-Red, Yellow, Green * Lens: Red Diffused, Yellow Diffused,

OLB2350

Abstract: GLB2550 QLB2350 YLB2450
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • 623SbGS 00271G5 T « S I E G S IE M E N S OLB 2350 YELLOW YLB 2450 GREEN GLB 2550 SUPER-RED LIGHT BARS Package Dimensions in Inches mm I I- : ISO 1190U| Indians P in i PIN F U N C T IO N 1 O ath od e-a 2 Anode — a 3

C67078-A1611-A2

Abstract: KDS 4K
Contextual Info: ÔÔD D • 623SbQS 001457b S BISIEi^ 88D 14576 D BUZ 38 _ SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage /os = 200 V /„ =18A Continuous drain current Draln-source on-resistance ^DS on = 0,12 SI Description SIPMOS, N-channel, enhancement mode

Contextual Info: SIEMENS AKTIENGESEL LSCHAF 47E D • 623SbGS 00271G5 T « S I E G S IE M E N S OLB 2350 YELLOW YLB 2450 GREEN GLB 2550 SUPER-RED LIGHT BARS Package Dimensions in Inches mm I 1 L _ H wo _ 1203201 I t 0810) t 020 J Part «tenWioWi ✓ tootion ^ /

2907

Abstract: 2N2906 a 2907 Q62702-F137
Contextual Info: 2SC D • 623SbG5 0 0 0 4 0 ^ 1 « S IE G PNP Silicon Planar Transistors 2 N 2906 2 N 2907 SIEMENS AKTIENGESELLSCHAF 2 N 2 9 0 6 and 2 N 2 9 0 7 are epitaxial PNP silicon planar transistors in TO 1 8 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistors are particularly

BD 130 NPN transistor

Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
Contextual Info: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

Q67006-A9171

Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
Contextual Info: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible

doz 112

Abstract: V2000G 235L
Contextual Info: SIEM EN S 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Prelim inary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation

Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

BUZ54

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 54 • N channel • Enhancement mode • Avalanche-rated VOTOSI 52 Type v DS ^DS on Package 1> Ordering Code BUZ 54 1000 V 5.1 A 2.0 £2 TO-204 AA C67078-S1010-A2 BUZ 54 A 1000 V 4.5 A 2.6 Q TO-204 AA C67078-S1010-A3

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BP 104 BP 104 FS sp acing -R a d ia n t sensitive area C athode A pp ro x. w e ig ht 0.1 g C hip p osition P hotosensitive Area = 2 .2 0 m m x 2 .2 0 m m

tba 120 ub

Abstract: tba120 TBA120 WITH TBA 850
Contextual Info: 47E D B23SbOS DD3404Ö SIEMENS 3 «SIE6 S I E M EN S A K T I E N G E S E L L S C H A F FM IF Amplifier with Demodulator TBA 120 Bipolar IC Features • • • • • • Outstanding limiting qualities Few external components Terminal for video recorder AF output voltage independent of supply voltage

Siemens MTD 95 A 08 N

Contextual Info: SIEM ENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 w ords by 1-bit organization • 0 to 70 “C operating tem perature • Fast access time RAS access time:

Contextual Info: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12

Contextual Info: SIEMENS 6fach-Silizium-Fotodiodenarray 6-Chip Silicon Photodiode Array KOM 2033 A KOM 2033 AF Maße in mm, w enn nicht anders a ngegeben/D im ensions in mm. unless otherw ise specified W esentliche M erkm ale Features • Speziell geeignet für Anwendungen im

Contextual Info: SIEM EN S SAB-C501 8-Bit C M O S M icroco n tro ller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2