BD 149 TRANSISTOR Search Results

BD 149 transistor

Abstract: bd 317 BD315 bd318 transistor D317 BD317
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | fc.3b?2S4 0004735 1 | 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON HIGH-POWER TRANSISTORS 16 AMPERES SILICON POWER TRANSISTORS . . . d e sig n ed for hig h qu ality am p lifie rs operating up to 100 W atts into 4.0 o h m s load w ith BD315, BD 316 an d into 8.0 o h m s lo ad w ith

Contextual Info: 7 ^ 2 3 7 Q02Ô3TS ^ mT-3>3>'0°\ S G S -T H O M S O N M Ê B O iU lie ïlM iis S S G S- TH OM SON B D 2 3 3 /5 /7 B D 2 3 4 /6 /8 3GE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD233, BD235 and BD237 are silicon epitaxialbase NPN power transistors in Jedec TO-126

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

AX5621

Contextual Info: 19-2715; Rev 2; 1/06 16-Bit DACs with 16-Channel Sample-and-Hold Outputs Ordering Information PART PIN-PACKAGE 64 TQFP MAX5621UTK 68 Thin QFN-EP* MAX5622UCB 64 TQFP MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation

2sd155

Abstract: SN232 BLY92 2SD154 BD109 BLY88 TIP27 MD17A X51c stc1201
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors kI B H H LINE No. TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

KVL01

Contextual Info: MC100LVEL01 3.3V ECL 4−Input OR/NOR The MC100LVEL01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in

E140173

Abstract: SERVO MOTOR 50 PIN CONNECTOR analog servo PIC16F877A circuit diagram Advanced Motion Controls ac servo drive ac motor servo control circuit diagram transistor servo drive dc servo motor encoder ADVANCED MOTION CONTROLS PWM
Contextual Info: Analog Servo Drive Description BD15A8 Power Range The BD15A8 PWM servo drive is designed to drive brushless DC motors at a high switching frequency. It is fully protected against over-voltage, over-current, over-heating and short-circuits. The drive interfaces

QFN-68

Abstract: LQFP-64 footprint 21-0142E AX5631 MAX5633UTK T MAX5632UCB D t6800
Contextual Info: 19-2171; Rev 3; 1/05 16-Bit DACs with 32-Channel Sample-and-Hold Outputs Ordering Information PART TEMP RANGE* MAX5631UCB 0°C to +85°C 64 TQFP MAX5631UTK 0°C to +85°C 68 Thin QFN MAX5632UCB 0°C to +85°C 64 TQFP MAX5632UTK 0°C to +85°C 68 Thin QFN MAX5633UCB

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

VEB mikroelektronik

Abstract: mikroelektronik DDR mikroelektronik RFT elektronik DDR DDR Schaltkreise bauelemente DDR elektronische bauelemente rft Transistoren DDR service-mitteilungen RFT Service Mitteilung
Contextual Info: RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Ausgabe ¡^M\radio-te/evision\ Ckt. 1988 f VEB 00 SERVICE-MITTEILUNGEN Seite 1-9 Mitteilung aus dem VEB RFT IV RuF Leipzig/Servicevorbereitung Effektive Eroduktionstechnologie in der KonBumguterelektronik - kontra Heparaturtechnologie ?

0x01FFFFFF

Abstract: transistor BD 522 08FF ARM7500
Contextual Info: 1 14 11 Memory Subsystems 14.1 ROM interface 14-2 14.2 DRAM interface 14-7 14.3 DMA channels 14-16 ARM7500 Data Sheet ARM DDI 0050C Preliminary - Unrestricted This chapter describes the ROM and DRAM interfaces, and the DMA channels. 14-1 Memory Subsystems

LQFP-64 footprint

Contextual Info: 19-3563; Rev 1; 5/05 12-Bit DACs with 32-Channel Sample-and-Hold Outputs _Applications MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation Ordering Information PART TEMP RANGE PIN-PACKAGE MAX5331UCB

motorola 1N4148

Abstract: DSP56301 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO
Contextual Info: DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP56301ADMUM/AD Introduction This document supports the DSP56301 Application Development Module

Keithley s900

Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
Contextual Info: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

transistor 2SC114

Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C

ARM7500FE

Abstract: 08FF 0x032000F8
Contextual Info: 1 18 11 I/O Subsystems This chapter describes the ARM7500FE I/O subsystems. 18.1 Introduction 18-2 18.2 I/O Address Space Usage 18-3 18.3 Additional I/O Chip Select Decode Logic 18-4 18.4 Simple 8MHz I/O 18-4 18.5 Module I/O 18-11 18.6 PC Bus-style I/O 18-15

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

BCM5718

Abstract: BCM54880 BCM5488 BCM5715 5718-PG100-R D203B switch SGMII MII GMII NetXtreme cq422 bcm5714
Contextual Info: Programmer’s Guide BCM5718 NetXtreme /NetLink BCM5718 Family Programmer’s Guide 5718-PG100-R 5300 California Avenue • Irvine, CA 92617 • Phone: 949-926-5000 • Fax: 949-926-5203 April 13, 2010 Revision History Revision Date Change Description

Contextual Info: C O S /M O S INTEGRATED CIRCUIT ^ 0j, * ^ ^ / hcc/hcf«bib 64-STAGE STATIC SHIFT REGISTER • • • • F U L L Y S T A T IC O P E R A T IO N : DC TO 16 M Hz TYP. V DD- V SS= 15V S T A N D A R D T T L D R IV E C A P A B IL IT Y ON Q O UTPUT R E C IR C U L A T IO N C A P A B IL IT Y

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product