BCY71 BS Search Results

BCY71 BS

Contextual Info: BCY71 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

BCY70

Abstract: BCY72 BCY71 BGY71 transistor bcy70 BCY71A
Contextual Info: BCY70 . . . BCY72 PNP Silicon Epitaxial Planar T ransistors for industrial switching and amplifier applications The BCY71 and BCY71A feature low noise figures. max .0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g

BCY85

Abstract: to92c KM9011 bf394 BSY78 BSX51A BSY73 BSY89 BCY70 BCY72
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE Pd RITY IC IC VCEO mW (mA) (V) min fl Cob N.F. IC min max max (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS max VCE max (mA) (V) (V) (mA) (MHz) BCY70 BCY71 BCY72 BCY78 BCY79 P P P P P TO-18 TO-18 TO-18

2N2102

Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er am plification from D C to radio frequencies in Com mercial, Industrial and M ilitary

bc140

Abstract: BSV16 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er am plification from D C to radio frequencies in Com mercial, Industrial and M ilitary

BC560AP

Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C

BC107 equivalent transistors

Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device

2N3053 equivalent

Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
Contextual Info: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005

2N2222A zetex

Contextual Info: ZETEX S E M I C O N D U C T O R S IbE D • TTVDSTfl OOObfl4ö ñ ■ ZETB METAL CAN SPECIFICATIONS ~rz°i - Z 3 NPN LOW NOISE Type ZT91 ZT92 BSY55 ZT93 ZT86 ZT88 ZT89 ZT90 ZT95 BCY65E 2N2484 ZT94 ZT83 ZT84 BCY59 BCY56 2N930 2N2219A 2N2222A ZT81 ZT82 BCY58

2N2102

Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices sh ow n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military

replacement BC107

Abstract: 2N4124 bc548 BC109C replacement bcy71 replacement 2n3053 replacement 2n2222a REPLACEMENT 2N4126 bc548 2n3019 equivalent BC109C datasheet 2n4125 equivalent
Contextual Info: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483

BC107 equivalent transistors

Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

mps6514 replacement

Abstract: replacement BC107 bsx45 replacement BC109C replacement 2n2222a REPLACEMENT pxt2907 smd replacement of 2N3053 2n2905A replacement 2n2222a smd P2T2907
Contextual Info: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

Contextual Info: SbE D • T cJ70S7fl OOObTTfc. 57=} ■ ZETB ' T /2.'7-0 | PNP LOW LEVEL ZETEX SEMICONDUCTORS TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRA N SISTO RS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military

EQUIVALENT TRANSISTOR bc108

Abstract: bc109 equivalent BC107 equivalent transistors transistor t05 equivalent transistor of 2n2219a BC177 equivalent BC107 equivalent bc325 bc143 BC107
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads—38,1mm (1,5in) at a small extra

2N2102

Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 bc107
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

cv8616

Abstract: BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200 200

BSX21

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO bvebo !CBO Ct VCBO (V) (V) (V) (HA) MIN MW MM MAX 'ICES *'ICEV h RE @ lc (mA) (V) MIN 0 VCE VCE(S/V T )0 » c Cob (V) MAX 00 (mA) MAX fr NF ton toff <PF) (MHZ) (dB) (ns) (ns)

2N4033

Abstract: 2001 PNP TO-92 TO-92 2001 MPSA642 BSV12
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors SWITCHING TRANSISTORS CONTINUED LEADED TYPES ratings characteristics type V CEO 'c P.O, hFE number max. max. (mW) min./max.

2N1131

Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60

BC187

Abstract: AMPL BSV68 BSX19 equivalent 2N5183 2N6430 2N6431 2N6432 2N6433 BC110
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ µA) (V) (V) (V) (µ MIN MIN MIN VCB (V) MAX hFE MIN @ IC @ VCE VCE (SAT) @ IC (mA) (V) (V) (mA) MAX MAX COB fT NF (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX

EN930

Abstract: BCY70 BCY71 BCY72 BCY78 BCY79 BCY85 BCY86 BF394 BFW22
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY fl Cob N.F. IC VCE max IC min max max mA (V) (V) (mA) (MHz) (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max P P P P P TO-18 TO-18 TO-18 TO-18 TO-18 300 350 350 350

2N6432

Abstract: 2N5183 2N6430 2N6431 2N6433 BC110 BC393 BC394 BC477 BCX22
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION 2NS183 NPN AMPUSW ITCH 2N6430 NPN HIGH VOLTAGE 2N6431 NPN HIGH VOLTAGE BVCBO BVCEO bvebo ICBO (V) on (V) (HA) MIN MIN MIN MAX *ICES *ICEV 18 18 7.0 0.5 200 200 6.0 300 300 6.0 @ lc h FE