BCY 66 Search Results

AS5V

Abstract: Q62702-C254 BCY 85 PNP-Transistoren
Contextual Info: PNP-Transistoren fü r rauscharme N F-Vorstufen BCY 67 BCY 67 ist ein epitaktischer PNP-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41 876 T O -1 8 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist be­ sonders für rauscharme NF-Vorstufen verwendbar (Komplementärtransistoren dazu BCY 66).

transistor buv 90

Abstract: BCY 85 Q60203-Y66 BCY 66
Contextual Info: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).

tfk 731

Abstract: N100700 bcy 79 BCY58 BCY 65 BCY 59
Contextual Info: BCY 58 • BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W 0 Power dissipation 1 W

Siemens 1736

Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Contextual Info: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

transistor tic 106

Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
Contextual Info: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

10RJ

Abstract: KCB05 BCY67 F-05 Q62702-C254 510zma 5v 10rj
Contextual Info: 55C D • fl235bOS 000431^ 1 SIEG BCY67 7 ^ ^ 7 - Z- 3 PNP Silicon Planartransistor SIEMENS AKTIENfiESELLSCHAF 04319 BCY 67 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided

29Z3

Abstract: Transistor CODE FR m7am
Contextual Info: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided

BCY67

Abstract: HTI 2E 101S Q62702-C254
Contextual Info: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in

59VIII

Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018
Contextual Info: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ

59VIII

Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
Contextual Info: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at

transistor BC 584

Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Contextual Info: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

2sc 9015

Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
Contextual Info: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

2sc 9015

Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

Contextual Info: DATEREV NC A FOSITROMC N H JSnO ES BEUEVES THE DATA ON TTflS ORAWNG TO BE RELIABLE, SM C E THE TECHNICAL INFORMATION 6 OMEN FREE O F CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H B OWN DBCREIW N AND R 6K. POSITRONIC M D U SIR ES ASSUM ES NO RESPONSIBILITY FOR RESULTS OBTAINED OR DAMAGES

adc crosstalk

Abstract: PCM3060 G003 PCM3060PW TSSOP-28 T0247 AT-126
Contextual Info: BurrĆBrown Products from Texas Instruments PCM3060 SLAS533 – MARCH 2007 24-BIT, 96/192-kHz ASYNCHRONOUS STEREO AUDIO CODEC FEATURES • • • • • • 24-Bit Delta-Sigma ADC and DAC ADC, DAC Asynchronous Operation Stereo ADC: – High Performance: Typical, 48 kHz