BCW65 EC Search Results

BCW65CR

Abstract: bcw66
Contextual Info: PART OBSOLETE - USE BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60

BCW65AR

Abstract: BCW65BR BCW66HR BCW66GR BCW65CR BCW65 BCW65A BCW65B BCW65C BCW66F
Contextual Info: BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10µA IC=10µA

MARKING CODE EA

Abstract: EA transistor transistor transistor EH sot-23 transistor marking code SOT-23 BCW65A BCW66H DEVICE MARKING CODE table marking code 5 marking EA BCW65
Contextual Info: Central BCW65 SERIES BCW66 SERIES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and

BCW65A

Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -

BCW65 ec

Abstract: BCW66H BCW65AR
Contextual Info: Not Recommended for New Design Please Use BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA

BCW65A

Contextual Info: Central BCW65 SERIES BCW66 SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and

MARKING CODE EA

Abstract: "MARKING CODE EA"
Contextual Info: BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for

Contextual Info: BCW65 SERIES BCW66 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for

BCW66

Abstract: transistor EH sot-23 BCW65 BCW65A BCW65B BCW66F BCW67 BCW68 ferranti BCW66H
Contextual Info: * FERRANTI semiconductors BCW65 BCW66 NPN Sil icon Planar Medium Power Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW67 and BCW68. Encapsulated in the popular SOT-23 package these devices

BCW65

Abstract: EA SOT-23 BCW66 BCW67 BCW68 BCW65 ec EC marking NPN EA SOT-23 PNP
Contextual Info: BL Galaxy Electrical Production specification NPN General Purpose Amplifier BCW65/66 FEATURES Pb z For general AF appilications. z High current gain. z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68 PNP Lead-free APPLICATIONS

Contextual Info: BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 65A EA BCW 65B EB BCW 65C EC BCW66F EF BCW 66G EG BCW 66H EH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

Contextual Info: Transistors IC SMD Type Product specification BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1 +0.1

Contextual Info: BCW65, BCW66 NPN Silicon AF Transistor 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 PNP 2 1 Type Marking Pin Configuration BCW65A EAs 1=B 2=E 3=C SOT23 BCW65B EBs 1=B 2=E

BCW65

Abstract: BCW65A BCW65B BCW65C BCW66 BCW66F BCW66G BCW66H BCW67 BCW68
Contextual Info: BCW65, BCW66 NPN Silicon AF Transistor 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 PNP 2 1 Type Marking Pin Configuration BCW65A EAs 1=B 2=E 3=C SOT23 BCW65B EBs 1=B 2=E

CE 65 M

Abstract: BCW65CR
Contextual Info: PLESSEY SEMICOND/DISCRETE □3 DE I 7EEG533 0D0bL,33 □ NPN silicon planar medium power transistors BCW65 BCW66 ABSOLUTE M A X IM U M RATINGS Parameter Symbol B C W 65 B C W 66 Unit Collector-Emltter Voltage V ces 60 75 V Collector-Emitter Voltage V ceo 32

CW65

Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1935_ P A R T M A R K IN G D E T A IL S B C W 65A - EA B CW 65A R - BCW 65B - EB B C W 65B R - 4V 5V B CW 65C - EC B C W 65C R - 6V B CW 66F - EF B CW 66FR -

pac 007a

Contextual Info: rS Z S G S -T H O M S O N Ä T # M iS B m iC T l « ! BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type M arking BCW 65A EA BCW 65B EB BCW 65C EC BCW 66F EF BCW 66G EG BCW 66H EH . SILICO N EPITAXIAL PLANAR NPN T R A N SIST O R S . MINIATURE PLASTIC PAC KAG E FO R

BCW66

Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - A U G U S T 1995 P A R T M A R K IN G D E T A IL S B C W 6 5 A - EA _ B C W 6 5 A R - 4V B C W 65BR - 5V B C W 6 5 B - EB B C W 6 5 C - EC B C W 6 6 F - EF BC W 65CR - 6V B C W 6 6 G - EG

marking code E3t

Contextual Info: SIEMENS NPN Silicon AF Transistors BCW 65 BCW 66 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP Type BCW BCW BCW BCW BCW BCW 65 65 65 66 66 66 A B C F G H Marking

transistor C458

Abstract: NPN C458 c458 NPN transistor TRANSISTOR C460 transistor C461 c458 transistor transistors c458 c460 transistor C458 C459
Contextual Info: BCW 65, BCW66 NPN Transistors for AF driver stages and switching applications B C W 65 and B C W 66 are epitaxial NPN silicon planar transistors in a plastic package 23 A 3 DIN 41 869 SOT-23 for use in driver stages and switching as well as universal applications. They are particularly suitable for thick and thin film circuits. Both types

BCW66

Contextual Info: SIEMENS NPN Silicon AF Transistors • • • • BCW 65 BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 PNP Type Marking Ordering Code (tape and reel) PinC onfiguration 2

Contextual Info: T - w NPN Silicon AF Transistors 32E D SIEMENS/ • 023b32Q SPCLi Q G lb b ^ 1 - n IS I P BCW 65 BCW 66 SE MI CONDS For general A F applications High current gain Low collector-emitter saturation voltage Complementary types: B C W 67, B C W 68 PNP Type Marking

p20n60

Abstract: CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 2N1948 2SC733BL PTC139 BC183K BC183KC BC183 BC183C BCl84 ZTX384 2N5963 2N5963 2N5963 PMBT5088 2N718A UPI718A 2SC482

SOT-23 marking AFE

Abstract: 65 b S
Contextual Info: NPN Silicon AF Transistors • • • • B CW 65 B CW 66 For general AF applications High cu rre n t gain Lo w co lle c to r-e m itte r saturation voltage C om plem entary types'. BCW 67, BCW 68 PNP Type □ BCW 65 A □ BCW 65 B S BCW 65 C Marking EA