BCW60RA Search Results

Contextual Info: BCW60RA Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)32è V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

2N50b

Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A

BCX70RJ

Abstract: BCX70RH BCW60RA BCX70RK marking ag
Contextual Info: ITT SEmCOND/ I NTE RME TALL SOE J> 4 bf l2 7 1 1 DDG2 S 7 Ô 4 4 fl IS I BCW60, BCX70 1— r NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. « Especially suited for automatic insertion in thick- and thin-film circuits.

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BCX70RG

Abstract: BCX70RK BCX70RJ
Contextual Info: 4684955 I T T SEMICONDUCTORS ~ fl7 87 D 0 2 3 2 1 D l f | 4 b f l 4 ,i S S G D Q E3S1 S I D NPN TRANSISTORS NPN Silicon Transistors Plastic Package TO-236 Marking Code VcEO h FE at VcEsat at Ices I c/ I b V ce/ I c C0b fT til •5:> Type at at Vce/Ic Vcb