BCR 150 V- 12 Search Results

SC-75

Contextual Info: BCR 129T NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ 2 C 3 1 R1 1 2 B E VPS05996 EHA07264 Type Marking BCR 129T WVs Pin Configuration 1=B 2=E Package 3=C SC-75 Maximum Ratings

Contextual Info: BCR 129S NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=10kΩ) Type Marking Ordering Code Pin Configuration

Contextual Info: BCR 129 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 129 WVs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

VPS05604

Contextual Info: BCR 129S NPN Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated Transistors with good matching in one package • Built in bias resistor (R1=10kΩ) 2 3 1 C1 B2 E2

W967d6hb

Abstract: W967 CRAM 256mb
Contextual Info: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

Contextual Info: BCR 129 NPN Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 129 WVs 1=B Q62702- Package 2=E 3=C SOT-23 Maximum Ratings

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

Contextual Info: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ

synchronous nor flash

Abstract: BCR10 M69KB128AB bcr100
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8 V Supply, Burst PSRAM Preliminary Data Feature summary • Supply voltage – VCC = 1.7 to 1.95 V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable operating modes – Asynchronous modes: Random Read, and

Contextual Info: um Cermet Chip Resistors Series BC AC FEATURES _ • Standard Sizes BC - 1206 AC - 0805 • 1%, 2%, 5% tolerance • ±100PPM/°C, ± 200PPM /°C, ± 300PPM /°C • Zero ohm jumper • Cermet Resistance Element • High Purity Alumina Substrate

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns

BCR10

Abstract: M69KB128AB
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable Operating Modes – Asynchronous Modes: Random Read, and

Contextual Info: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

A19 SMD transistor

Abstract: HYE18P32160AC HYE18P32160AW-15
Contextual Info: Data Sheet, V2.2, July 2004 HYE18P32160AW-12.5 HYE18P32160AW-15 32M Synchronous Burst CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Data Sheet, V2.2, July 2004 HYE18P32160AW-12.5 HYE18P32160AW-15 32M Synchronous Burst CellularRAM

Contextual Info: SAB 82532 Preliminary 5 Electrical Specifications 5.1 Absolute Maximum Ratings Ambient temperature under bias Storage temperature Voltage on any pin with respect to ground to to to -65 -0.4 70 125 VDD + 0 .4 Note: Stresses above those listed here may cause permanent damage to the device.

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

IC 555

Abstract: ic555 IC 555 as temperature controller IC 555 working marking W4s
Contextual Info: BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from less than 0.2mA up to more than 200mA

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

WD1010-05

Abstract: WD1100-21
Contextual Info: WESTERN O R P O R A DIGITAL T I O N WD1100-21 C WD1100-21 Buffer Manager Support Device FEATURES 6-BIT AUTO-INCREMENTING ADDRESS BUS 128, 256, 512, OR 1024 BYTES PER SECTOR DETECTOR SELECTS UP TO 4 DISK DRIVES SELECTS UP TO 8 HEADS PER DRIVE PROVIDES A RAM CHIP ENABLE AND READY