BC857 ITT Search Results

Contextual Info: BC856 BC857 BC858 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M a rk in g BC856 = 3D BC856A - 3A BC856B - 3B BC857 = 3H BC857A = 3E BC857B - 3F BC857C - 3G BC858 - 3M RC858A = 3J BC858B - 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m

Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M ark in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H J - 0_ BC857A = 3E 2.8 0 .14 0.48 BC857B = 3F BC857C = 3G 0.38 BC858 = 3M 3 BC858A = 3]

Contextual Info: 7 PLESSEY SEMICOND/DISCRETE dF| 7 5 2 0 S 3 B D D G b b a O 5 | ~ ^ ~ Q 3 BC856 BC858 BC860 PNP silicon planar general purpose transistors BC857 BC859 A B S O L U T E M A X I M U M R A TIN G S Parameter Sym bol Collector-base voltage V cbo BC856 -8 0 BC857

bcb57b

Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
Contextual Info: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80

transistor bc 649

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 17 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING • Low curren t max. 100 mA

Contextual Info: MOTOROLA Order this document by BC856ALT1/D SEMICONDUCTOR TECHNICAL DATA BC856ALT1 ,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1 ,BLT1, CLT1 General Purpose Transistors PNP Silicon BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857

Contextual Info: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857

bc 184 transistor

Abstract: BC857AR transistors 3Kr transistors marking HJ BC856AR 3AR 3ER 3FR on TRANSISTOR BC 187 TRANSISTOR BC 187 BC856 BC857
Contextual Info: 1 N AMER PHILIPS/DISCRETE ^53*131 G015537 Ö OLE D BC856 BC857 BC858 T ' W - i S ' SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film circuits.

BC856B

Abstract: BC666 BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A
Contextual Info: • bbS3^31 0024471 4b4 BIAPX N AMER PHILIPS/DISCRETE BC856 BC857 BC858 b?E D J V . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 C o lle c to r-e m itte r voltage + V g g = 1 V

c857

Abstract: TRA BC857 KH SOT23
Contextual Info: r Z 7 SGS-THOMSON Ä T # Kffloeœiniera «® BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

BC656

Contextual Info: MAXIMUM RATINGS Symbol BC856 BC857 BC858 Unit C o lle ctor-E m itter Voltage Rating v CEO -6 5 -4 5 -3 0 V C ollector-Base Voltage v CBO -8 0 -5 0 -3 0 V Em itter-Base Voltage v EBO - 5.0 - 5 .0 - 5 .0 V >C '1 0 0 -1 0 0 -1 0 0 m A dc C o lle ctor C u rrent — C ontinuous

Contextual Info: BC856 BC858 BC860 S 0 T 2 3 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC857 BC859 PAR TM AR KIN G D ETAILS:BC 856A - 3A B C 858C - B C 856B - 3B BC 859A - 4A 3L B C 857A - 3E BC 859B - 4B B C 85 7 B - 3F B C 859C - 4C B C 85 7 C - 3G B C 8 6 0 A - 4E

BC858R

Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P tra n s is to rs , in a S O T -2 3 p la s tic package. Q U IC K R E F E R E N C E D A T A C o lle c to r-e m itte r vo lta g e + V g g = 1 V ~ V CEX C o lle c to r-e m itte r vo lta g e (o pen base)

TRA BC857

Abstract: LT1M
Contextual Info: MAXIMUM RATINGS Symbol BC856 BC857 BC858 Unit C o lle c to r -E m itte r V o lta g e Rating v CEO -6 5 -4 5 -3 0 V C o lle c to r-B a s e V o lta g e VCBO -8 0 -5 0 -3 0 V E m itte r-B a s e V o lta g e v EBO - 5.0 - 5.0 - 5.0 V 'c -1 00 -1 00 -1 0 0 m Adc

BC860

Abstract: Q002 BC846 BC850 BC856 BC856A BC856AR BC857 BC858 BC859
Contextual Info: ITT SEMICOND/ INTERMETALL 5ÜE ] • i4bfi5711 ÜQDBS^Lf bTO H I H n -2 .q -is BC856 . . . BC860 PNP Silicon Epitaxial Planar Transistor fo r sw itching and AF am plifier applications. i — i— n -n b - Especially suited for automatic insertion in thick- and thin-film

bc860

Abstract: MARKING CODE 3J marking 4A
Contextual Info: ITT SEMICOND/ INTERMETALL SDE T> • Mbñ2711 0DD2S'ì4 b’iG M I S I T - a q - i s BC856 . . . BC860 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits.

BC857

Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C

BC857 ITT

Abstract: bc859
Contextual Info: BC856 . BC859 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC856

Contextual Info: BC856 THRU BC859 Small Signal Transistors PNP FEATURES SOT-23 .118 ( 3 . 0 ) .016 ( 0 .4 ) ♦ PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits.

3B marking

Abstract: BC846-BC848 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C
Contextual Info: BC856A - BC858C VISHAY PNP SURFACE MOUNT SMALL SIGNALTRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available

C858C

Contextual Info: BC856A - BC858C VISHAY PNP SURFACE MOUNT SMALL SIGNALTRANSISTORS /uTE M ir I POWER SEMICONDUCTOR J Features • • • • • Epitaxial Die Construction Ideally Suited tor Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BW T1, CWT1 PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.

ku 602 vc

Abstract: difference between bc856a bc856b
Contextual Info: M O TO R O LA Order this document by b c 8 5 6 a w ti/d SEMICONDUCTOR TECHNICAL DATA General Purpose TVansistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BW T1, CWT1 PNP Silicon designed for low power surface mount applications. Motorola Preferred Devices

Contextual Info: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING