BC849 BC850 Search Results

BC849

Abstract: BC849B BC849C BC850 BC850B BC850C BC859 BC860
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1998 Aug 06 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850

Contextual Info: _ BC849 BC850 / SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A BC849 Collector-em itter voltage VgE = 0 Collector-em itter voltage (open base) BC850 V CES max.

BCS49C

Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BC849 * 2D BC849B = 2B BCS49C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 •538 ! 3 2.6 Pin configuration 2.4 1 = BASE

Transistors

Abstract: BC849 BC850 BC850C BC849 BC849B BC849C BC850 BC850B BC859 BC860
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 16 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA

BC849

Abstract: 2f bc850 BC849B BC849C BC850 BC850B BC850C
Contextual Info: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D For Complementary With PNP Type BC859/860. BC850 BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage 30 VCBO

bc849

Abstract: bc850c
Contextual Info: DISCRETE SEMICONDUCTORS DAT BC849; BC850 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA

BC850

Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER

Contextual Info: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D ・For Complementary With PNP Type BC859/860. H MAXIMUM RATING Ta=25℃ BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage

BC850C

Abstract: 2F PNP SOT23 BC849C 2G BC850C NXP BC849B BC849 BC849B BC850 BC850B BC859
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA

BC849

Abstract: BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS

2f bc850

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G

BC849

Abstract: 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF
Contextual Info: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage VCEO 30 UNIT P V 50 30 V 45 P J BC850 VCBO 1 VEBO 5 V IC

Contextual Info: PLESSEY SEMICOND/DISCRETE :r 03 DE 1 7 B 2 0 5 3 3 □ OGbL.lb T '- BC846 BC848 BC850 NPN silicon planar general purpose transistors -2. f - f S BC847 BC849 ABSOLUTE MAXIMUM RATINGS Symbol BC846 BC847 BC848 BC849 BC850 Parameter Collector-base voltage Unit

Contextual Info: BC846 . BC849 BC846 . BC849 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

IC marking jw

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_

W15NA

Contextual Info: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14

Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N - P - N transistors M a rk in g BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m 3.0 2.8 0.48 - — s !^ _ P in c o n fig u ra tio n 2,6

bc850

Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A BC849 BC850 V CES max. 30 50 v CEO max. 30 45 C o lle ctor cu rre n t peak value 'CM max. 200 200 T ota l power dissipation up to T am fj = 25 °C

CMA102

Abstract: marking 2gp BC849 BC849B BC849C BC850 BC850B BC850C silicon planar epitaxial transistors
Contextual Info: • ^53*131 00244b2 4SI HIAPX BC849 BC850 b7E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. Q U IC K R E F E R E N C E D A T A BC849 C o lle c to r-e m itte r voltage V g E = C o lle c to r-e m itte r voltage (open base)

C849

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Aug 06 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low curren t max. 100 mA

BC850 SOT23

Abstract: 2FP TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors

2FP TRANSISTOR

Abstract: BC850B 2gp Transistor BC849 BC849B BC849C BC850 BC850C BC859 BC860
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1997 Sep 02 Philips Semiconductors Product specification NPN general purpose transistors

2FP TRANSISTOR

Abstract: 2gp Transistor BCB50C BC850 BCB50 marking 2Fp BC849C BC849 bc849b bc850c, sot23
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.

BC846R

Contextual Info: BC846,BC847,BC848,BC849,BC850 SERIES 30/45/65 Volts VOLTAGE 330 mWatts POWER SOT-23 Unit：inch mm • General purpose amplifier applications 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • NPN epitaxial silicon, planar design • Collector current IC = 100mA