BC35 Search Results

Contextual Info: SynSEMi T O -92 Plastic Encapsulate Transistors 5YN5EMI SEMICONDUCTOR BC350 FEATUR TRANSISTOR P NP TO — 92 ES oo^ Power dissipation 1.EMITTER Pcm : 0.3 W (Tamb=25 °C) Collector current 2. BASE Icm : -0. 1 A Collector base voltage V< b r )c b o : -50

BC350

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC350 TRANSISTOR PNP 1.EMITTER 2.BASE FEATURES z General Purpose Switching and Amplification. 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: VRLA Rechargeable Battery Measures Technology Values Innovation BC35-12FR BC35-12 Standard Type FEATURES Maintenance free(no water topping-up required) No free acid(Non-spillable battery) Can be used in any orientation(excluding used inverted) Absorbent Glass Mat technology for efficient gas recombination

D496

Abstract: RE40 TRANSISTOR GB 558
Contextual Info: BCM ArrayTM BC352R110T030VM-00 Features • 352 V to 11 V VI BRICK BCM Array • 300 Watt 450 Watt for 1 ms Vin = 330 – 365 V Vout = 10.3 – 11.4 V Iout = 27.3 A K = 1/32 Rout = 15 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies

2SA1211

Abstract: A5T4061 A8T4061 LOW-POWER SILICON PNP TP5372 ST8704 st823 BCY18 KT209D ST8014
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 -60 -65 -70 75 -80 85 90 - 95 Y BR CEO hFE (V) V(BR)CEO 5 Manufacturer 2SA504 2N5448 BFT61 BFT61 TD2905 2N937 ST8700 KT214El BCY18 BCY18 2N3527 PN5138 2N5138 2N1255 BC351 BC351A BC351B

IRIG B generator

Abstract: IRIG B TANS III GPS IRIG B time sync hardware IRIG-b irig b converter NASA36 IRIG am output circuit bc350VXI IRIG amplitude
Contextual Info: bc635VME/bc350VXI Time and Frequency Processor 8500-0019 User’s Guide Rev. D June 2000 This Page Intentionally Left Blank Declaration of Conformity Application of Council Directive s Standard(s) to which Conformity is Declared 89/336/EEC EN 50081-1, EN 50082-1

BC351

Contextual Info: CRO BC351 PNP SILICON TRANSISTOR TO-92A DESCRIPTION BC351is PNP silicon planar transistor designed for AF small signal amplifier stages. EBC M CO , II o CONDITIONS IC = lmA IC = 100j*A IE=0 IE = 100 uA IC=0 VCB=20V IE=0 VCE=5V IC=2mA IC=2mA VCE=5V IC=2mA VCE=5V

BC351

Contextual Info: BC351 PNP SILICON TRANSISTOR TO-92A DESCRIPTION BC351is PNP silicon planar transistor designed for AF small signal amplifier stages. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation

D496

Abstract: RE40
Contextual Info: BCM ArrayTM BC352R110T060VM-00 Features • 352 V to 11 V VI BRICK BCM Array • 600 Watt 850 Watt for 1 ms • Vertical mount package reduces footprint • Integrated heat sink simplifies thermal management Vin = 330 – 365 V Vout = 10.3 – 11.4 V

BC352

Abstract: sac 187 217F D496 D505 352v
Contextual Info: BCM ArrayTM BC352R440T065VM-00 Features • 352 Vdc – 44 Vdc 650 W VI BRICK BCM Array • Integrated heatsink simplifies TM thermal management • Vertical mount package reduces footprint • High efficiency >95% reduces system Size: 3.54 x 0.56 x 1.13 in

sac 187

Abstract: 217F D496 D505
Contextual Info: BCM ArrayTM BC352R440T033VM-00 Features • 352 Vdc – 44 Vdc 325 W VI BRICK BCM Array • Integrated heatsink simplifies TM thermal management • Vertical mount package reduces footprint • High efficiency >95% reduces system Size: 3.54 x 0.56 x 1.13 in

BC358

Abstract: BC327 BC328 BC337 BC338
Contextual Info: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC350 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.3 W (Tamb=25℃) 2. BASE Collector current -0.1 A ICM: Collector-base voltage -50 V V(BR)CBO:

BC417

Abstract: 2SA544 2N5124 LOW-POWER SILICON PNP 2N5120 BF541
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 - 25 30 BC350B BC350L 2SA544 2SA544 2SA544 2SA552 KT2091 KT5011 BC807 BC636 92GE77A BF541 2N3857 BC204 TMPA813 2N5119 2N5122 2N5122 2N5122 2N5125 ~~~g~ BC281 A MMBA813S2 MMBA813S2 2SA813S2 ZTX503 ZT183

BC350

Abstract: transistor BC350 datasheet of ic 555 IC 555 f-30MHz
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC350 TRANSISTOR PNP TO—92 FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range

transistor d509

Abstract: D496 RE40 BC352
Contextual Info: BCM ArrayTM BC352R110T030VM-00 Features • 352 V to 11 V VI BRICK BCM Array • 300 Watt 450 Watt for 1 ms Vin = 330 – 365 V Vout = 10.3 – 11.4 V Iout = 27.3 A K = 1/32 Rout = 15 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies

Contextual Info: BC Personal 350VA Ultra-compact Standby 120V UPS MODEL NUMBER: BC350 Highlights 350VA ultra-compact 120V standby UPS Maintains AC output during power failures 3 UPS battery supported outlets, 3 surge-only outlets NEMA 5-15P input plug and 6 NEMA 5-15R outlets

BC351

Contextual Info: CRO BC351 PNP SILICON TRANSISTOR TO-92A DESCRIPTION BC351is PNP silicon planar transistor designed for AF small signal amplifier stages. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation

transistor BC350

Abstract: BC350
Contextual Info: BC350 BC350 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.3 W (Tamb=25℃) 2. BASE Collector current ICM: -0.1 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: BC350 BC Personal 350VA Ultra-compact Standby 120V UPS Highlights 350VA ultra-compact 120V standby UPS Maintains AC output during power failures

Contextual Info: EOL - Not Recommended for New Designs; Alternate Solution is BCM352x110y300A00 BCM Bus Converter BC352A110T024FP Advanced Sine Amplitude Converter SAC™ Technology Features • 100°C baseplate operation • Typical efficiency 95% • 352 V to 11.0 V Bus Converter

Contextual Info: EOL - Not Recommended for New Designs; Alternate Solution is BCM352x440y330A00 BCM Bus Converter BC352A440T033FP Advanced Sine Amplitude Converter SAC™ Technology Features Size: 1.91 x 1.09 x 0.37 in 48,6 x 27,7 x 9,5 mm • 100°C baseplate operation

BF479

Abstract: 2N5456 2SA1409-L KT361 2SB793 bsw21 LOW-POWER SILICON PNP 2SB1117L 2sb1117k BC357
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2SA719 2SA730 BC357 BC357 BC357 BSW73 KT3107G BC178 BC178A 2SA890 ~~~g~g 15 20 KT31 070 BC178B MPS6519 2SC2724 2SB766 2SB766A 2SB793 2SA1409L 2~A141UL 25 30 2SA1411 2SA1411 2SA1409K 2SA1410K KT361 A

Contextual Info: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN