BC338 TRANSISTOR Search Results

BC548

Abstract: BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C
Contextual Info: Small Signal General Purpose Transistors Part No. and Polarity NPN BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 KSP8099 MPSA06 KSP06 MPS8098 KSP8098 MPSA05 KSP05 MPS6602 MPS2222A KSP2222A MPS6513 MPSA10 MPSA20 MPS2222 KSP2222

2n2222 -331 transistors

Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Contextual Info: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111

BC337 noise

Abstract: BC327 Q1 BC337 sot23 BC327 sot23 Transistor BC327 Q1 bc557c BC549B BC327 SOT 23 bc558b equivalent 2N4401 surface mount
Contextual Info: SMALL SIGNAL BIPOLAR TRANSISTORS VCEO Volt Low Noise 30 Switching 25 30 40 Leaded TO-92 NPN BC549B BC549C 2N4124 BC338-16 BC338-25 BC338-40 BC548A BC548B BC548C 2N3904 2N4401* MPS2222A* BC547A BC547B BC547C Package Surface Mount Device SOT-23 PNP NPN PNP

BC337 pnp transistor datasheet

Abstract: transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC327 BC328 BC337-16
Contextual Info: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

bc337 pin out diagram

Abstract: bc337 BC337 figure BC33740 BC337-40 BC337-16 bc338-25 BC-337-16 BC337 pin out BC337-25
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25 Vdc Collector −Base Voltage VCBO 50 30 Vdc Emitter −Base Voltage

Contextual Info: Bipolar Transistors Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222

BC337

Abstract: bc337 pin out diagram BC33 7-25 BC337 figure BC338-25 BC33x bc33725g BC33 BC337G BC337RL1G
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector − Emitter Voltage VCEO 45 25 Vdc

bc337 pin out diagram

Abstract: BC337 BC337 figure bc337-25 bc338-25 BC33740 BC337 pin out BC337-16 bc337-40 BC337 typical application
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Package is Available* 2 BASE MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25

Contextual Info: BC337 / BC338 BC337 / BC338 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case

BC337 figure

Abstract: bc337 BC338-25 BC337-40 BC337-25 BC33825 BC33740 BC337-16 BC338 BC337 hfe
Contextual Info: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO

BC337

Abstract: BC338 BC337 MOTOROLA Motorola BC337
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643

BC337 figure

Abstract: BC337 BC337 NPN transistor datasheet BC338
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

BC337 CBE 1,0 A

Abstract: BC337-25 CBE BC337-16 CBE BC337 CBE 10D3 BC327 BC328 BC337 BC337-16 BC337-25
Contextual Info: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2010-05-27 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6 ±0.1 4.6 2 x 1.27 625 mW

BC337

Abstract: BC338 BC337 figure
Contextual Info: ON Semiconductort Amplifier Transistors BC337,-16,-25,-40 BC338,-16,-25,-40 NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous

Contextual Info: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

bc337-40 npn transistor

Abstract: BC337 bc338 complementary BC337A JA02 BC337-40 BC33840
Contextual Info: BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

bc337

Abstract: cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716
Contextual Info: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO

BC337

Abstract: TRANSISTOR BC337-25 bc337 transistor datasheet BC338 BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16
Contextual Info: BC337/338 BC337,-16,-25,-40 TRANSISTOR NPN BC338, -16,-25,-40 FEATURES Power dissipation TO-92 PCM: 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range

Contextual Info: TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR NPN TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30

transistor bc237 bc337

Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage

CBC337

Abstract: BC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 BC338 bc337-40 le
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN Silicon BC337,- 16,-25,-40 BC338,- 16,-25,-40 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle c to r-E m itte r Voltage VCEO 45 25 Vdc

BC358

Abstract: BC327 BC328 BC337 BC338
Contextual Info: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,