BC337-40 ITT Search Results

CBC337

Abstract: BC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 BC338 bc337-40 le
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN Silicon BC337,- 16,-25,-40 BC338,- 16,-25,-40 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle c to r-E m itte r Voltage VCEO 45 25 Vdc

cbf420

Abstract: BC556A BS170 116 BC558A BC549B NPN 2n3904 2N3904 cbf421 BC546A BC338-16
Contextual Info: List of Types Type Page Type Page Small-Signal Transistors NPN Small-Signal Transistors (PNP) 2N3904 2N4124 BC337-16, -25, -40 BC338-16, -25, -40 BC546-A, -B BC547-A, -B, -C BC548-A, -B, -C BC549-B, -C BC817-16, -25, -40 B C 8 1 8 -1 6,-25, -40 BC846-A, -B

BC337 ITT

Abstract: 8C338 BC337 BC337 leads pin configuration Bc337 bc338 complementary pin configuration Bc338
Contextual Info: BC337, BC338 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit­ able for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current

BC337 MOTOROLA

Abstract: BC337 BC337 figure
Contextual Info: MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle ctor-E m itter Voltage v CEO 45 25 Vdc C ollector-Base Voltage v CBO 50 30 Vdc Em itter-Base Voltage v EBO 5.0 Vdc Collector C urrent — Continuous 'c 800 m Adc TDtal Device D issipation ui T a = 25'C

BC337

Abstract: TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 328 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

bc338

Contextual Info: M O T O R O L A SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon B C 3 3 7 , - 1 6 , - 2 5 , - 4 0 B C 3 3 8 , - 1 6 , - 2 5 , - 4 0 COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage C ollector-B ase Voltage E m itter-B ase Voltage

C 337-25

Abstract: BC337 figure BC337 MOTOROLA bc338-40 BC337-40 SBC337
Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon BC337,-1 6 ,-2 5 ,-4 0 B C 338,-16 ,-2 5 ,-4 0 COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC337 BC338 25 Vdc 30 Vdc Unit VCEO 45 C ollector-B ase Voltage

Contextual Info: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *

BC337A

Contextual Info: D BC337 BC337A BC338 ^ 5 3 ^ 3 1 Q027530 5T4 H A P X N AUER PHILIPS/DISCRETE _ / V _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers.

bc337-40 npn transistor

Abstract: BC337 bc338 complementary BC337A JA02 BC337-40 BC33840
Contextual Info: BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

BC327

Abstract: BC328 BC337 BC338 C338 BC327-25
Contextual Info: Rating Symbol BC327 BC328 -2 5 Vdc -3 0 Vdc VcEO -4 5 Collector-Base Voltage v CBO -5 0 Emitter-Base Voltage Collector-Emitter Voltage Unit V ë BO -5 .0 Vdc Collector Current — Continuous 'c -8 0 0 mAdc Total Device Dissipation @ Ta = 25”C Derate above 25°C

BC338

Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
Contextual Info: b^E D • bL S3^131 DDE753D 5T4 BC337 BC337A BC338 IAPX N AflER P H I L I P S / D I S C R E T E SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic T O -92 envelopes, p rim a rily intended fo r use in d riv e r and o u tp u t stages o f a udio a m plifiers.

8C337

Abstract: 8C327 8C337-16 3C337 3C327A BC337A sc337 BC328 BC337 BC338
Contextual Info: !< - BC337^ BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 variant envelopes, prim arily intended fo r use in driver and o u tp u t stages o f audio amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C 327A and BC328 respectively.

BC338C

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage

OF TRANSISTOR BC337

Abstract: BC337 leads
Contextual Info: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR / u T E M ir I POWER SEMICONDUCTOR J Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E J L A TO-92

C 337-25

Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).

BC337

Abstract: DS21610
Contextual Info: BC337 NPN EPITAXIAL PLANAR TRANSISTOR Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

PM2907A

Abstract: PM2907 min60 ITTA05
Contextual Info: IM tkCr LEAD MOUNTED TRANSISTORS NPN TRANSISTORS / TO-92 Type Number ^060 OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C hF E VcE' l 0 Volts V/m A max.V mA'mA PN2222A 40 100-300 10/150 1.0 500/50 10<’> 2N3904 40 100-300 1/10 0.3 50/5 50<2> 2N4401

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

2N3904 pin diagram

Abstract: ic pin diagram diodes inc 2N5551 2N3906 pin diagram 2N5551 diodes inc BC547 ITTA05 to-92 type 2n5401 2n3904 2N3904
Contextual Info: Lead M ounted Transistors NPN Transistors/TO-92 VCEO Volts 25 25 30 40 40 40 60 80 160 300 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 M PS A05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 hpE @ VCE/IC V/mA 1/2 120-360 10/10 100-750 350-1400 5/1 100-300 10/150

bc337 cross-reference

Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

10D3

Abstract: 1G14 C 337-40
Contextual Info: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.

TRANSISTOR pnp BC328

Abstract: BC327 BC328 BC337 pnp transistor
Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage

TRIMMER capacitor 160 pF

Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Contextual Info: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e