XL1225 equivalent
Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055
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2n29552sa9522n30552sb1426+112n3417xl1225 equivalent2n3053 equivalentbf422 equivalentbc238 equivalent2n6397 equivalent2n5551 equivalent2sb772 equivalentbc109 bc184 bc5492sd880 equivalentbt169 equivalent
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bc238 equivalent
Abstract: BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC237 BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC237 BC238 BC239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage
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bc237bc238bbc239bc238+13226aare218amsc1621t1msc2404bc238 equivalentbc237 equivalentbc237 equivalent transistorbc237c equivalentnpn transistor bc238b equivalentbc238 h parameterbc237 pin lay-outbc237 sot23bc237v
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BC107 equivalent transistors
Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
Contextual Info: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued
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2n16132n17112n18932n2219+162n2219a2n2222/a2n2369/a2n24842n29052n2905abc107 equivalent transistors2n5401 equivalentbc557 equivalent2n2907 equivalent2n2905 replacementbc327 equivalentbc237 equivalentmpsa06 equivalentequivalent for bc337bc327 replacement
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bc237 smd
Abstract: microwave sensor microwave distance sensors ne 556 timer bc237 equivalent SMD microwave RADAR motion sensors microwave motion sensors motion sensor doppler motion sensor doppler effect motion DOPPLER
Contextual Info: APPLICATIONS SENSORS Gerhard Lohninger Microwave sensor SMX-1: Opening doors by invisible hands Microwave sensors have two key advantages over other motion sensors: they are independent of temperature and can make direct use of the Doppler effect. The SMX-1 microwave sensor with its
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bc237 smdmicrowave sensormicrowave distance sensorsne 556 timer+6bc237 equivalent smdmicrowave radar motion sensorsmicrowave motion sensorsmotion sensor dopplermotion sensor doppler effectmotion doppler
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transistor equivalent 2n5551
Abstract: bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C
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mmbf5460lt1236abcharacteris218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636transistor equivalent 2n5551bf245 equivalenttransistor equivalent book 2n5401j-fet 2n3819mmbf4856lt1mil-std-750 method 1037bc2372n5551 equivalentmps3640 equivalentmotorola 2n2222 transistor
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MMBF4856
Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage
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mpq3906therm218amsc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv1642mmbf4856bc237bf244bc177 pnp transistorbf245 motorolammbt8599l
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BC237
Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3441xt1t218amsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3455xt1t218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1k 2056 transistor
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BF245 application note
Abstract: BC237 alternative bipolar transistors book MPS2369 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPS404A PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –35 Vdc Collector – Base Voltage VCBO –40
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mps404a226aasymbol218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640bf245 application notebc237alternative bipolar transistors bookmps2369 equivalent
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2N16
Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf1p02elt1l218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv16422n16bc237bcy72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3442xt1t218amsc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv16422n2222 h 331 transistors2n2222 -331 transistors2n2222 331 transistorsbc2372n2222 h 331marking code diode sod123 w1
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motorola JFET 2N3819
Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current
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mmbfj309lt1mmbfj310lt1236abmsc1621t1+11msc2404msd1819amv1620mv1624motorola jfet 2n3819c4 sot-323equivalent transistor 2n1711mvm010marking code c5 sot23bc237jfet 2n3819 motorola
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transistor motorola 2n3053
Abstract: Transistor BC107 motorola transistor equivalent 2n5551 symbol transistor BC108 transistor equivalent book 2N5401 BC107 Transistor application notes 2N2904 transistor TO92 Transistor BC107b motorola MOTOROLA 2n2102 TRANSISTOR TRANSISTOR BC107B die
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MPSA18 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 Vdc Collector – Base Voltage VCBO 45
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mpsa18226aarqja218amsc1621t1+16msc2404msd1819amv1620mv1624mv1636mv1640transistor motorola 2n3053transistor bc107 motorolatransistor equivalent 2n5551symbol transistor bc108transistor equivalent book 2n5401bc107 transistor application notes2n2904 transistor to92transistor bc107b motorolamotorola 2n2102 transistortransistor bc107b die
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BC237
Abstract: S11S C4 SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc
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mmbf4416lt1236abcha218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636bc237s11sc4 sot-323
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BC237
Abstract: BC109C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3904 NPN Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage
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mpq3904r218amsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237bc109c
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2N3906 MOTOROLA
Abstract: 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage
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2n39052n3906226aaresist218a+15msc1621t1msc2404msd1819amv1620mv1624mv16362n3906 motorola2n3906 replacement2n3906 transistor replacementbc237equivalent transistor 2n17112n3905 equivalent2n1893 equivalentapplications of transistor bc108bc141 equivalent
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BC237
Abstract: 2n2904 2n2905
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc
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mpsw55mpsw56226aether218a+6msc1621t1msc2404msd1819amv1620bc2372n2904 2n2905
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BC237
Abstract: BC108 plastic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP) Part of the GreenLine Portfolio of devices with energy–
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mgsf3454xt1t218amsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237bc108 plastic
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 80 mΩ (TYP) Part of the GreenLine Portfolio of devices with energy–
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mgsf3455xt1t218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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transistor equivalent book 2N5401
Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage
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2n54002n5401226aaresist218a+12msc1621t1msc2404msd1819amv1620transistor equivalent book 2n54012n5401 equivalentbc237918 transistor pnpbc547 collector base emitter2n5401 1482n5400 replacement2n2222 2n5401 2n5551
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BC237
Abstract: diode H5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. P–CHANNEL ENHANCEMENT–MODE
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mgsf1p02lt1enhanceme218amsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237diode h5
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BC237
Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3455vt1t218amsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1
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BC237
Abstract: VN2410L equivalent sot323 w2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2410L 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc Drain – Gate Voltage VDGR 60 Vdc Gate – Source Voltage
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vn2410l226aat218amsc1621t1+9msc2404msd1819amv1620mv1624mv1636mv1640bc237vn2410l equivalentsot323 w2
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2N3819 MOTOROLA
Abstract: motorola 2N3819 BC237 MPS3563 diode marking w2 bc394 motorola MOTOROLA mvam108 motorola 2N2219 BC107B, MOTOROLA 2N4410 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 58 mΩ (TYP) Part of the GreenLine Portfolio of devices with energy–
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mgsf3442vt1t218amsc1621t1msc2404+16msd1819amv1620mv1624mv1636mv1640mv16422n3819 motorolamotorola 2n3819bc237mps3563diode marking w2bc394 motorolamotorola mvam108motorola 2n2219bc107b, motorola2n4410 motorola
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