BC109C TRANSISTOR Search Results

Contextual Info: BC109C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

bc109c

Abstract: BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C
Contextual Info: BC107, A, B thru BC109C M A XIM U M RATINGS Rating C o lle c to r-E m itte r V o lta g e Symbol BC 107 BC 108 BC 109C Unit v CEO 45 25 25 V dc C o lle c to r-B a s e V olta g e v CBO 50 30 30 Vdc E m itte r-B a s e V olta g e v EBO 6 5 5 C o lle c to r C u rre n t — C o n tin u o u s

TRANSISTOR bc107 current gain

Abstract: bc107a bc109 bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to the case • General purpose switching and amplification.

bc108b

Abstract: bc109c bc107 Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 bc109 Transistor BC109 BC107B
Contextual Info: BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier

Transistor BC109

Abstract: 8C109 BC109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A BC107 bc109c
Contextual Info: Datasheet 1 BC108,A,B,C BC1 0 9 , B, C BC 0 7 , A , B E O l l ll U ff H V w V lI l1 semiconductor Corp- NPN SI LI CON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 1 JEDEC T O - 8 CASE Manufacturers of World Class Discrete Semiconductors

TRANSISTOR bc108

Abstract: BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C BC107A Transistor BC109 BC108 applications of Transistor BC108
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 03 Philips Semiconductors Product specification NPN general purpose transistors

transistor BC107 specifications

Abstract: BC107 Transistor application notes TRANSISTOR bc108 Transistor BC107 TRANSISTOR DATASHEET BC107B BC109c TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors

bc109b datasheet

Abstract: BC337 BC547 bc237 bc546 bc108 TO-92 bc108b equivalent bc546 equivalent BC109B equivalent 2PC945K BC108 to92 2PC945P
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 800 60 2N2484 TO-18 60 50 360 250 2N4124

BC140 equivalent

Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18

BC208 transistor

Abstract: ME1120 bc207 BC208 BC207B BC208C BC209B BC209C BC209 BC208B
Contextual Info: Sem iconductors M icro-Electronics N P N Transistors N P N General Purpose Transistors m in max o < a lc mA BC107 45 6 110 500 2 BC1Q7A 45 45 6 6 110 240 260 500 2 2 20 20 5 5 110 110 900 260 2 2 BC107B BC108 BC 108A V a l c mA C 0b 0.6 0.6 100 100 2.5 2.5

BC548C

Abstract: BC107A BC108A BC108b ZTX301
Contextual Info: SEM ICO N D U CTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO h FE ^CBO V CE sat! at Dice type Min. Min. Wax. at VCB VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

Contextual Info: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) 0Tc=25°c ^C8Q (V) Min ^GEO ^EBO (V) Min (V) Min 2N915 70 50 5 0.36 2N916 45 25 5 0.36 2N929 45 45 5 0.5 ^CM *C80 ^C B

BC107C

Abstract: BC107 BC108A 2N915 bc109 BCY56 2N916 2N929 2N930 BC107A
Contextual Info: an Package Transistors NPN Maximum Ratings Type No. Pd (W) Tc=25"c Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2N915 70 50 5' 0.36 2N916 45 25 5 0.36 0.2 2N929 45 45 5 0.5 0.03 (A) 'cM 'cBO (A)

BC108A

Abstract: bc109
Contextual Info: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

bc327 smd

Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
Contextual Info: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A

bc207

Abstract: ME1120 bc208 BC209 BC113 BC207b BC209C BC107B fairchild BC207A BC209B
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE TABLE Max Ratings Code BC113 BC114 BC115 BC207 BC207A BC207B BC203 BC208A BC20IB BC209 BC209B

2N4007

Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
Contextual Info: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)

BC140 equivalent

Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

Contextual Info: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing

BC109 pin configuration

Abstract: BC109C pin configuration bc109 transistor BC109 BC109C BC109C datasheet DATASHEET Transistor BC109 BC109c transistor datasheet BC109B 30Hz
Contextual Info: BC109 Series Low Power Bipolar Transistors Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70

bcy59 equivalent

Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943

bc1078

Abstract: bc107 curves Characteristic curve BC107 Transistor BC1078 audio BC108 BC109 BC107 Transistor BC107 7z08 BC109 characteristic
Contextual Info: I I N AUER P H I L I P S / D I S C R E T E b'lE » • bfc.SB'iai □DS7Mtm 733 M A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. The BC107 is primarily intended for use in driver stages of audio amplifiers and in signal processing

BC107 pin configuration

Abstract: BC109 pin configuration BC109 BC109C pin configuration BC108 BC107 pin BC108 pin configuration bc107a pin out DATASHEET Transistor BC109 BC107
Contextual Info: BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension