BC 848 Search Results

transistors BC 23

Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
Contextual Info: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N

BC sot23

Abstract: sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23
Contextual Info: BC 856 . BC 860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846, BC 847, BC 848 2 BC 849, BC 850 NPN

C2335

Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
Contextual Info: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN

H12E

Abstract: VSO05561 marking 3GS 858W
Contextual Info: BC 856W . BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2

1Bs sot-23

Abstract: sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30
Contextual Info: BC 846 . BC 850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856, BC 857, BC 858 BC 859, BC 860 PNP

C1507

Abstract: b 857 Q62702-C1741 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 sot-23 MARKING CODE 1Gs C1741 C1761
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BC 846 . BC 850 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

transistor Bc 580

Abstract: TRANSISTOR BC 450 pnp transistor BC 660
Contextual Info: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data
For AF input stage and driver applications 3
High current gain
Low collector-emitter saturation voltage 1
complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration

H12E

Contextual Info: BC 857BL3, BC 858BL3 PNP Silicon AF Transistors Preliminary data
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage 1
Complementary types: BC 847BL3, 2 BC 848BL3 NPN Type Marking Pin Configuration

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,

C1741

Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
Contextual Info: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

C2310

Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
Contextual Info: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,

bc 212 equivalent

Abstract: MARKING CODE 21E SOT323
Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

transistors BC 848

Abstract: VSO05561 21E sot
Contextual Info: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2

sot-23 MARKING CODE 1Gs

Abstract: bc 846 BC850 BC846
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,

LT 450 mbr

Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,

transistor c2311

Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

transistor bc 487

Abstract: transistor bc 488 sot-323 transistor marking code 15
Contextual Info: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

BC 511

Abstract: Q62702-C2295 MARKING 3FS
Contextual Info: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,

Philips capacitor mkp

Abstract: Philips 46102 74112 74272 philips kp capacitors 14821 24512 74132 74202 BC05
Contextual Info: BC COMPONENTS DATA SHEET KP/MKP 375 AC and pulse metallized polypropylene film capacitors Product specification Supersedes data of March 1998 File under BC Components, BC05 1999 Apr 29 BC Components Product specification AC and pulse metallized polypropylene film

BC848

Abstract: BC847
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,

code 2F 850

Abstract: BC850
Contextual Info: NPN Silicon AF Transistors • • • • • For AF input stages and d river a pplications High cu rre n t gain Lo w c o lle c to r-e m itte r saturation voltage Lo w noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BC 856, BC 857, BC 859, BC 860 PNP

BC 245 C

Abstract: BC 245 6130-5X4 tda 5410 TDA6170X Q62702-F1250
Contextual Info: List of Types in Alphanumerical Order SIEMENS Type Ordering Code Page Type Ordering Code Page BA 595 Q62702-A952 160 BC 849 CW Q62702-C2311 189 BAR 64 Q62702-A1041 173 BC 850 B Q62702-C1885 181 BAR 64-04 Q62702-A1010 173 BC 850 BW Q62702-C2312 189 BAR 64-05

transistors BC 23

Abstract: 849B 847C 848B
Contextual Info: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1