BC 82 Search Results

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

transistors BC 23

Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
Contextual Info: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N

BS4 siemens

Abstract: BC 241 d0415 bc167 siemens bc169c siemens BC167 BC169B BC169 siemens Pm 90 87 168c
Contextual Info: S IE D i • Ö235b05 OGMlSlb ‘î l S « S I E G SIEMENS AKTIEN6ESELLSCHAF NPN Silicon AF Transistors BC 167 . BC 169 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 257, BC 258, BC 259 PNP Type BC BC BC

BC sot23

Abstract: sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23
Contextual Info: BC 856 . BC 860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846, BC 847, BC 848 2 BC 849, BC 850 NPN

R1003

Abstract: R1002 fptn R1003 diode 1SBN 05 0100 R1002 1sbn contactor coils r1004 R0003 1SBN 05 0200
Contextual Info: Surge Suppressors for Contactor Coils Ordering Details SB7610C3 For contactors BC 9 . BC 30, and KC TBC 9 . TBC 30 KC and TKC RT 7/. SB6186C3 BC 9 . BC 30 and KC BC 9 . BC 30 and KC 1 RV-BC 6/… SB7400C1 AE 9 . AE 110, TAE 45 . TAE 110 RV 5/50

C1507

Abstract: b 857 Q62702-C1741 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 sot-23 MARKING CODE 1Gs C1741 C1761
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BC 846 . BC 850 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

C2335

Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
Contextual Info: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN

C1507

Abstract: BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887
Contextual Info: PNP Silicon AF Transistors BC 856 . BC 860 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 NPN

Contextual Info: Document 159-1 ChipInductors – 0805HSSeries 2012 Ceramic body and wirewound construction provide highest SRFs available in 0805 size. Part Number1 0805HS-030T _ BC 0805HS-060T _ BC 0805HS-080T _ BC 0805HS-120T _ BC 0805HS-150T _ BC Inductance2 (nH) 3.3 @ 250 MHz

Contextual Info: Document 159-1 ChipInductors – 0805HSSeries 2012 Ceramic body and wirewound construction provide highest SRFs available in 0805 size. Part Number1 0805HS-030T _ BC 0805HS-060T _ BC 0805HS-080T _ BC 0805HS-120T _ BC 0805HS-150T _ BC Inductance2 (nH) 3.3 @ 250 MHz

Contextual Info: Document 159-1 ChipInductors – 0805HSSeries 2012 Ceramic body and wirewound construction provide highest SRFs available in 0805 size. Part Number1 0805HS-030T _ BC 0805HS-060T _ BC 0805HS-080T _ BC 0805HS-120T _ BC 0805HS-150T _ BC Inductance2 (nH) 3.3 @ 250 MHz

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

H12E

Abstract: VSO05561 marking 3GS 858W
Contextual Info: BC 856W . BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2

EM 257

Abstract: BC257 bc257 siemens BC257B BC258 A235L TR BC BC258A BC258B siemens 1q
Contextual Info: SIE D SIEMENS • öE3SbGS GDMlSHfi 425 H S I E 6 SIEMENS AKTIENGESELLSCHAF T - 2 S \- Z \ PNP Silicon AF Transistors BC 257 . BC 259 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 167, BC 168, BC 1 6 9 NPN

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,

bc847bc

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856. BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,

bc 212 equivalent

Abstract: MARKING CODE 21E SOT323
Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,

bc856

Abstract: bc 856
Contextual Info: SIEM ENS PNP Silicon AF Transistors BC 856 . BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

857T

Abstract: 857BT
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

bc 471

Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
Contextual Info: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN

857T

Abstract: BC857AT BC857BT SC-75
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

capacitor electrolytic BC

Abstract: BC 2222 136 68221 15-05-410
Contextual Info: BC COMPONENTS 150 RMI Aluminium electrolytic capacitors Radial Miniature, Low Impedance Preliminary specification Supersedes data of February 1999 File under BC Components, BC01 1999 Apr 14 COMPONENTS BC Components Preliminary specification Aluminium electrolytic capacitors

transistor bc 102

Abstract: PHILIPS BC 116 Series Electrolytic Capacitors philips ELECTROLYTIC capacitors bc bc 813 philips ELECTROLYTIC capacitors 035 Philips electrolytic BC 140 61102 BC 2222 136 68221 philips ELECTROLYTIC capacitors bc components capacitors
Contextual Info: BC COMPONENTS DATA SHEET 140 RTM Aluminium electrolytic capacitors Radial High Temperature Miniature Preliminary specification Supersedes data of May 1998 File under BC Components, BC01 1999 Feb 17 BC Components Preliminary specification Aluminium electrolytic capacitors