BC 308 Search Results

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Contextual Info: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

BC307D

Abstract: BC307 BC309B 308C BC308C BC309 BC309 Motorola
Contextual Info: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307,B,C PNP Silicon BC308C BC309B COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 307 BC 308C BC 309 Unit Collector – Emitter Voltage VCEO –45 –25

spf 557

Abstract: BC415B BC415A 416C 307B 307C 308B 308C 309B 5V125
Contextual Info: /moll /ignol Tran/i/tor/ Electrical Characteristics @ T A ='25°C Maximum Ratings T Y P E NO. PNP PD •c b v cbo *-V CEO bv E bo hpE @ V CE @ 'C min./max. @ T a = 25°C BC BC BC BC BC 2 63 B 263C 266 266A 266B 3 60 rnW 360m W 300m W 300m W 300m W 200m A

BC 114 transistor

Abstract: bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 CDIL BC307
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification

TRANSISTOR 237b

Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
Contextual Info: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification

BC413

Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
Contextual Info: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP

bc 357 transistor datasheet

Abstract: bc 309 b transistor BC307 bc 357 transistor BC308 BC 114 transistor BC307A low noise transistor bc transistor BC 308 BC309
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification

MMKP 383 capacitor

Abstract: 40362 20624 BC05 BC 560 philips Philips 50153 mMKp Philips Capacitors 1043100v 40363
Contextual Info: BC COMPONENTS DATA SHEET MMKP 383 AC and pulse double sided metallized polypropylene film capacitor Product specification File under BC Components, BC05 1999 Apr 29 BC Components Product specification AC and pulse double sided metallized polypropylene film capacitor

Contextual Info: PRO ELECTRON SERIES USE TYPE Pc Tj mA (mW) fC ) GENERAL PURPOSE *BC 167 45 100 300 150 GENERAL PURPOSE *BC 168 20 100 300 LOW NOISE *BC 169 20 50 300 GENERAL PURPOSE BC 237 45 100 300 h FE VCE (V) ic (mA) 1 Î0 -4 6 0 5 ISO 120-800 5 2 150 180-800 5 2 150

2sc 9015

Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K

transistors BC 183

Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
Contextual Info: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

BCR12DM-4

Abstract: bcr12dm BCR12DM-10 BCR12DM-12 BCR12DM12 equivalent BCR12DM-8 330B BCR12CM-10 BCR12CM-12 BCR12CM
Contextual Info: - o M t tö H J iü if f l H f f li O t ! ' 7 7,'< -> • < — -> a > a f f li • "< U / b £ : ( ^§- I drm Vtm BC R12CM -4 BC R12CM -6 BC R12CM -8 BC R12CM -10 B C R 1 2 C M - 12 V d sm 300 400 600 700 800 Vd ru 200 300 400 500 600 ìiW 5e & F »3 I± 8 ,

Bc 140 transistor

Abstract: TRANSISTOR BC 141 bc 187 npn transistor TRANSISTOR BC 187 transistor BC 310 transistor bc 102 on BC 187 TRANSISTOR TRANSISTOR BC 140 bc140 bc 141
Contextual Info: BC 140 BC 141 NPN SIL IC O N T R A N SIS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 160 and BC 161 Switching and amplifier Commutation et amplification Maximum power dissipation Case TO-39 Dissipation de puissance maximale B o îtie r A B SO LU T E R A T IN G S ^LIMITING V A LU ES

Contextual Info: TABLE OF COHIENTS BC 2.5SB HEADER. 301 TB

BC238

Abstract: 238C BC239 25CC BC237 BC237A BC307 BC308C JE125 BC239C
Contextual Info: BC237,A,B,C BC238,B,C BC239,C M A X IM U M R A TIN G S S ym b o l R a tin g BC BC BC U n it 237 238 239 Co Ilector-E m itter Voltage VCEO 45 25 25 Vdc C o lle cto r-E m itte r Voltage VCES 50 30 30 Vdc Vebo 6.0 5.0 5.0 Vdc Em itter-Base Voltage CASE 29-04, STYLE 17