BC 237 B Search Results

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

BC238B

Abstract: BC237 BC239 BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 237 BC 238 BC 239 Unit Collector – Emitter Voltage VCEO 45 25 25

Contextual Info: PRO ELECTRON SERIES USE TYPE Pc Tj mA (mW) fC ) GENERAL PURPOSE *BC 167 45 100 300 150 GENERAL PURPOSE *BC 168 20 100 300 LOW NOISE *BC 169 20 50 300 GENERAL PURPOSE BC 237 45 100 300 h FE VCE (V) ic (mA) 1 Î0 -4 6 0 5 ISO 120-800 5 2 150 180-800 5 2 150

BC 2388

Abstract: BC739 BC236 BC237B 239b BC237A BC231 bc2376 06008v BC238
Contextual Info: ^ BC237 BC238 BC239 OßtCf MAXIMUM RATINGS R*l»r»V Symbol Collector-Emitter Voltage BC BC BC 237 231 239 Unit v e to 45 25 25 Vdc Collector Emitter Voltage VCfS 50 30 30 Vdc £»ni»t<r-8i*e Voltage v i9 0 6 0 SO 5.0 Vdc Collector Current - Continuous 100

TR BC 237 B

Abstract: TR BC 238 C238B 239 BC bc237v
Contextual Info: BC237,A,B,C BC238,B,C BC239,C M A X IM U M R A TIN G S R a tin g Sym bol U n it BC BC BC 237 238 239 C o llecto r-E m itte r Voltage VCEO 45 25 25 C olle cto r-E m itte r Voltage VCES 50 30 30 Vdc vebo 6.0 5.0 5.0 Vdc E m itter-Base Voltage Vdc CASE 29-04, STYLE 17

transistor Bc 540

Abstract: TN2222 TN2222A TRANSISTOR BC 237 transistor bc icbo nA npn TR BC 237 B transistor bc 7-25 transistor Bc 540 pin
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR TN2222A TO-237 Plastic Package E BC For use as a Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage

transistor bc 7-25 014

Abstract: transistor bc 7-25 transistor Bc 540 transistor Bc 540 pin tn3904 transistor TN3904 transistor bc 138 bc 103 transistor TRANSISTOR BC 237 BC 540 TRANSISTOR
Contextual Info: Transys Electronics L I M I T E D NPN SILICON PLANAR SWITCHING TRANSISTOR TN3904 TO-237 Plastic Package E BC General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous

amd 2904

Abstract: BC237A BC239 BC237B BC237 BC238B BC238 238B BC239C
Contextual Info: l°ft! BC237,A,B,C BC238,B,C BC239,C M AXIM UM RATINGS R a tin g Sym bol BC BC BC 237 23 8 23S U n it C o tlecto r-E m itte r Voltage VCEO 45 25 25 Vdc C o lte c to r-E m itte r Vo ltage VCER 50 30 30 Vdc E m itter-B ase Voltage Vebo 6 .0 5 .0 5 .0 Vdc CASE 29-04, STYLE 17

2N6715

Abstract: MPS6715 HOTS
Contextual Info: 2N6715/PN6715/MPS6715 NATL S E M I CO ND n r Sç Cr Rh Ef T tE f DI 11E » | • bSG113D 0 2 * 5- | I . 0 3 7 2 ^QC- C Tl National Semiconductor 2N6715 t PN6715 MPS6715 J^ ^*'237 El^ "92 Bc Bc TL/G/10100-S 'OS ebc TUG/10100-1 TUG/10100-4 NPN General Purpose Amplifier

TRANSISTOR 237b

Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
Contextual Info: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5

transistors BC 183

Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
Contextual Info: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

BF-139

Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
Contextual Info: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

C237B

Abstract: BC237 bc239b
Contextual Info: MO TOROLA SC 12E O I k>3b?c!54 0005035 T | XSTRS/R F T-a?-}? BC237, A, B, C BC238, A, B, C BC239, B, C M A X IM U M RATINGS Sym bol R atin g U n it BC BC BC 2 37 2 3 8 2 39 C oltector-E m itter Voltage VCEO 45 25 25 Vdc C olle cto r-E m itte r Voltage VCES

BC 245 C

Abstract: BC 245 6130-5X4 tda 5410 TDA6170X Q62702-F1250
Contextual Info: List of Types in Alphanumerical Order SIEMENS Type Ordering Code Page Type Ordering Code Page BA 595 Q62702-A952 160 BC 849 CW Q62702-C2311 189 BAR 64 Q62702-A1041 173 BC 850 B Q62702-C1885 181 BAR 64-04 Q62702-A1010 173 BC 850 BW Q62702-C2312 189 BAR 64-05