BC 237 B Search Results

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: PRO ELECTRON SERIES USE TYPE Pc Tj mA (mW) fC ) GENERAL PURPOSE *BC 167 45 100 300 150 GENERAL PURPOSE *BC 168 20 100 300 LOW NOISE *BC 169 20 50 300 GENERAL PURPOSE BC 237 45 100 300 h FE VCE (V) ic (mA) 1 Î0 -4 6 0 5 ISO 120-800 5 2 150 180-800 5 2 150

transistor Bc 540

Abstract: TN2222 TN2222A TRANSISTOR BC 237 transistor bc icbo nA npn TR BC 237 B transistor bc 7-25 transistor Bc 540 pin
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR TN2222A TO-237 Plastic Package E BC For use as a Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage

2N6715

Abstract: MPS6715 HOTS
Contextual Info: 2N6715/PN6715/MPS6715 NATL S E M I CO ND n r Sç Cr Rh Ef T tE f DI 11E » | • bSG113D 0 2 * 5- | I . 0 3 7 2 ^QC- C Tl National Semiconductor 2N6715 t PN6715 MPS6715 J^ ^*'237 El^ "92 Bc Bc TL/G/10100-S 'OS ebc TUG/10100-1 TUG/10100-4 NPN General Purpose Amplifier

TRANSISTOR BC 213

Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

TRANSISTOR 237b

Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
Contextual Info: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5

transistors BC 183

Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
Contextual Info: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

BF-139

Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
Contextual Info: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

C237B

Abstract: BC237 bc239b
Contextual Info: MO TOROLA SC 12E O I k>3b?c!54 0005035 T | XSTRS/R F T-a?-}? BC237, A, B, C BC238, A, B, C BC239, B, C M A X IM U M RATINGS Sym bol R atin g U n it BC BC BC 2 37 2 3 8 2 39 C oltector-E m itter Voltage VCEO 45 25 25 Vdc C olle cto r-E m itte r Voltage VCES

Contextual Info: Æ T S C S -TH O M S O N TL081 TL081A - TL081B GENERAL PURPOSE SINGLE J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION

TS271

Contextual Info: r= 7 * 7 M , S C S -T H O M S O N M M I E J t ê T O i « T S 2 7 1 C ,I ,M PROGRAMMABLE SINGLE CMOS OPERATIONAL AMPLIFIERS • O FFSET NULL CAPABILITY by external compensation ■ SYMMETRICAL OUTPUT CURRENTS ■ HIGH GAIN BANDWIDTH PRODUCT ■THE TRANSFER FUNCTION IS LINEAR

pin diagram of ic tl084

Abstract: IC TL084 CIRCUIT DIAGRAM pin diagram of tl084cn
Contextual Info: /S T S G S -T H O M S O N T L 0 8 4 IM M [ R i« (ô M (g § T L 0 8 4 A - T L 0 8 4 B GENERAL PURPOSE QUAD J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT

LT 7237

Abstract: TL074M
Contextual Info: i Z J TL074 T L074A - TL074B S G S -T H O M S O N LOW NOISE QUAD J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ LOW NOISE en = 15nVA&#39;Hz (typ)

npn bc 337

Contextual Info: SIEMENS/ SPCLi SEMICONDS flflD D • ÔS3b32a DOlMaSb 4 « S I P T “- 2 ^ « 0 | Tran sisto rs — bipolar A F tran sisto rs P la s tic p ack a g e TO 92 Type NPN PNP Maximum ratings N P = = ¡c V cbo Characteristics T A = 25°C Figure fire Plo t ^CES*

BC 148 TRANSISTOR

Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
Contextual Info: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA

BC479

Contextual Info: 1 30E D • 7^^231 O Q aü^ia M ■ _ 1 S G S -T H O M S O N iLiC TlfM O O S S G S-THOMSON BC 477 B C 4 7 8 -B C 4 7 9 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC477, BC478 and BC479 are silicon planar epitaxial PNP transistors in TO-18 metal case. The

transistor bf 422 NPN

Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .