BB53531 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE b5E D • bb53531 0DSfl452 171 I IAPX BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

Contextual Info: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.

Contextual Info: N AUER PHILIPS/DISCRETE b5E D bb53531 0D27575 7bE • APX BC556 to 558 yv. SILICON PLANAR EPITAXIAL TRANSISTORS I General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA

equivalent transistor c 5888

Contextual Info: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency

Contextual Info: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

Contextual Info: N AUER PHILIPS/DISCRETE bRE D bb53R31 003040? flTfl M A R X Product Specification Philips Semiconductors BUK104-50L/S BUK104-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic

transistor bt 808

Abstract: transistor 1548 b
Contextual Info: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2

Contextual Info: bbSBRBl D O E n Q l 101 • APX Philips Sem iconductors Prelim inary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b^E » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Contextual Info: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

Contextual Info: i i N AMER PHILIPS/DISCRETE b^E D bbSBTBl 00B7SSfl bfl3 • APX BC546 to 548 L SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic TO-92 envelope, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve

BJE 42

Abstract: 9 BJE 42
Contextual Info: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

Contextual Info: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are

BJE 42

Contextual Info: Philips Sem iconductors bbS B TB l Q03QQ16 TST IM A P X Product specification VHF power MOS transistor BLF277 N AnER PHILIPS/BISCRETE FEATURES b*E ]> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

Contextual Info: Philip^emiconductor^^^^ U tb S 3 R 31 DQ 3 1 Q T 7 273 H IA P X Product specification NPN 6.5 GHz wideband transistor ^ BF751 N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING PIN • High power gain DESCRIPTION • Low noise figure 1 collector • Gold metallization ensures

BB135

Contextual Info: LLS3T31 Philips Semiconductors DD2b3Tl HM7 MB A P X Preliminary specification BB135 UHF variable capacitance diode N AMER PHILIPS/DISCRETE b'lE D Q U IC K R E F E R E N C E DATA DESCRIPTION The BB135 is a silicon, double-implanted variable capacitance diode in planar

Contextual Info: b b 5 3 c1 3 1 Philips S em iconductors 0030055 T27 M A P X Product specification VHF linear push-pull power MOS transistor BLF348 N AUER PHILIPS/DISCRETE b 'lE lT PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

Contextual Info: N A PIER PHILIPS/DISCRETE b5E T> m bbSBTBl DDE7flm DEE B A P X BSR50 to 52 I N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended fo r industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.

T34 rectifier

Contextual Info: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and