BBS3531 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b*}E ]> • bbS3T31 DOeTlS1! 30*+ H A P X PMHpsjem jcond uctors Preliminary specification Silicon bi-directional trigger device DESCRIPTION BR100/05 QUICK REFERENCE DATA Silicon bi-directional trigger device intended for use in triac and thyristor

Contextual Info: bbSBRBl D O E n Q l 101 • APX Philips Sem iconductors Prelim inary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b^E » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

2N5415

Contextual Info: N AUER PHILIPS/DISCRETE b TE bbSB'iai DQEfll7Q 444 D APX 2N5415 2N5416 SIL IC O N P-N -P HIGH -VO LTAG E T R A N S IS T O R S Transistors in TO -39 metal envelopes with the collector connected to the case. They are intended for high-speed switching and linear amplifier applications in military, industrial and commercial equipment.

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSETEl 00Eb5b5 TEb • APX _ Prelim inary specification Philips Sem iconductors_ Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD91

Contextual Info: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.

Contextual Info: bb53^31 G032b31 7b3 Ml AP X Philips Sem iconductors Product specification Magnetic field sensor KMZ10A1 N AMER PHILIPS/DISCRETE DESCRIPTION b^E l PIN CONFIGURATION The KMZ10A1 is an extremely sensitive magnetic field sensor, employing the magnetoresistive

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

BFR95

Contextual Info: PJjjjjP^ejjiconductor^^^^ • bbS3T31 0031flflM ^72 gg^py^Productspecification NPN 3.5 GHz wideband transistor BFR95 N AMER PH ILIP S/ D IS C R ET E DESCRIPTION b*1E D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.

Contextual Info: N A PIER PHILIPS/DISCRETE b5E T> m bbSBTBl DDE7flm DEE B A P X BSR50 to 52 I N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended fo r industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.

T34 rectifier

Contextual Info: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and

2N5460

Contextual Info: Philips Components Data sheet status Preliminary specification date of issue October 1990 DESCRIPTION P-channel silicon junction field-effect transistor in aTO-92 plastic envelope. It is intended for use as an analog switch and an amplifier. 2N5460/5461/5462