BAW62 PH Search Results

BAW62

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION

BAW62

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package

BAW62

Abstract: transistor BAW62 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 04 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION

BAW62

Abstract: 1970 oscilloscope T0309 T-03-09
Contextual Info: SbE D • 711002b 004031^ 231 M P H I N SbE D PHILIPS INTERNATIONAL BAW62 Jj U O C □ UU 1 r - o 3 ~ o * \ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA

diode rj 93

Contextual Info: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage

BAW62

Contextual Info: • bbSB'IBl DD2b352 40b « A P X N AMER PHILIPS/DISCRETE BAW62 blE D HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage

BAV105

Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30

MLA428-1

Abstract: BAW62
Contextual Info: Philips Semiconductors Product specification High-speed diode BAW62 FEA TU R E S D E S C R IP T IO N • Hermetically sealed leaded glass S O D 27 D O -35 package The BAW 62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass S O D 2 7 (D O -35)

pm2222a

Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT

PM7520

Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
Contextual Info: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION

ic TDA7021T

Abstract: TDA7050T BAW62 MS-012AA TDA7021T TDA7040T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA7040T Low voltage PLL stereo decoder Product specification File under Integrated Circuits, IC01 September 1986 Philips Semiconductors Product specification Low voltage PLL stereo decoder TDA7040T GENERAL DESCRIPTION The TDA7040T is a monolithic integrated circuit for low cost FM stereo radios with an absolute minimum of peripheral

BAS316 equivalent

Abstract: Zener Diodes 300v BAS16-03W BAS125 BAS40 equivalent bav20 BAS316 / BAS16-03W 1SS376 bas16 cross reference 1PS301
Contextual Info: Philips Semiconductors Small-signal Transitors and Diodes Cross Reference Diodes PHILIPS GA DIODES CROSS-REFERENCE Schottky diodes COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER BAS125 BAT54 BAS70-06W BAS125-04 BAT54S

TDA7021T

Abstract: TDA7040 BAW62 MS-012AA TDA7040T TDA7050T
Contextual Info: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.

Contextual Info: • bbS3S31 Q02M355 330 H A P X N AMER PHILIPS/DISCRETE BAV70 b7E J> JV SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists o f tw o diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

BAL99

Abstract: Philips MBB BAW62 sot23 BAW62 PH philips diode PH 15 ir 222 BAW62 D0242 LF MARKING CODE
Contextual Info: • Philips Sem iconductors . ^ bbSBTBl aaaMESM 513 H A P X _ _ — N AflER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

Contextual Info: bhsa^ai QQ242S4 S13 • APX Philips Semiconductors — — N AMER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications.

Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAL99 QUICK REFERENCE DATA PARAMETER

Contextual Info: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.

Contextual Info: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

Philips fr 153 30

Contextual Info: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.

Contextual Info: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55

NF-2000

Abstract: BAW62 BSH112 PIP250M HVQFN68
Contextual Info: PIP250M Integrated buck converter An innovative solution for Point of Load POL regulators Philips new PIP250M single-phase DC/DC synchronous buck converter integrates five component functionalities in a single package.This innovative multi-chip module provides

Contextual Info: • bbSBSBl 0054276 T57 H A P X N AUER PHILIPS/DISCRETE BAS28 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes.

Contextual Info: b b S S ' m 0024363 2T5 « A P X N AMER PHILIPS/DISCRETE BAV105 b?E D J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage