BAS16 BAV99 Search Results

BAV99

Abstract: bav70 BAW56
Contextual Info: BAV70 / BAW56 / BAV99 / BAS16 Diodes Switching diode BAV70 / BAW56 / BAV99 / BAS16 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplications Ultra high speed switching 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zFeatures 1) Small surface mounting type. (SSD3)

25CC

Abstract: BAS16 BAV99
Contextual Info: BAS16 & Discrete POW ER & Sig n a l Technologies National Semiconductor~ BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol ta- as-cun*«omessenoted Parameter Value Units W|v Working Inverse Voltage

Contextual Info: BAS16 Discrete POWER & Signal Technologies & National Semiconductor" BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol t a =25 c um^s otherwise noted Parameter Value Units Wiv Working Inverse Voltage

1N4150

Abstract: BAS16 BAV99 MMBD1201 A6 SOT-23
Contextual Info: BAS16 BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage

Contextual Info: Diodes Ultra High-Speed Switching Diode Array BAV70/BAW56/BAV99/BAS16 38 These products are marketed only in countries other than Japan. •Application •External dimensions Units: mm Ultra high speed switching •Features 1) Compact size 2) High reliability

BAV99

Abstract: bav70 BAW56 BAS16 BAV99 application Diode bav99 Diode bav70 BAS16 transistor BAV99 datasheet
Contextual Info: Diodes Ultra high–speed switching diode array BAV70 / BAW56 / BAV99 / BAS16 ✻This product is available only outside of Japan. FApplication Ultra high speed switching FExternal dimensions Units: mm FFeatures 1) Compact size 2) High speed (trr = 1.5ns Typ.)

IMP11

Abstract: dan212K DAN217 IMN11 DAP202U DAN202K DAP222 DAP202K UMN1N
Contextual Info: Diodes Ultra high–speed switching diode array BAV70 / BAW56 / BAV99 / BAS16 ✻This product is available only outside of Japan. FApplication Ultra high speed switching FExternal dimensions Units: mm FFeatures 1) Compact size 2) High speed (trr = 1.5ns Typ.)

BAX12 equivalent

Abstract: 1N4532 1n823a BAT721S BAX18 equivalent plva600a 1PS301 1PS59SB10 BFS20W BF840
Contextual Info: Philips Semiconductors Small-signal Transistors and Diodes Index TYPE NUMBER TYPE NUMBER TYPE NUMBER 1N821 1PS76SB70 BAL74 1N821 1PS79SB10 BAL74W 1N823 1PS79SB40 BAL99 1N823A 1PS79SB70 BAL99W 1N825 1PS88SB48 BAS16 1N825A 1PS89SB14 BAS16T 1N827 1PS89SB15 BAS16W

bav99

Abstract: BAW56 bav70 equivalent
Contextual Info: WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-23 Package

DO-213AA 1N4148

Abstract: sem 5020 MLL4148-1 JANTXV1N4148UR-1 LT 7247 lt 7246 1N4148 DL-35 PACKAGE microsemi DL4448 JANTX1N4148
Contextual Info: Signal/General Purpose Diodes Part Number JANTXV1N4454-1 JANTXV1N4454-1 JANTXV1N4454UR-1 ESA1N4150-1 ESA1N4151-1 BAS16 1N4148 1N4149 1N4446 1N4447 1N4448 1N4448 1N4449 1N914 OL4148 DL4448 DL914 A (B) MLL4148-1 MLL4454-1 MMBD4148 MMBD7000 MMBD914 JAN1N4148-1

BAV99

Abstract: BAV70 BAW56 BAS16 Diode BAV99 SOT23 Diode bav99
Contextual Info: WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-23 Package *Device per Reel Mount : 3k/Reel

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

BAW56

Abstract: SOT-23 BAS16 BAV99
Contextual Info: BAS16 BAV99 THRU SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-23 0.020 0.51 0.014(0.35) Low current leakage Low forward voltage 3 0.055(1.40) 0.047(1.19) Small outline surface mount SOT-23 PACKAGE 0.118(3.00) TOP VIEW 1 0.083(2.10) 2 0.041(1.05) 0.039(1.00) 0.033(0.85)

Contextual Info: WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions

BAS16 fairchild

Abstract: fairchild bas16 A6 DIODE bas16 a6 DIODE A6 BAS16 BAV99 a6 bas16
Contextual Info: BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage

Contextual Info: BAS16 BAV99 THRU SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-23 0.020 0.51 0.014(0.35) Low current leakage Low forward voltage 3 0.055(1.40) 0.047(1.19) Small outline surface mount SOT-23 PACKAGE 0.118(3.00) TOP VIEW 1 0.083(2.10) 2 0.041(1.05) 0.039(1.00) 0.033(0.85)

BAY84

Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
Contextual Info: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240

Contextual Info: S 5= M I C O N O L J C T C R y* BAS16 CONNECTION DIAGRAM _ a AC LFT~ BT SOT-23 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Param eter S ym bol V alu e

Contextual Info: Diodes/Transistors/LEDs Assortment Kit 42 \ nines mini t I k IIs /i S i m i l l Si ^ 11: 11 H i n d i s h i t I lim it s SOT23 SOT23 MMBD914 BAS16 MMBD2838 (BAV70) MMBD2836 (BAW56) MMBD7000 (BAV99) * SOD80 BAV100 LL914 LL4148 R lL 'IillL T S SOD80 l.ll \ 111|]

TO-236AB

Abstract: to236ab 236A BAS31 BAS35 BAV70 BAV74 BAV99 BAW56 TO-236-AB
Contextual Info: This I Q~ Material In t-1 t-> UJ □ Copyrighted aa jr aIn ru a tr jr •H By Its 1 Respective N> $ Discrete POWER & Signal Technologies National Semiconductor'" Device No. Pro Electron Surface Mount Diodes Vrrm V«m V Min <nA) Min BAS16 BAS 19 BAS20 BAS21

Contextual Info: Small Signal Diode SOT23 - —y Type Ratings 4“ ^ ^ 500 pcs vR 100 pcs Max Max 'f t rr cD SPECIFICATIONS Part Marking Single Diode BAS16 MMBD914 72-0016 72-0914 52-0016 52-0914 minilfeel 75V 250mA 6nS 2pF A6 100V 200mA 15nS 4pF 5D or D01 Schematic Top View

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

Contextual Info: D is c re te PO W E R & S ig n a l Technologies S g fy liG O N Q U Q T O R * BAS16 CONNECTION DIAGRAM M 13 " SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted

BAS3590

Abstract: BAY71 BA128 BA129 BA130 BA217 BA218 BA316 BA317 BA318
Contextual Info: National Semiconductor NATL Âæ Diode Pro Electron Series 75 200 30 30 50 10 30 50 100 50 100 50 50 200 200 200 1.0 1.0 1.0 1.0 1.0 0.85 0.85 0.85 50 100 10 10 10 10 10 10 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 75 100 150 200 90 90 90 1000 100 100 100