BAS12 Search Results

Contextual Info: Product specification BAS125 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 protection,bias isolation and clamping applications 0.55 For low-loss, fast-recovery, meter 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Integrated diffused guard ring

Contextual Info: bTE D • bbS3T31 OOEblfifl ATT ■ APX Philips Product specification Silicon glass passivated avalanche diodes BAS11/BAS12 N AMER PHILIPS/DISCRETE DESCRIPTION Glass passivated rectifier diodes in

Contextual Info: Philips Semiconductors Product specification Controlled avalanche rectifiers BASH; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating lmplotec 1 technology. • High maximum operating

BAS125

Abstract: BAS125-04W BAS125-05W BAS125-06W BAS125-07W MARKING 14S
Contextual Info: BAS125. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

Contextual Info: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts POWER SOT-23 250 mW Unit：inch mm 0.120(3.04) 0.110(2.80) • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion 0.103(2.60)

bas125

Contextual Info: BAS125. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS125-04W BAS125-05W ! ,  BAS125-06W ! ,  ,  BAS125-07W ! ,  ,  "

bas125

Contextual Info: BAS125. Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection, bias isolation and clamping application
Integrated diffused guard ring
Low forward voltage BAS125 BAS125-04 BAS125-04W 3 1 BAS125-05 BAS125-05W 3 2 BAS125-06 BAS125-06W

BAS11

Abstract: BAS12 marking 5b philips ScansUX40
Contextual Info: SbE ]> • 7 1 1 0 6 2 b 0 Q M 0 1 4 1 *ilb ■ P H I N _ . Philips Semiconductors Product specification T - G 7— is Silicon glass passivated avalanche diodes BAS11/BAS12 P HILIPS I N T E R N A T I O N A L DESCRIPTION SbE D QUICK REFERENCE DATA Glass passivated rectifier diodes in

smd JS

Abstract: BAS125 MARKING SMD 14 diode smd ja smd rf transistor marking BAS125-04 BAS125-05 BAS125-06
Contextual Info: Diodes SMD Type Silicon Schottky Diodes BAS125 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 protection,bias isolation and clamping applications 0.55 For low-loss, fast-recovery, meter 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: D IS C R E T E S E M IC O N D U C T O R S File under Discrete Semiconductors, SC01 Philips Semiconductors P H IL IP S PHILIPS Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES DESCRIPTION • Glass passivated

BAS11

Abstract: S12 MARKING DIODE BAS12 bas12 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12

bas125

Abstract: BAS125-04W BAS125-05W BAS125-06W BAS125W VSO05561
Contextual Info: BAS125W Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection, 3 bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage 2 1 BAS125W 1 3 BAS125-04W BAS125-05W BAS125-06W 3 3 3 1 2 1 2 EHA07005 EHA07002

BAS121

Abstract: BAS121C BAS121A BAS121S
Contextual Info: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts POWER 250 mW FEATURES • High Reverse Blocking Voltage • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion • In compliance with EU RoHS 2002/95/EC directives

BAS11

Abstract: S12 MARKING CODE DIODE S12 MARKING DIODE BAS12
Contextual Info: Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating lmplotec 1> technology. • High maximum operating

BAS125

Abstract: SMD DIODE MARKING 14s BAS125-04W BAS125-05W BAS125-06W BAS125W
Contextual Info: Diodes SMD Type Silicon Schottky Diodes BAS125W;BAS125-04W BAS125-05W;BAS125-06W Features For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Absolute Maxim um Ratings Ta = 25

BAS11

Abstract: BAS12 NC5R Avalanche diodes
Contextual Info: bTE D P hilips Sem iconductors • bb53T31 DDSblññ ÛTT H A P X _Product specification Silicon glass passivated avalanche diodes BAS11/BAS12 N AMER P H I L I P S / D I S C R E T E DESCRIPTION Glass passivated rectifier diodes in

sod91

Abstract: BAS11 BAS12 M3D122
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 11 Philips Semiconductors Product specification

VPS05605

Abstract: BAS125-07W 16200-1
Contextual Info: BAS125-07W Silicon Schottky Diode 3
For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Product specification BAS125W;BAS125-04W BAS125-05W;BAS125-06W Features For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Absolute Maxim um Ratings Ta = 25 Param eter Sym bol

Contextual Info: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts 250 mW MECHANICAL DATA Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : December 16,2011-REV.02 PAGE . 1

bas125

Abstract: BAS125-04W
Contextual Info: BAS125. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS125-04W BAS125-05W ! ,  BAS125-06W ! ,  ,  BAS125-07W ! ,  ,  "

Contextual Info: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE 250 Volt VOLTAGE POWER 250 mW 0.006 0.15 MIN. FEATURES 0.120(3.04) • High Reverse Blocking Voltage 0.110(2.80) • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion

bas125

Abstract: c2 sot323 BAS125-04W BAS125-05W BAS125-06W BAS125W VSO05561
Contextual Info: BAS125W Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection, 3 bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage 2 1 BAS125W 1 3 BAS125-04W BAS125-05W BAS125-06W 3 3 3 1 2 1 2 EHA07005 EHA07002

Contextual Info: Surface Mount Photo Diodes BPD-HQ Series Ceramic Bas1206 - PD AMERICAN BRIGHT w w w. a m e r i c a n b r i g h t l e d . c o m 714 257-0800 FAX (714) 257-1310 • 2000 American Bright Optoelectronics Corporation. Specifications subject to change without notice.