BAR14 Search Results

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

BAR64-03W

Abstract: BA585
Contextual Info: Microwave, RF & Tuner Diodes , _ _ . . . . , For com plete package outlines, refer to pages PO-1 through PO-6 PIN General Purpose, Switching Diodes T yp e BA582 BA585 BA586 BA592 BA595 BA596 BA885 BA886 BAR14-1 (Dual) BARI 5-1 (Dual) BARI 6-1 (Dual) BARI 7

BAR16-1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

Contextual Info: Product specification BAR14;BAR15;BAR16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 RF attenuator for frequencies above 10 MHz 0.55 RF switch +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low distortion factor +0.05 0.1-0.01 0-0.1 Absolute M axim um R atings T a = 25

marking code L7S

Abstract: BAR14-1 BAR15-1 BAR16-1 BAR61 BCW66 BFP181 marking L8s
Contextual Info: BAR1. / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  ,  ,  ,  ,  Type BAR14-1 BAR15-1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  , 

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

marking L7s

Abstract: marking L7s diode BAR14-1
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

BAR61

Abstract: BAR14-1 l8s 15 BAR15-1 BAR16-1 marking L8s marking L7s diode
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

MARKING l7

Abstract: sot-23 diode L9 transistor sot-23 marking L8 BAR14 BAR15 BAR16
Contextual Info: Diodes SMD Type Silicon PIN Diodes BAR14;BAR15;BAR16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 RF attenuator for frequencies above 10 MHz 0.55 RF switch +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low distortion factor +0.05 0.1-0.01

BAR16-1

Abstract: top marking c2 sot23 BAR14-1 MARKING GP SOT23 BAR15-1 marking L8s
Contextual Info: BAR14-1.BAR16-1 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 BAR16-1 3 3 3 1 2 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005 1 Type

Contextual Info: BAR14-1 Diodes Dual Series Connected PIN Diode Volt Req. V 100 @I(R) (A) (Test Condition) r(s) Max.(ê) Series Resist.2.8k @If (A)10u Ct{Cj} Nom. (F) Junction Cap.25p Carrier Lifetime (S)1.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)6.0m Maximum Operating Temp (øC)150

ym 238

Abstract: marking code L7S l8s 15 BAR14-1 BAR15-1 BAR16-1 BAR61 0154B
Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAR14-1 BAR15-1

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

KP2311E

Abstract: T60ms LQFP64 TDA7529 TDA7529TR af-hold af-sample am fm frontend
Contextual Info: TDA7529 RF front-end for AM/FM DSP car-radio with IF sampling Features • Fully integrated VCO for world tuning ■ High performance PLL for fast RDS system ■ I/Q mixer for FM IF 10.7MHz with image rejection and integrated LNA ■ I/Q mixer for AM IF 10.7MHz up conversion

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

BAR14-1

Contextual Info: SIEMENS AKTIEN6ESELLSCHAF bOE H • J23Sb05 0051MaM M83 « S I E G SIEMENS -T -07-16 Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Characteristics (TA= 25° C) Maximum Ratings Type 1, V Ct pF mA V BA 585

Contextual Info: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

SAF-TC11IB-64D96E

Abstract: p3x btr diagrams hitachi ecu Hitachi DSA00319 B.A. private examination 2011 manual 1746
Contextual Info: User’s Manual, V2.0, Sep. 2003 TC11IB System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2003-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2003.

1/929 rev oh s26

Contextual Info: ES51964 6600counts Dual Display Features • 6,600 counts dual LCD display • 128L QFP package • 3.3V DC power supply • Slow ADC Conversion rate : 2.8 times/s • Bar-graph ADC conversion rate: 28 times/s • Full automatic measurement *Voltage measurement: 660.0mV – 1000V