BABT Search Results

transformer ka

Abstract: CS61318 T1229
Contextual Info: T1/CEPT/ISDN-PRI TRANSFORMER For Use with Cirrus Logic CS61318 Chipset Extended and standard temperature range Dual and single through hole models available Models matched to leading transceiver ICs Most models UL 1459 and BABT EN 60950 recognized Isolation Voltage: 1500 Vrms MIN

Sumida DATE CODE

Abstract: AN1002 D10012 SD10012 Sumida Corporation TNETD3000
Contextual Info: D10012 SD10012 DSL Isolation Transformer PRODUCT COMPLIANCE FEATURES • For top-performance in ADSL modem line interfaces. • UL/C- UL recognized file number: • Drop in replacement for EP13. • BABT certificate of recognition: • Total Harmonic Distortion rated -90.8dB, typ. between

Contextual Info: REV. S t a t u s REVISION F REVISED AND REDRAWN ON CAD/CAM 0 4 / 0 9 / 9 2 TS REVISION G TEMECULA -W A S CARSON 0 5 / 2 9 / 9 8 TS LOW PROFILE BABT TELECOMMUNICATION COUPLING TRANSFORMER 600 : 600 C£ A. Electrical Specifications 25°C 1. 2. 4. 5. 6.

G6A-BS

Abstract: G6A-234P G6A-234P-BS12VDC babt BS6301 G6A-234P-BS EN4-10
Contextual Info: G6A–BS BABT Approved Relay BABT Approved Relay Meeting the Requirements of EN41003:1993 as endorsed, formerly BS6301:1989 Amendment 5 for Supplementary Isolation BABT BABT Approved No. CR/0098. Height of only 8mm from PCB. Wide switching load – 10µA to 2A.

ETAL

Abstract: BS7002 CTR21 P1200 P2001 P3034 TG25 ETAL P1200
Contextual Info: PRODUCT DATA SHEET P3034 LINE MATCHING TRANSFORMER Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Low Distortion 12.6mm 0.5" seated height Vacuum encapsulated IEC 950, UL 1950 and EN 60950 Certified UL Recognized Component BABT Certificate of Recognition

C3063

Abstract: c3063 japan SCR 600
Contextual Info: MOTOROLA O rder this docum ent by M QC3061/D SEMICONDUCTOR TECHNICAL DATA TO VD E UL CSA SETI ® SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output MOC3061 MOC3062 MOC3063* [IFT = 15 m A Max] [IFT = 10 m A Max]

triac driver opto moc3021

Abstract: MOC3Q23 Motorola Application Note AN-780A
Contextual Info: MOTOROLA O rder this docum ent by M QC3020/D SEMICONDUCTOR TECHNICAL DATA TO VD E UL CSA SETI ® SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r 6-Pin DIP Random-Phase Optoisolators Triac Driver Output MOC3021 MOC3022 MOC3023* [IFT = 15 m A Max] [IFT = 10 m A Max]

Contextual Info: /W v i c o n V“ DC-DC Conveners 25 to 100 Watts • ■ ■ ■ ■ ■ ■ ■ ■ ■ Up to 50W /Cubic Inch UL, CSA, TUV, BSI, VDE, BABT CE M arked 80-90% Efficiency Size: 2.28” x 2.4” x 0.5” 57,9 x 61,0 x 12,7 Remote Sense and Current Limit Logic Disable

Contextual Info: T1/CEPT/ISDN-PRI TRANSFORMERS Single Through Hole, 1500 Vrms Extended and standard temperature range Dual and single through hole models available Models matched to leading transceiver ICs Most models UL 1459 and BABT EN 60950 recognized Isolation Voltage: 1500 Vrms MIN

Contextual Info: MOTOROLA O rder this docum ent by M QC3081/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL & CSA SETI ® SEMKO DEMKO BABT NEMKO G lo bal Optoisola to r 6-P in DIP Zero-Cross Optoisolators Triac Driver Output MOC3081 M OC3082 [IFT = 15 m A Max] [IFT = 10 m A Max]

ULTRAFLEX

Abstract: BS6527 CSA950 VDE0871 WD300 WD305 lambda ultraflex power supply UL950 POWER SUPPLY 12V4A 0871
Contextual Info: 3.RËÎ' 3GvW multiple BABT Approved Lamda’s ultra-compact WD305 multiple output 300 EMI Conducted and Radiated to Level B watt power supply helps you create high density Psophometric Noise Less than 2mVrms WD305 unit has worldwide safety agency approvals

EN-60950

Abstract: babt 4 pin transformers
Contextual Info: T1/ CIPT/ISDN-PRI TRANSFORMERS P/N: S8841 DATA SHEET Page : 1/1 Feature ! Dual SMT package contains both transmit and receive Transformers. Model matched to leading transceiver ICs. UL 1459 and UL 1950 recognized. EN 60950 safety agency approval per BABT.

Contextual Info: ELECTRI CAL SPECI FI CATI ONS I nput Input……………36-75 VDC PS2365 Total Power Input Voltage Output 150 Watts 36-75 VDC 12V SPECI AL FEATURES • • • • • • • 36-75 VDC input UL, CSA, TUV, BABT Recognized Enable control active low EN55022 Class B

Contextual Info: MOTOROLA O rder this docum ent by M OC8080/D SEMICONDUCTOR TECHNICAL DATA T VDE O UL @ 1 CSA SETI SEM KO ® DEM KO NEM KO BABT MOC8O8O G l o b a l O p t o i s o la t o r 6 -P in DIP Optoisolator [C TR = 500% Min] Darlington Output M otorola Preferred Device

C3162

Abstract: 13TRIAC c3163
Contextual Info: MOTOROLA O rder this docum ent by M OC3162/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL < § •. CSA SETI SEM K O ® ® DEMKO NEMKO BABT MOC3162 MOC3163* [IFT = 10 m A M ax] G lobalO ptoisolator 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output

MOTOROLA 813

Abstract: c8107 8107 4 pin dip
Contextual Info: MOTOROLA Order this document by MOC8IO6/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL & ® CSA SETI SEMKO NEMKO DEMKO BABT Global Optoisolator 6-Pin DIP Optoisolators for Power Supply Applications No Base Connection MOC8 IO 6 MOC8107 MOC8 IO 8 [CTR = 50-150%]

til117 motorola

Contextual Info: MOTOROLA Order this document by MTIL117/D SEMICONDUCTOR TECHNICAL DATA UL CSA SETI BABT M TIL117 6-Pin DIP Optoisolator Transistor Output STYLE 1 PLASTIC The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

Contextual Info: MOTOROLA Order this document by M4N26/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI M4N26 BABT 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

Optoelectronics c3

Contextual Info: MOTOROLA Order this document by M4N37/D SEMICONDUCTOR TECHNICAL DATA TO UL f t CSA SETI M4N37 BABT 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

M4N35

Contextual Info: MOTOROLA Order this document by M4N35/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI BABT 6-Pin DIP Optoisolators Transistor Output The M 4N 35 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

mocz500

Contextual Info: MOTOROLA Order this document by MQCZ500/D SEMICONDUCTOR TECHNICAL DATA & TO VDE <§A UL CSA SETI ® SEMKO DEMKO NEMKO BABT G lo b a lO p to is o la to r M O CZ500 Motorola Preferred Device M ini Zero-C rossing AC SSR This device consists of a gallium arsenide infrared emitting diode optically

H11AV1

Contextual Info: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices

Contextual Info: ELECTRICAL SPECIFICATIONS Input Input……………85 -264 VAC; 47-63Hz; Power Factor >0.99 PS2357 Total Power Input Voltages Outputs 350 Watts 85-264 VAC Two SPECIAL FEATURES • • • • • • 85-264 VAC input with under voltage protection UL, CSA, TUV, BABT Recognized

FAN 7629

Abstract: E 7629 EN55022-B NAN55 EN60950 EN41003
Contextual Info: NAN55 SERIES Single, dual and triple output Recommended for low cost, high volume design ins 90VAC to 264VAC universal input range EN55022-B conducted noise Maximum component height 1.2 inches UL, CSA, VDE and BABT safety approvals Overvoltage and short circuit protection