ETAL Search Results

ac201

Abstract: ac199
Contextual Info: TC74ACT175P/F/FN QUAD D-TYPE FLIP FLOP WITH CLEAR The TC74ACT17S is an advanced high speed CMOS QUAD D -T Y P E F L IP -F L O P fabricated with silicon gate and double-layer m etal w iring CMOS technology. It achieves the high speed operation sim ilar to equivalent

2N335

Contextual Info: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR U LL E T IN NO. DL-S 591038. M A R C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures nw chw ical data W eld ed ca se w ith g lass-to -m etal h erm etic seal betw een ca se an d lead s. U n it w eig h t is ap p ro x im a te ly

Contextual Info: INTEGRATED TOSHIBA HEX TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC74AC05P/F/FN DATA SILICON MONOLITHIC INVERTER OPEN DRAIN The TC74AC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate and double - layer m etal wiring

AC128 EQUIVALENT

Abstract: AC131 2Y202a AC129 AC128
Contextual Info: TC74AC125P/F/FN. TC74AC126P/F/FN TC74AC12BP/F/FN Q U A D BUS B U F FE R TC74AC126P/F/FN Q U A D BUS B U FF E R Tha TC74AC125/126 ore advanced high speed CMOS QUAD BUS BUFFER« fabricated with silicon gate and d o uble-layer m etal w iring C'MOS technology.

ac274

Contextual Info: TC74AC563P/F/FW, TC74AC573P/F/FW O CTA L D - T Y P E L A T C H W ITH 3 -S T A T E OUTPUT TC74AC563P/F/FW IN V E R T IN G TC74ACS73P/F/FW N O N -IN V E R T IN G The TC74AC563 and TC74AC573 are advanced high speed CMOS OCTAL LATCH with 3-ST A T E OUTPUT fabricated with silicon gate and d o u b le -lay er m etal

Contextual Info: TC74AC86P/F/FN QUAD E X C L U SI V E OR GATE The TC74AC86 is an advanced high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate and do u ble-layer m etal w iring C2MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while m aintaining the

c138 diode st

Abstract: top 258 pn 74HC138
Contextual Info: TC74LVQ138F/FN/FS 3 -TO - 8 LINE DECODER The T C 74LV Q 138 is a high speed CM O S D ECO DER fabricated with silicon gate and double - lay er m etal w iring C 2MOS technology. D esigned for use in 3.3 Volt system s, it achieves high speed operation while m ain tain ing the CM OS low power dissipation.

NL252018T-101J

Abstract: NL322522T-100J NLC1812-180K NLC322522T-4R7M NL1812 NLC1210-470K NL252018T-R33J NLF453232T-101K NL252018T-027J nl252018t-047j
Contextual Info: INDUCTORS Leadless NL SERIES INDUCTORS These revolutionary, high reliability leadless w o u n d ch ip inductors have been developed in response to the tren d to w a rd higher density mounting o f p a r ts in electronic circuits. Since m etal term inals a re u sed a s the electrodes and the body is m olded o f h eat resistan t resin,

Contextual Info: S C44820/S C44821/S C44822 Single Chip microCMOS Microcontrollers SIERRA SEMICONDUCTOR The SC44820 is pin and function com patible w ith the COP820C microcontroller manufactured by National Semiconductor Corpora­ tion. It is fabricated using double­ m etal, silicon gate, fully static

Contextual Info: SIEMENS CMPNTSt OPTO 44E D B A23b32b OOOMbT? 2 B S IEX RM-85D Mask-Diffused GaAsP s|«t Monolithic LED W S IE M E N S FW- ? PART NO. 2680-0030 - P-etal anode Diffusion Barrier . Epitaxial Layer . Substrate . N-m etal (cathode)

ct4 dale

Abstract: MIL-R-22684 Dale Electronics
Contextual Info: MODEL CT M etal Film Resistors M ilita ry , M 1L-R-22684 Q ualified , Type RL and In d u strial Sem i-Precision FEATURES • Electroplated tin-lead solder finish leads • Semi-Precision resistors combine long-term stability with low inductance, low noise and low cost

mkb capacitor WIMA

Abstract: Polycarbonate capacitor WIMA MKB capacitor mkb3 MKB 3 WIMA MKB MKB wima wima 0.01 MF 63 V CAPACITOR wima .33 MF CAPACITOR
Contextual Info: WIMA MKB 3 WIMA MKB 5 etallized polycarbonate capacitors with axial leads M etallized polycarbonate capacitors with axial leads • For stringent requirements. ■ In cylindrical etal cases. ■ Available in insulated and non­ insulated models. ■ For stringent requirements. ■ Special design

lc 5013

Abstract: 2C5012 2C5013 2C5014 2C5015 LE50
Contextual Info: P P C PRODUCTS CORP 2 2( 12 »13 böSbm bOE » □DOQ'iSfl fl43 • PPC NPN High Voltage Low Power Transistor Chips 2C5014 2C5015 ~ r - 1*7-0 \ CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Base, Em itter M etallization: Alum inum • M etallization Thickness: 20,000 A Nom inal

MSM5298A

Abstract: MSM5298AGS l06S
Contextual Info: O K I Semiconductor MSM5298A 68-DOT COMM ON DRIVER GENERAL DESCRIPTION T he MSM 5298AGS is a d o t m atrix LCD com m on d riv e r LSI w h ich is fabricated by lo w p o w e r C M O S m etal gate technology. T his LSI co n sists of 6 8 -bit b id irectio n al shift register, 6 8 -bit level

as6 diode

Abstract: BYX96-300 diode as6 BYX96 BYX96-300R BYX96-300U
Contextual Info: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 7110ÔEb OD41bSS 1T3 ■ PHIN T ~ 0 - n RECTIFIER DIODES A ls o availab le to B S 9 3 3 1 - F 1 2 9 S ilic o n re ctifie r dio d es in m etal envelopes sim ila r to D O -4 , intended fo r use in p o w er rectifier

ic el 434

Abstract: MSM5299A MSM6255 QFP100-P-1420-K QFP100-P-1420-V1K
Contextual Info: O K I Sem icon d u cto r M SM 5299A 8O-DOT SEGMENT DRIVER G EN ER A L D ESCR IPTIO N T he M SM 5299A is a dot m atrix LC D segm ent d river LSI w hich is fabricated b y C M O S low pow er m etal gate technology. T his LSI con sists o f an 80-bit bid irectional shift register, 80-bit latch, 80b it level shifter and 80-bit 4-lev el driver.

TRANSISTOR WM 9

Abstract: BF749 UHF transistor GHz transistor wm
Contextual Info: Philjps_Semicondtgtore B l 711065b QObflbSfl 55^ HIN ^^Produc^pecification NPN 5 GHz wideband transistor FEA TU R ES BF749 e P IN N IN G PIN • High power gain • Low noise figure • Gold m etallization ensures excellent reliability. D E S C R IP T IO N

SL10100

Abstract: SL80
Contextual Info: O K I Semiconductor M S M 5 1 V 4 2 6 0 /S L _ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V4260/SL is a 262,144-word x 16-bit d ynam ic R A M fabricated in O K I's C M O S silicon gate technology. The M SM 51V4260/SL achieves high integration, high-speed operation, and lowpow er consum ption due to qu adruple polysilicon single m etal C M O S . The M SM 51V4260/SL is

q6000a

Abstract: 5502 power switching 74 series logic gate amcc, qc binary counters with D-flip flop MSI IC decoder synchronous counter using flip flip pga 180
Contextual Info: c Q >y 000975 D E V IC E SPECIFIC APPLIED MICRO CIRCUITS CORPORATION f f t m c Q6000A SERIES CMOS LOGIC ARRAYS FEATURES TECHNOLOGY Q 60 00A S eries arrays feature 1.8-m icron silico n -g a te CM O S with tw o-level m etalization, o fferin g high p e rfo rm a n ce and up to

C30971

Contextual Info: TS D-Sub connectors - Stamped and Formed Contacts ST R A IG H T P C B T ER M IN A T IO N O NE M ETAL S H E L L C O N N EC T O R S Specifications g —* • Connectors according to MIL C 24308 The one shell D-sub Amphenol series features, stamped and formed contacts.

Contextual Info: D Subminiature Combo D /European Version 40 A High power 90° - European footprint, size DD, with etal bracket Part numbers with m etal bracket and Part numbers with etal bracket with Part numbers with etal bracket captive nut M3 bushing diam . 3,0 5 with post M3

Contextual Info: A COMPANY OF MODEL CCF-07 M etal Film Resistors Industrial, 2% and 5% Tolerance FE A T U R E S • 1/4 watt at 70°C power rating • 2% and 5% tolerance • 100PPM/°C and 200PPM /°C tem perature coefficient • Tape and reel packaging for automatic insertion. Meets

DALE fp10

Contextual Info: A C O M PAN Y OF MODEL FP M etal Film Resistors Industrial, Flam eproof FE A T U R E S • • • • Small physical size Low cost Exceptional frequency characteristics FP resistors have the ability to withstand overloads up to 100 times rated power without any trace of flame

Contextual Info: Panasonic P la stic Film C a p a cito rs = E quipped w ith a S afety M echanism = M etallized P olyester/P olypropylene Film C apacitor Type ECHAX N o n -in d u c tiv e c o n s tru c tio n , F la m e -re ta rd a n t e p o x y resin d ip p e d enclosure • Features