BA48 Search Results

Contextual Info: BA482 BA483 BA484 002blbT T4fl W A P X bTE D J N AUER PHILIPS/DISCRETE V SILICON PLANAR DIODES Switching diodes in the subminiature DO-34 glass envelope, intended for band switching in v.h.f. television tuners. Special feature of the diodes is their low capacitance.

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

1n4148-phi

Abstract: 1n4148ph AAP153 BA479 BA482 BAS32 1N4148 minimelf 1N4148 1N4151 BAS216
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 nepeKnronaro^Me Kofl: m yHMBepcanbHbie BA479 BA482 1N4151 1N4148 1N4148-PHI 1N4448 1N914 V r » [B] 30 35 50 75 75 100 100 [A]“ 0,05 0,1 0,2 0,2 0,2 0,15 0,075 V f npw [B]

BA481

Abstract: mixer diode noise diode UHF mixer
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D050 BA481 UHF mixer diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification UHF mixer diode BA481 FEATURES DESCRIPTION • Low forward voltage

TDA2658

Abstract: semiconductors replacement guide sad1009 TDA*2658 tda4580 TDA3842 TDA3561A TDA4685 TDA9804 BA483
Contextual Info: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of IC02, but not in the current version: TYPE NUMBER REASON FOR DELETION 83CE654 Replaced by C654 type BA483 Discontinued

BA482

Abstract: BA483 BA484
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification Band-switching diodes

BA37

Abstract: ba49 BA144
Contextual Info: Package Diagrams Ball Grid Array Packages 36-Ball 7.00 mm x 8.5 mm x 1.5 mm Thin BGA BA37 51-85105-A 1 Package Diagrams 48-Ball (7.00 mm x 7.00 mm) FBGA BA48 51-85096-C 2 Package Diagrams 48-Ball (7.00 mm x 8.5 mm x 1.5 mm) Thin BGA BA49 51-85106-A 3 Package Diagrams

ba48

Contextual Info: Package Diagram Ball Grid Array Packages 48-Ball 7.00 mm x 7.00 mm Mini-BGA BA48 1

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

Rf Detectors

Abstract: "Rf Detectors" 900 mhz schottky diode BA481
Contextual Info: fc>3E T> _ m ^ 5 3 ^ 2 4 DG7MESE Dfc.7 « S i c a NAPC/PHILIPS SEMICOND f o b d e t a il e d BA481 _ i n f o r m a t i o n s e e t h e l a t e s t is s u e o f h a n d b o o k s c o i o r d a t a s h e e t U.H.F. MIXER DIODE S ilicon epitaxial S c h o ttky-b a rrie r diode In a DO -34 envelope and Intended fo r m ixe r applications in

Contextual Info: Package Diagram Ball Grid Array Packages 48-Ball 7.00 mm x 7.00 mm Mini-BGA BA48 51-85096-A 1

BA482

Abstract: BA483 BA484
Contextual Info: LTE D • BA482 BA483 BA484 IAPX □D2blbc] T4B N AMER PHILIPS/DISCRETE SILICON PLANAR DIODES S w itching diodes in th e su bm iniature D O -3 4 glass envelope, intended fo r band sw itching in v .h .f. television tuners. Special featu re o f th e diodes is th e ir low capacitance.

BA231

Abstract: RF diodes BA423L BA480 DIODE ED 34 BA423
Contextual Info: 47 RF/Microwave Devices RF Diodes cont. Schottky-Barrier Diodes Primarily intended for mixing applications. Type Package Outline Vr (mV) BA480 BA481 DO-34 DO-34 280 450 @ lF (mA) (ft) 1 1 15 13 *s @ ed (pF) and f I? (mA) (kHz) 1 1 5 5 Vr max V R max lF (V)

Contextual Info: Philips Semiconductors Short-form product specification UHF mixer diode APPLICATIONS BA481 QUICK REFERENCE DATA • M ixer applications in: - U H F tuners - Television modulators - R F detectors. SYMBOL PARAMETER CONDITIONS MAX. Vr 4 V If continuous forward current

BA482

Abstract: BA483 BA484 Ba482 diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Band-switching diodes Product specification

BA480

Abstract: BA231 BA423L 80T23 BA482 BA483 BA223 BA423 BA481 BA484
Contextual Info: PHI LIP S I N T E R N A T I O N A L 41E D H TllüöSb Q0E314Ö 1 BlPHIN T '0 7 -o ! SCHOTTKY-BARRIER DIODES Prim arily intended for mixing applications. vF @ iF type number mV (mA) BA480 BA481 280 450 1 1 cd @ v R (pF) (V) r, @ Ip and f (Q) (mA) (kHz) 15

mixer diode

Abstract: S0068 BA481 UHF mixer
Contextual Info: Product specification Philips Semiconductors BA481 UHF mixer diode FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 DO-34 glass package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.

BA482

Abstract: BA483 BA484
Contextual Info: b3E D m bbSB^SM □□7H2S3 TT3 n a p c /p h i l i p s BA482 BA483 BA484 ISIC3 seuicon FOR D E T A ILE D IN FO R M ATIO N SEE THE LATEST ISSUE OF HANDBO OK SC01 OR DATASHEET SILICON PLANAR DIODES S w itch in g diodes in th e su b m in ia tu re DO -34 glass envelope, intended fo r band sw itching in v.h .f.

BA482

Abstract: LF 306-S BA483 BA484 S0068 PHilips diode ba
Contextual Info: Product specification Philips Semiconductors Band-switching diodes BA482; BA483; BA484 FEATURES DESCRIPTION • Continuous reverse voltage: max. 35 V Planar high performance band-switching diode in a hermetically sealed glass SOD68 DO-34 package. • Continuous forward current:

ba36

Abstract: BA37
Contextual Info: Package Diagrams Ball Grid Array Packages 36-Ball Thin BGA BA36 51-85099-B 1 Package Diagrams 36-Ball 7.00 mm x 8.5 mm x 1.1 mm Thin BGA BA37 51-85105-B 2 Package Diagrams 48-Ball (8.0 x 14.0 x 1.1 mm) Thin BGA BA47 51-85121 3 Package Diagrams 48-Ball (7.00 mm x 7.00 mm) FBGA BA48

BA482

Abstract: BA483 BA484 Philips DATA Handbook system MAM156
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification Band-switching diodes

BA482

Abstract: BA483 BA484
Contextual Info: Short-form product specification Philips Semiconductors BA482; BA483; BA484 Silicon planar diodes QUICK REFERENCE DATA FEATURES • Low diode capacitance. SYMBOL Vr APPLICATIONS • Intended for band switching in VHF television tuners. If cd TYP. MAX. UNIT

BAT543

Abstract: BAT744 BAS70-07
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes SCHOTTKY-BARRIER DIODES OVERVIEW surface-mount VR lF trr leaded max. max. max. DO-34 V (mA) (ns) 4 30 - BA481 4 30 - - 4 30 - -

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)