BA27 Search Results

diode smd ED 74

Abstract: diode smd ED 84 diode smd ed 68 st smd diode marking code DE BA277 "MARKING CODE M2" BA277-01 BP317 SOD723A smd marking code diode ME
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA277-01 Band-switching diode Preliminary specification 2001 Sep 07 Philips Semiconductors Preliminary specification Band-switching diode BA277-01 PINNING FEATURES • Small plastic SMD package PIN DESCRIPTION • Continuous reverse voltage: max. 35 V

diode smd ED 68

Abstract: diode smd ED 74 diode smd ED 84 sc793 BA278 BP317 diode smd marking ed diode ED 84 smd 816
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V

str 6707

Abstract: s4 69 diode smd BA277 DIODE S4 66 MCC SMD DIODE smd diode 6F diode 81 bp diode marking code 777 BA277,115 DIODE smd marking pl
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA277 Band-switching diode Product specification 1998 May 06 Philips Semiconductors Product specification Band-switching diode BA277 PINNING FEATURES • Small plastic SMD package PIN 
• Continuous reverse voltage: max. 35 V

BA277

Abstract: BA277-01 marking a sod723 smd diode sod723
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D749 BA277-01 Band-switching diode Product specification Supersedes data of 2001 Sep 07 2002 Oct 29 Philips Semiconductors Product specification Band-switching diode BA277-01 FEATURES PINNING • Small plastic SMD package

ba278

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V

BU2701

Contextual Info: BU2701F/BA2705AF VTR ffl IC/ICs for VTR Applications ROHM CORP 07E D I D D D S lflS B U 2 7 0 1 F 7 “- 7 7 -V 7 SSG for Color TV Cameras B U 2 7 0 5 Â F ? g ’ i ’f-JfirfjilSil/'Dimensions Unit : mm B U 2 7 0 1 F /B U 2 7 0 5 A F , P A L / S E C A M ;^ * 7 - * * 7

Contextual Info: Product specification KA277 BA277 SOD-523 +0.05 0.3-0.05 Features Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Small plastic SMD package Continuous reverse voltage: max. 35 V + +0.1 0.6-0.1 - Continuous forward current: max. 100 mA +0.1 1.6-0.1 Low diode capacitance: max. 1.2 pF

Contextual Info: BA277 Band-switching diode Rev. 02 — 7 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

smd diode JS

Abstract: BA277 diode smd diode marking 85 smd marking 35 smd marking rd smd marking js KA277
Contextual Info: Diodes SMD Type Band-Switching Diode KA277 BA277 SOD-523 +0.05 0.3-0.05 Features Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Small plastic SMD package Continuous reverse voltage: max. 35 V + +0.1 0.6-0.1 - Continuous forward current: max. 100 mA +0.1 1.6-0.1 Low diode capacitance: max. 1.2 pF

BA277

Contextual Info: BA277 Band-switching diode Rev. 02 — 7 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

AH40

Abstract: AW33 AA41 BC35 EPF8050M
Contextual Info: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

RTV 105

Abstract: R5S72060W200FPV SH7206 AN7110 Nippon capacitors 8 905 958 460
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

transistor bl p89

Abstract: bl p74 transistor J955 XC4000 XC4000A XC4000D XC4000E XC4000EX XC4000H p180 g8
Contextual Info: book XC4000E and XC4000X Series Field Programmable Gate Arrays R January 29, 1999 Version 1.5 6* XC4000E and XC4000X Series Features Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series. XC4000X Series devices described in this data sheet

a19t

Abstract: ba1s 000IH
Contextual Info: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

MD 202

Abstract: TMDB HD6417021 HD6437020 HD6437021 HD6477021 SH7000 SH7020 SH7021 h500
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

P-TFBGA63-0911-0

Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Contextual Info: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

mvb bus schematics

Abstract: mc88000 DSP56001 users manual IC 7492 real time application and product for fir 32 bit carry select adder code 74 hc 589 DSP96002 fft D1 PGA 478 DSP96002
Contextual Info: DSP96002 32-BIT DIGITAL SIGNAL PROCESSOR USER’S MANUAL Motorola, Inc. Semiconductor Products Sector DSP Division 6501 William Cannon Drive, West Austin, Texas 78735-8598 SECTION 1 DSP96002 INTRODUCTION This manual describes the first member of a family of dual-port IEEE floating point programmable CMOS

Contextual Info: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory