BA 1ST YEAR Search Results

marking BA

Abstract: transistor mark BA ba 2nd year PG05BAUSM
Contextual Info: SEMICONDUCTOR PG05BAUSM MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking BA 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA PG05BAUSM hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

ba 2nd years

Abstract: transistor mark BA KRX101E marking BA
Contextual Info: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

ba 2nd years

Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
Contextual Info: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

ba 2nd years

Abstract: KRX201E marking BA
Contextual Info: SEMICONDUCTOR KRX201E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

transistor mark BA

Abstract: KRX201U ba 2nd years
Contextual Info: SEMICONDUCTOR KRX201U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

transistor mark BA

Abstract: KTC9011S ktc90
Contextual Info: SEMICONDUCTOR KTC9011S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BAF 2 1 Item Marking Description Device Mark BA KTC9011S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

CST4.00MGW

Abstract: CSAC4.00MGC SABC504-2EM CB CST4.00MGW040 CSA4.00MG SAK-C505 c166 development AP2424 Specification Quartz Crystals 8Mhz SAB-C504-2EM
Contextual Info: Microcontrollers ApNote AP242401 Ceramic Resonator Oscillators and the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the ceramic resonator oscillator functionality and gives

SAB-C504-2EM

Abstract: SAF-C509-LM SAB80C517A-N18-T3 SAB80C517A-N18 SABC504-2EM CB CSAC4.00MGC CSACV24 CST4.00MGW SAB80C537 CST16.00MXW040
Contextual Info: Microcontrollers ApNote AP242401 Ceramic Resonator Oscillators and the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the ceramic resonator oscillator functionality and gives

Contextual Info: v IP Network Server NSC2U v Front and Rear I/O flexibility, with up to 8 x Gb NICs in front v Short depth, ruggedized 2U chassis v “Appliance” look and feel v Long life support 3 years v Dual, redundant AC or DC power option v Hardware RAID option v Industry-leading performance/watt

F222

Contextual Info: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

AXLE20

Contextual Info: Issue: 03 Specification AXLE20 Oscillator type : TCXO Parameter min. Frequency range Standard frequencies Frequency stability Initial tolerance vs. temperature in operating temperature range steady state vs. supply voltage variation vs. load change long term (aging) per year

SLC NAND endurance 100k years

Abstract: 802AH
Contextual Info: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

Contextual Info: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date RD 3-19-13 BA 3-19-13 TITLE: Ceramic Crystal Oscillator PART #: B 3-2013

Flash MCp nand DRAM 107-ball

Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
Contextual Info: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

SAMSUNG MCP

Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
Contextual Info: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Samsung MCP

Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
Contextual Info: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM

K5D1258

Abstract: k5d12 SAMSUNG MCP
Contextual Info: Target MCP MEMORY K5D1258KCM-D075 Document Title Multi-Chip Package MEMORY 512M Bit 64Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date Initial issue. - 512Mb NAND B-Die_ Ver 0.1 - 256Mb Mobile SDRAM F-Die_Ver 1.1 March 10, 2005

Contextual Info: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN ISO 9001 FM 75597 Originator Date Engineering Date RD 3-19-13 BA 3-19-13 D 3-2013 All Added Screening Requirement

63FBGA

Abstract: KFG1216U2B 67-ball samsung "NOR Flash" 512MB
Contextual Info: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

KFG1216U2B

Abstract: OneNAND 63FBGA Flash Memory SAMSUNG OneNAND
Contextual Info: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

ctb-34

Abstract: rb60 51 MARKING V1J fmlg12 333X ES01 ES01A ES01F ES01Z EU02
Contextual Info: •1 3SE D SANKEN ELECTRIC CO LTD Fast Recovery Diodes E 3 7 ^ 0 7 4 1 GOOGÖDS 0 E 3SAKJ7^ 03" û I eVrh: 100~ 1500V Eio:0.5~ i.2A RH/ES/RS/RH/RU/EU V rm V Io Ifsm (A) (A) 450 650 850 250 450 650 1550 250 450 650 1600 650 850 — Ir |R(H) trr (M ) (//A )

qualcomm nand

Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
Contextual Info: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

MCP 67 MV- A2

Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
Contextual Info: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

63FBGA

Abstract: KFG5616D1M-DEB KFG5616Q1M KFG5616Q1M-DEB KFG5616U1M-DIB 8017h
Contextual Info: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)