B91 02 Search Results

D1762

Abstract: D892
Contextual Info: 5 !!4 1 9B414 9C4E396 A62 AE3C4A26 12 3%2#-52*"5 2*!/6,245!22F92 62 12 5!22BD278272 2+2$52 12 $ %652*&+$29%2: !"2219;2+2: 5 62 ."662# 2<52

2A92

Abstract: 8C636 transistor+2a92
Contextual Info: D'$#6 D93A966#$6%E&62EF%9649FEF6 '3C 2389366 9C4E396 12 12 12 12 88 8 8 8 8 8 8 8 8 8 8 8 8  123456789A2BC88 DEF875B6785CA8 8AB8176AB538 5578AB85788778 6CB!C"96 43424 143AB65 43474 1936A5 43974 123D95 43424 143AB65

3d09

Contextual Info: 1 1223456789ABC7832DE8F3 9 1 234456611 789AB9BCDABEEFA9 12324567734 9  12324567734 789AB9BCDABEEFA1 1 1111111894AB4CDAEF3A47D9A49

B91-02

Abstract: B9102 b91 02 ERB91-02
Contextual Info: ERB91-02 1.0A LOW LOSS SUPER HIGH SPEED RECTIFIER (200V / 1.0A ) Outline drawings, mm ø3.0 ø0.8 5.0 25 MIN. 25 MIN. Features Marking Low VF Super high speed switching Color code : Silver High reliability by planer design Voltage class Lot No. High speed switching

PAD61

Abstract: CAP0805 GND12 PAD35 GND-10 5v1 ct led par64 74LVC04 PAD49 ad09
Contextual Info: A B C D E F G H 1 1 2 2 PCI {02,03,04,05} +5V +5V +3V 5V {02,03,04} +3V 5V {02,03,04} +3V +3V +3V +3V 3 3 PCI BUS0 +12V CONNPCI_64 3.3V B1 PTCK B2 B3 B4 B5 B6 4 INTB# {02,03,05} B9 C9 1 TDO +5V3 +5V4 B11 PRSNT1 PAD17 B32 PC/BE2# B33 PTMS B34 PTDI PIRDY# B35

Contextual Info: 1 111111111111 11111 1 111111111111 1 111111111111 1 111111111111 1 1 5123456789A185BCDCEFC5FB5555555 5 55555555 5 55555555 5 55555 5 5 C5E 123314567891A758BCD814E1F3D167D1F1C5A36 3CD55CCC59 88 F!"#$%&59 885' *75(B51EE5"#$5CCDCB

Contextual Info: BC237S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTE0NICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package: SOT-23 ABSOLUTE MAXIMUM RATINGS a t Tan*=25*C Symbol Rating Characteristic Collector-Emitter Voltage Colfector-Eoatter Voltage

01E0

Contextual Info: REVISION RECDRD REV 20.54 A ECO DESCRIPTION m m DR FT JACK ET 6/21 S W 2.5 2.54 1.2 10.5 NOTES: ELECTRICAL: 1. VOLTAGE RATING 2. CURRENT RATING 3. CONTACT RESISTANCE 4. INSULATION RESISTANCE: 5. DIELECTRIC STRENGTH : MECHANICAL: 1 . HOUSING MATERIAL 2. CONTACT MATERIAL

AS85049/77

Contextual Info: CONNECTOR DESIGNATOR: F AS85049 AS85049/77 45° EMI/RFI Environmental Backshell N = Electroless Nickel W = 1,000 Hr. Cadmium Olive Drab over Electroless Nickel MIL-DTL-38999 Series I and II Finish X = Aluminum, Nickel Flurocarbon Polymer Z = Aluminum, Zinc-Nickel, Black

HKF-11

Abstract: auxiliary contact SK11 HKF-20 HK11 1SAM HK-11 ABB SK-11 ABB HKF-11 shunt R0002 PA25
Contextual Info: Manual Motor Starters MS 325 / MS 225 Accessories Ordering details Retrofittable accessories These parts can be procured in addition to the MS 325 resp. MS 225; they must be installed by the user. Setting range Order code 63-00 Type Weight/ Packing Price piece

60947-2 MAX EARTH LOOP IMPEDANCE

Abstract: S2C-H10 ABB STOTZ - S 212 M 59371 s201h S2C-A1 stotz s 212 transistor r1009 IEC 60947-2 ABB S200M
Contextual Info: Technical Data System pro M System pro M compact Miniature Circuit-Breakers for Railway Applications Railway application prEN 45545-1 Level HL4 220/440 V DC 230/400 V AC 60 V DC 230/400 V AC 1. Fire Resistance Miniature circuit-breakers of the S 200 P and S 280 UC series,

SF200AA20

Contextual Info: M O S F E T M O D U LE SF200AA20 ULIE76102 M S F 2 0 0 A A 2 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 2 0 0 A A 2 0 enable you to control high power with compact package. • lo = 200A, VDss= 200V

EE5555

Abstract: 42C4256
Contextual Info: 12341567689A58BC4DE5 1 1 6F115E21125EBFC4555EED5B5B 5 5552 2 2 2 2 2 2 2 2 2 2 2 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 / 342 4672 6F72 542 044 2 62 62 /52 52 44C42 46F42

Contextual Info: 2DI50M-050 5 oa I /< 7 : Outl i ne Drawings POWER TRANSISTER MODULE • Features • jfiifthFE High DC Current Gain • High Speed Switching I Applications 9 General Purpose Inverter • Uninterruptible Power Supply • N C lfED tttt • Servo & Spindle Drive for NC Machine Tools

ZENER B18

Abstract: b18 zener
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

kvr800x18

Contextual Info: Module Specification Direct Rambus RIMM™ Modules 512MB, 256M x 18-Bit w/ECC, 800MHz Based on 288 Megabit RDRAM Components DESCRIPTION This document describes the ValueRAM™ by Kingston 256M x 18-Bit (512MB w/ECC) Direct Rambus™ RIMM™ Modules. The components on these modules include sixteen 288Mb Direct Rambus DRAM (Direct RDRAM™). Direct RDRAM devices

SP1002-02JTG

Abstract: sc70-5 k1 IEC61000-4-4 SC70-5 SP1002 SP1002-01JTG marking package 5. sc70
Contextual Info: SPA Silicon Protection Array Products Bidirectional ESD Protection Array Pb RoHS HF GREEN SP1002 Lead-Free/Green Series Description Back-to-Back Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that

BZX55

Abstract: BZX55-B82 ZENER B18 zener b27 BZX 3,3 B2V7 BZX55-B15 BZX55B Zener B12 b2v4
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

8 bit binary to 7 segment

Abstract: SN7483N DM7448N DM7490N dm74107n 7447 an 7447 pin out DM7427N 7447 7447 function table
Contextual Info: National Sem iconductor -¡A C o r i o e I t O B IIU S TTI • I L. REFERENCE T A B L E C ode Sem iconductors Integrated Circuits - Digital TTL See o u tlin e d ra w in g s Nos. 109,111 o r 114 {as applicable fo r 14 p in , IS p in package etc. f 0 r p h ysicai dim e n sio n s.

MARKING CODE B82

Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0

30DL2

Abstract: B92 RECTIFIER
Contextual Info: SS INTERNATIONAL RECTIFIER DË^I 4 Û 5 5 4 S 2 0 0 0 4 TÛ 1 1 55C 04981 4855452 ÌNT ER N Â T 1 0 N Ä L REC T I F I E R Data Sheet No. PD-2.069B T-ot~l3 INTERNATIONAL RECTIFIER I R 1ÜDLAND 30D L SERIES 1 Amp and 3 Amp Fast Recovery Rectifiers Major Ratings and Characteristics

bzx55 024

Abstract: zener b27 ZENER B18 b16 zener BZX55 bzx b27 b2v4 b5v6 diode zener B16 BZX55B
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

2DI50M-050

Abstract: transister A40A M208 S30S3 T151 DIODE B91 DIODE B89
Contextual Info: 2DI50M -050 5 oa I /< 7 : Outline Drawings POWER TRA N SISTER MODULE •Features • jfiifthFE High DC Current Gain • High Speed Switching I Applications 9 General Purpose Inverter • Uninterruptible Power Supply • N C lfED tttt • Servo & Spindle Drive for NC Machine Tools

a80 marking code

Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V