B72M24G Search Results
B72M24G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MSL912
Abstract: 44B4 18-P-300 Vacuum Fluorescent Display OKI CONFIGURATION oki Vacuum Fluorescent Display
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b72m2400q144h2msl91218-pin+8 | |
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Contextual Info: O K I SEMICONDUCTOR GROUP 23E D Hi b72M24G 0DD7TTÔ 1 • DESCRIPTION OKI OL350A-4 is a 1.3/im high power laser diode DIP module with single mode fiber pigtail. Using excellent performance VIPS V-grooved Innerstripe on P-substrate LD, single mode fiber output |
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b72m24gol350a-4100mab724240 | |
DS20
Abstract: msc23236c
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msc23236c/cl-xxbs20/ps20152-word36-bitmsc23236c/cl-xxbs20/ds20+4 | |
FML G02
Abstract: m7555 VOICE SCRAMBLER jrc 317 tve mos 317 jrc compandor FT50 gto 2400-1.0 MSM7555GS-2K
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msm755500222bflfml g02m7555+8 | |
2D76Contextual Info: O K I Semiconductor MSC23C132C/CL-XXBS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE D E SC R IP T IO N The OKI MSC23C132C/CL-xxBS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access M emory M odule com posed of eight 4-Mb DRAMs 1M x 4 in TSOP packages |
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msc23c132c/c576-word32-bitmsc23c132c/cl-xxbs8+3 | |
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Contextual Info: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology. |
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4402a/al_576-wordmsm514402a/al576-w+4 | |
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Contextual Info: O K I Semiconductor MSC23240B/BL-XXBS20/DS20 2,097,152-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23240B / BL-xxBS20 /D S 2 0 is a fully decoded 2,097,152-w ord x 40-bit CM OS Dynamic Ran dom Access M em ory M odule com posed of twenty 4-M b DRAM s in SOJ M SM 514400B/BL packages |
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msc23240b/bl-xxbs20/ds20152-word40-bitmsc23240b+4 | |
514100AContextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated |
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msm6691themsm6388andthemsm6588themsm6691+6 | |
1X3 diode
Abstract: ucf 9a OCM142 OCM102 Photo MOS Relay CM103 OCM103 OCM112 OCM122 OCM123
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10-mab724z4dl7242401x3 diode+9 | |
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Contextual Info: O K I Semiconductor MSM51V17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17800 achieves high integration, high-speed operation, and low-power |
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msm51v17800152-word28-pincycles/32 | |
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Contextual Info: O K I Semiconductor M S M 6652-X X X /M S M 6653-X X X / M S M 6654-X X X /M S M 6655-X X X / M SM 6656-XXX_ Internal MASK ROM Speech Synthesis LSI GENERAL DESCRIPTION The M SM 6650 fam ily is a su ccesso r to the M SM 6375 fam ily that are speech synthesis LSIs w ith |
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6652-x6653-x6654-x6655-x+6 | |
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Contextual Info: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology. |
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msm51v17100216-word51v17100216-w+2 | |
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Contextual Info: O K I Semiconductor MSC23S136B/BL-XXBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23S136B/BL -xxBS12/D S12 is a fully decoded 1,048,576-word x 36-bit CM OS dynamic Ran dom Access Memory module com posed of eight 4-Mb DRAMs in SOJ M SM 514400B/BL packages and |
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msc23s136b/bl-xxbs12/ds12576-word36-bitmsm514400b/bl+2 | |
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Contextual Info: O K I Semiconductor MSC23108B/BL-XXDS2 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23108B /B L -xxD S2 is a fully decoded 1,048,576-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of two 4-Mb DRAM s in SOJ M SM 514400B/BL packages mounted |
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msc23108b/bl-xxds2576-wordmsc23108bmsm514400b/bl+1 | |
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Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and |
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msm56v16400152-wordcycles/64dd2d377 | |
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Contextual Info: O K I Semiconductor MSC23136C/CL-xxBS10/DS10 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23136C/CL-xxBSl 0/DS10 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in SOJ |
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msc23136c/cl-xxbs10/ds10576-word36-bitmsc23136c/cl-xxbsl+2 | |
ZIP40-P-475Contextual Info: O K I Semiconductor MSM5 14170 A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514170A/ASLachieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514170A/ASL is |
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msm514170a/asl144-word16-bitmsm514170a/aslachieves+2 | |
MSM6388
Abstract: MSM6586 MSM6588 474 3.5v vo
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msm6586_144-wordmsm6586msm6586s+4 | |
kyl 1020
Abstract: Darlington transister A4709A 1l400 MSA4709ASS MSA4709 darlington tip pnp transister symbol AL24 MSA4709A
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msa4709a30-pin2sb10612sd1502+12 | |
MSM6295
Abstract: QFP44-P-910-V1K AR76
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msm6295_msm6295242mqa0-a15+3 | |
MSM7523GS-VK
Abstract: MSM7523RS LJ72 1750 Hz TONE
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msm7523-msm6888b-tj72mem000221lie+4 | |
M7540L
Abstract: MSM7540L MSM7560L
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msm7540l/msm7560l7540l/7560lmsm7540l/7560l+3 | |
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Contextual Info: O K I Semiconductor MSC23B21-XXBS4/PS4 524,288-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23B21-xxBS4/DS4 is a fully decoded 524,288-word x 36-bit CMOS Dynamic Random Access Memory Module composed of four 4-Mb DRAMs 256K x 18 in SOJ packages |
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msc23b21-xxbs4/ps4288-word36-bitmsc23b21-xxbs4/ds4+2 | |
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Contextual Info: O K I Semiconductor MSM514102A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE D ESCRIPTIO N The M SM 514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the M SM 514102A/AL is OKI's CMOS silicon gate process technology. |
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msm514102a/al304-word14102a/al194304-w+2 | |