4AE11 Search Results

Contextual Info: 4AE11 Silicon NPN/PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline 4AE11 Absolute Maximum Ratings for each device, Ta = 25 °C Ratings Item Symbol NPN PNP Unit Collector to base voltage ^C B O 300 -3 0 0 V Collector to em itter voltage

Contextual Info: 4AE11 Silicon NPN/PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline 4AE11 Absolute Maximum Ratings for each device, Ta = 25°C Ratings Item Symbol NPN PNP Unit C ollector to base voltage ^C B O 300 -3 0 0 V C ollector to em itter voltage

4AE11

Contextual Info: 4AE11 Unit: mm 31.3 +0.2 –0.3 24.4 ± 0.1 16.4 ± 0.3 5.0 ± 0.2 2.0 ± 0.1 3.2 3.0 3.8 12 1 16.0 ± 0.3 10.5 ± 0.5 2.7 10.0 ± 0.3 φ 3.2 1.15 2.54 1.4 1 Pin No. 2 1 3 2 4 0.85 ± 0.1 5 3 6 4 7 8 5 2.2 ± 0.2 1.0 9 0.55 +0.1 –0.06 10 11 12 6 7 8 9 10

4AE11

Abstract: Hitachi DSA001650
Contextual Info: 4AE11 Silicon NPN/PNP Triple Diffused Application Low frequency power amplifier Outline SP-12 2 1 4 5 NPN 1 PNP 3 9 8 6 11 12 12 1, 5, 8, 12 2, 4, 9, 11 3, 6, 7, 10 Base Collector Emitter NPN 7 PNP 10 4AE11 Absolute Maximum Ratings for each device, Ta = 25°C

Contextual Info: 4AE11 Silicon NPN/PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline 4AE11 Absolute Maximum Ratings for each device, Ta = 25 °C Ratings Item Symbol NPN PNP Unit C o lle cto r to base vo lta g e ^G B O 300 -3 0 0 V -3 0 0 V C o lle cto r to e m itte r vo lta g e

5001Q

Contextual Info: H ITACHI 4AE11 Silicon NPN/PNP Triple Diffused Low Frequency Power Amplifier Absolute M axim um Ratings f o r e a c h d e v i c e , T< » = 2 5 ° C Rating Item Symbol NPN PNP Un Collector to base voltage VCBO 300 -300 V Collector to emitter voltage VCEQ

KY2 transistor

Abstract: transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55
Contextual Info: O K I Semiconductor MSA4709A Subscriber Line interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformet circuit. FEATURES • B Battery feed , S (Supervision), and H (Hybrid) functions integrated on chip.

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

kyl 1020

Abstract: Darlington transister A4709A 1l400 MSA4709ASS MSA4709 darlington tip pnp transister symbol AL24 MSA4709A
Contextual Info: O K I Semiconductor MSA4709A Subscriber Line Interface Circuit G EN ER A L DESCRIPTIO N The MSA4709A is designed to pro v id e BSH functions a n d to m eet PABX transm ission perform ance requirem ents. T his device can replace the h y b rid tran sfo rm et circuit.