B724E4 Search Results

mx232

Abstract: YS2 100 a 741 j
Contextual Info: 4bE D • b724E4Q HOKIJ O K I semiconductor MSC2328A-XX YS2/KS2 T - 262,144 BY 8 BIT DYNAMIC RAM MODULE O K I SEMI CONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2328A-XX YS2/KS2 is a fully decoded, 262,144 w o rd sx8 bit CMOS dynamic random access memory composed of two 1Mb DRAMs in SOJ MSM514256AJS . The mounting of two SOJs

tone Dialer

Abstract: DD221 MSM6234 MSM6234RS VMSM6234RS
Contextual Info: O K I Semiconductor MSM6234 DTMF Tone Dialer LSI GENERAL DESCRIPTION TheMSM6234 is a tone dialer LSI which is fabricated by Oki's low power consumption CMOS silicon gate technology. TheMSM6234can generate 16DTMF Dual Tone Multi Frequency signals which consists of 4 higher

MSM7581

Abstract: PAD10 PAD31 NC-641 M7581
Contextual Info: O K I Semiconductor MSM7581_ ITU-T G.721 4ch ADPCM TRANSCODER G E N E R A L D ESC R IP T IO N The MSM7581 is an A D PC M tran sc o d er w h ich is u se d b y th e n ew dig ital cordless system . It converts 64 k b p s voice PCM serial d a ta to 32 k b p s ITU-T G.721 A D PC M serial d ata, a n d vice

optical switch 2x1

Abstract: cd photo diode ocm240 Photo MOS Relay OCM200 OCM201 OCM220 OCM221 OCM241 201 photo
Contextual Info: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

ic el 434

Abstract: MSM5299A MSM6255 QFP100-P-1420-K QFP100-P-1420-V1K
Contextual Info: O K I Sem icon d u cto r M SM 5299A 8O-DOT SEGMENT DRIVER G EN ER A L D ESCR IPTIO N T he M SM 5299A is a dot m atrix LC D segm ent d river LSI w hich is fabricated b y C M O S low pow er m etal gate technology. T his LSI con sists o f an 80-bit bid irectional shift register, 80-bit latch, 80b it level shifter and 80-bit 4-lev el driver.

MSM7540

Abstract: MSM7560
Contextual Info: O K I Semiconductor M SM 7540/7560 Single Rail ADPCM CODEC GENERAL DESCRIPTION The MSM7540 /7560 are single ch an n el A DPCM COD EC ICs w h ich p erfo rm m u tu a l tran sco d in g b etw een an alo g voice b a n d signal a n d 32 k b p s A DPCM serial data.

MSM5117400

Contextual Info: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.

MSM5116400C

Contextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

active suspension

Abstract: m56v16 m56v1640010
Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

Contextual Info: O K I Semiconductor MSM27C401AZB 524,288-Word x 8-Bit One Time PROM DESCRIPTION word^x^bü^Th^MSM27C401^A7RCtriCa^l^ Pr0Srami" able Read-Only Memory organized as 524,288 the B ? PerateS,°n 3 Slngle 5 V P °wer suPP]y ^ d is TTL compatible. Since a synchronously, external clocks are not required, making the MSM27-

LMN 317

Abstract: BT 1610 digital volume control lg crt tv circuit diagram MSM6895 MSM6896 phenom 1090
Contextual Info: O K I Semiconductor MSM6895/6896 M u lti-F u n ctio n P C M C O D E C G E N E R A L D ESC R IP T IO N The MSM6895/MSM6896, developed especially for low -pow er an d m ulti-function applications in ISDN telephone term inals, are single +5 V pow er supply CODEC LSI devices. The devices

bi-directional switches FET

Abstract: til 431 ocm240 OCM200 OCM201 OCM220 OCM221 OCM241
Contextual Info: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay G EN ER A L D E S C R IP T IO N The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

256kx16 ucas zip

Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance

Contextual Info: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S

Contextual Info: O K I electronic components OCM 4X8 SERIES Dual-Channel, Bidirectional Optical M O S Relay with Tw o Channels GENERAL DESCRIPTION The OCM4X8 Series are dual-channel, bidirectional AC optical MOS relays. The device is available in the same form factor as single-channel devices, with 8-pin DIP and F-type (gull w ing) package.

D015

Abstract: MSC2328B-10YS2 MSC2328B-60YS2 MSC2328B-70YS2 MSC2328B-80YS2
Contextual Info: O K I Semiconductor MSC2328B-XXYS2 262,144-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2328B-xxYS2 is a fully decoded 262/144-word x 8-bit CM OS Dynamic Random Access M em­ ory Module composed of two 1-Mb DRAMs in SOJ M SM514256B packages mounted with two 0.2 |iF

MSM6351

Abstract: QFP100-P-1420-K SEG60 hz-02 IRQP20 OKI msm6351
Contextual Info: 5ÔE D • b ? 2 4 2 4 G Q D 1 3 b ? E 044 « O K I J OKI semiconductor \-^9-13-^4 MSM6351 O K I S E M I C O N D U C T O R GROUP CMOS 4-BIT HIGH PERFORMANCE AND VERY LOW POWER SINGLE CHIP MICROCONTROLLER WITH LCD DRIVER GENERAL DESCRIPTION O K I’s M S M 6 3 5 1 is a low -pow er, h ig h -p erfo rm an ce sin gle-ch ip m icrocontroller em ploying silicon

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

m6376

Abstract: oki m6376 msm6376 J3E diode oki msm6376 oki voice synthesizer msm6375 diode i0-i6 7b424 oscV16 ADPCM SPEECH SYNTHESIZER LSIs
Contextual Info: O K I Semiconductor MSM6376_ A D P C M S P EE C H S Y N TH E S IZE R W ITH EXTERNAL R O M G ENER AL D ES C R IP TIO N MSM6376 is a tw o-channel m ixing ADPCM speech synthesizer LSI using u p to 16 M-bit external speech data storage, such as ROM,

Contextual Info: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power

Contextual Info: O K M S M I S e m iœ n d u c to r 6 4 1 6 4 C 4-Bit, Single-Chip Microcontroller DESCRIPTION The MSM64164C is a high-performance CMOS 4-bit, single-chip microcontroller that has a built-in 256nibble RAM, 20 I/O ports, a buzzer output, a serial port, a 2-channel RC oscillation type A /D converter,

ms1250

Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
Contextual Info: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith

Contextual Info: O K I Semiconductor MSM538002C 524,288-W ord x 16-Bit o r 1,048,576-W ord x 8-Bit M a sk R O M DESCRIPTION The OKI MSM538002C is a high-speed CMOS Mask ROM that can electrically switch between 524,288word x 16-bit and 1,048,576-word x 8-bit configurations. The MSM538002C operates on a single 5.0 V

Contextual Info: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.