B44 TRANSISTOR Search Results

marking 68g

Abstract: B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: 23Ô33T4 b44 if II BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS A LL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration

BCW67A

Contextual Info: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38

stk audio power amplifiers

Abstract: D556 stk 80 w
Contextual Info: TTETSa? rZ J m 7# DD 4L .0 47 b44 • SGTH S G S -T H O M S O N [ » ^ » [IC T IiM O Û S STK 4 N3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N30L . ■ . . ■ V dss RDS(on Id 300 V < 1 .4 Q 4 .2 A TYPICAL RDS(on) = 1.25 Q AVALANCHE RUGGED TECHNOLOGY

IFN5114

Abstract: IFN5115 IFN5116 B44 transistor PJ99 SMP5114 SMP5115 SMP5116
Contextual Info: Databook.fxp 1/14/99 12:22 PM Page B-44 B-44 01/99 IFN5114, IFN5115, IFN5116 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

IS-98-A

Abstract: UCSP4 marking B44
Contextual Info: 19-2015; Rev 6; 9/06 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

CJ1H-CPU65H

Abstract: CJ1G-CPU42H CJ1G-CPU45H CJ1M-CPU22 CJ1G-CPU43H CJ1M-CPU12 CJ1W-IC101 CJ1G-CPU44H CJ1M-CPU13 cj1w-oc211
Contextual Info: CJ1 SERIES Contents Smallest, Most Powerful Solution for Tomorrow’s Advanced Production Systems We shrank our most powerful programmable controller by 40% to fit industry’s most space-confined cabinets. All of Omron’s outstanding performance was retained in the process: That includes the mix of standard and special I/O

transistor B42

Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

if3601

Contextual Info: B 34 9-97 IF3601 N -C H A N N E L SILICO N JUNCTIO N FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings = TA at 25"C Reverse Gate Source Voltage & Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation

Contextual Info: CSA1220, CSA1220A CSA1220,1220A PNP PLASTIC POWER TRANSISTORS Complementary CSC2690, 2690A Audio frequency and High frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. "V A 7 .4 7.8 P u B 10.5 10.8 C 2.4 D 0.7 2.7 0.9

Contextual Info: TRANSISTOR MODULES QCA200BA60 UL;E76102 M) is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the

B44 transistor

Abstract: fet IRF840 TRANSISTOR mosfet IRF840 mosfet b44
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TMOS Power FET is designed fo r high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

transistor c 5855

Abstract: TRANSISTOR LIST 417 TRANSISTOR npn epitaxial planar high voltage transistor epitaxial B44 transistor use of 417 TRANSISTOR
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and

transistor c 5855

Abstract: npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C

transistor 2TH

Contextual Info: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)

B34 transistor

Abstract: 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R32C
Contextual Info: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum

Xr 1075

Abstract: BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320
Contextual Info: Philips Semiconductors FEATURES Product specification PINNING • High power gain PIN • Low noise figure DESCRIPTION BFG92A Fig.1 Code: P8 • Gold metallization ensures excellent reliability. DESCRIPTION The BFG92 is a silicon NPN transistor in a 4-pin, dual-emitter plastic

2SC3814

Abstract: NE0900-07 2SC3816 2SC3815
Contextual Info: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR n e m 090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N EM 0900-07 series of NPN silicon epitaxial UHF power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.

fccj

Abstract: BUK456-1000B TRANSISTOR na 44 B44 transistor
Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bbS3T31 D03Db^S TT1 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

C40C

Abstract: b24 b03 TRANSISTOR A63 TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R30A
Contextual Info: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum

CXD2303Q

Abstract: q32b TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q CXD2303AQ R30A TRANSISTOR A72 VR50
Contextual Info: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum

Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.

TRANSISTOR A64

Abstract: transistor bb3 VR30A A44 E hole ic C40C Encoder photo IC sony a34 b24 b03 crt bw diagram TRANSISTOR A63
Contextual Info: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum

BB453

Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
Contextual Info: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V

TP30A

Abstract: TRANSISTOR b72 mount transistor A55 Q32A C31B C40C CXD2303Q B34 PHOTO IC TRANSISTOR A63 TRANSISTOR A64
Contextual Info: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum