B44 TRANSISTOR Search Results

marking 68g

Abstract: B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: 23Ô33T4 b44 if II BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS A LL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration

BCW67A

Contextual Info: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38

IS-98-A

Abstract: UCSP4 marking B44
Contextual Info: 19-2015; Rev 6; 9/06 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

transistor B42

Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

if3601

Contextual Info: B 34 9-97 IF3601 N -C H A N N E L SILICO N JUNCTIO N FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings = TA at 25"C Reverse Gate Source Voltage & Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation

Contextual Info: TRANSISTOR MODULES QCA200BA60 UL;E76102 M) is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the

B44 transistor

Abstract: fet IRF840 TRANSISTOR mosfet IRF840 mosfet b44
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TMOS Power FET is designed fo r high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

transistor 2TH

Contextual Info: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)

Contextual Info: N AUER PH ILI PS/ DI SC RE TE bTE » • bbS3T31 0D30b^5 T H P ro d uc t S p ecificatio n P hilips S em ico nd uc tors BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

C40C

Abstract: b24 b03 TRANSISTOR A63 TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R30A
Contextual Info: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum

Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.

TP30A

Abstract: TRANSISTOR b72 mount transistor A55 Q32A C31B C40C CXD2303Q B34 PHOTO IC TRANSISTOR A63 TRANSISTOR A64
Contextual Info: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum

Contextual Info: 19-2015; Rev 6; 9/06 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

IRLF130

Abstract: SS452 mosfet b44 diode b44
Contextual Info: Preliminary Data Sheet No. PD-9.659 INTERNATIOIM AL R E C T IFIE R r i o R REPETITIVE AVALANCHE AND dv/dt RATED IRLF130 HEXFET TRANSISTORS LOGIC LEVEL L SERIES N-CHANNEL 100 Volt, 0.20 Ohm Logic Level HEXFET® TO-205AF TO-39 Hermetic Package The Logic Level ‘L’ series of power MOSFETs are designed

EVK71-050

Abstract: SRFE T151 F25 transistor
Contextual Info: EVK71-050 75a POWER TRANSISTOR MODULE : Features • 7 V —ft 4 V • y < KrtSK Including Free Wheeling Diode High DC Current Gain • ÎÊ # t Wt Insulated Type •fflüÊ : Applications • Power Switching •A C t - ^ J » • DC ^ AC Motor Controls —9 W &

Contextual Info: OPA344 OPA2344 OPA4344 OPA 434 4 OPA 344 OPA345 OPA 345 OPA 342 OPA2345 OPA4345 www.ti.com SBOS107A – APRIL 2000 – REVISED AUGUST 2008 LOW POWER, SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● ●

Contextual Info: OPA344 OPA2344 OPA4344 OPA 434 4 OPA 344 OPA345 OPA 345 OPA 342 OPA2345 OPA4345 www.ti.com SBOS107A – APRIL 2000 – REVISED AUGUST 2008 LOW POWER, SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● ●

OPA344NA

Contextual Info: OPA344 OPA2344 OPA4344 OPA 434 4 OPA 344 OPA345 OPA 345 OPA 342 OPA2345 OPA4345 www.ti.com SBOS107A – APRIL 2000 – REVISED AUGUST 2008 LOW POWER, SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● ●

Contextual Info: OPA344 OPA2344 OPA4344 OPA 434 4 OPA 344 OPA345 OPA 345 OPA 342 OPA2345 OPA4345 www.ti.com SBOS107A – APRIL 2000 – REVISED AUGUST 2008 LOW POWER, SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● ●

Contextual Info: WhìI H EW LETT mLliM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 521 Series Features • Frequency Range: 5 to 500 MHz • High Gain: 30.0 dB Typ Applications • IF/RF Amplification Description Pin Configuration

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

RE8RB31BU

Abstract: LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K
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MMBF5484LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF E T T ra n s is to r N - C h a n n e l 2 SOURCE MMBF5484LT1 Motorola Preferred Device MAXIMUM RATINGS Rating D rain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Continuous Device Dissipation at or Below