PTB23006U
Abstract: MLC718 SOT440A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors
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transistor c 5855
Abstract: PTB23006U SC15
Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U FEATURES QUICK REFERENCE DATA • Very high power gain Microwave performance up to T mb = 25 °C in a common-base class C • Diffused emitter ballasting resistors improve ruggedness
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2n59442n59452n59462n6082+162n60842n64392sc12572sc12582sc12592sc1605amrf648tpv31002sc2897macomtp3034sd1393tp3008tp9383transistor 2sc636mrf255 equivalent
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Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
Contextual Info: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR
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rx1214b80wrx1214b130yrx1214b170wrx1214b300y+8rx1214b350yrz1214b35yrz1214b65ybls2731-10bls2731-20bls2731philips semiconductors selection guidelte42005s
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274 transistor
Abstract: transistor c 5855
Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and
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ot440aptb23006uerie1250-003ga244+2274 transistortransistor c 5855
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SD1446
Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Contextual Info: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31
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bgy916blf145blf175blf177+16blf242blf244blf245blf245bblf248blf278sd1446sd2910philips blx15blv36blw60cst cross referenceblw97sd4575blv103mx0912b350y
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LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
Contextual Info: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50
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Philips TdA3619
Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Contextual Info: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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philips tda3619on4408tda3619on4827+6tda5247hton4785of622 fast recovery diodeon4913on4802oq9811t
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transistor c 5855
Abstract: TRANSISTOR LIST 417 TRANSISTOR npn epitaxial planar high voltage transistor epitaxial B44 transistor use of 417 TRANSISTOR
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and
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fo-41bptb23006u711002b711062b+800t433btransistor c 5855transistor list417 transistornpn epitaxial planar high voltage transistorepitaxialb44 transistoruse of 417 transistor
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transistor c 5855
Abstract: npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C
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