B3B72S4 Search Results

539 MOTOROLA transistor

Abstract: LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460
Contextual Info: 12E 0 I b3b72S4 aoa?24S T | M OTGRCLA SC MOTOROLA T - U -X I XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA LT4700 The RF Line N P N Silicon High Frequency Transistor 1C = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . designed primarily for use in low noise, small-signal amplifiers in satellite down con­

EM- 546 motor

Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,

bfy50

Abstract: FY51
Contextual Info: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage

2N869A

Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
Contextual Info: MO T O R O L A SC X S TR S/ R F 12E D | b3b72S4 Q O Ö b a S 1» T-Z7-IS 2N869A M A X IM U M R A T IN G S R ating C o llector-E m itter Voltage Sym bol 2N869A 2N4453 U n it VcEO 18 18 Vdc Vdc 25 C o llector-E m itter Voltage VcES Collector-Base Voltage V cB O

Motorola Transistor 3-252

Abstract: Motorola 3-252
Contextual Info: 4bE D • b3b72S4 QORHTHfl 3 ■ nOTf'FZl-Cft MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR) TECHNICAL DATA 2C3251AHV Chip PNP Silicon Small-Signal Transistor A IM »#####/ . .designed for dc to VHF amplifier and general-purpose switching applications. DiSCr&t&

transistor Bf 966

Abstract: MRF486 2204B 1N4997 221A-04 RF POWER TRANSISTOR NPN MOTOROLA LINEAR HF arco 429
Contextual Info: MO T O R O L A SC XSTRS/R 4bE T> F b3b72S4 00=14703 S MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF486 The R F Line NPN SILICON RF POWER TRANSISTOR 40 W (PEP) - 30 MHz . . d e s ig n e d p rim a rily fo r ap p licatio n as a h ig h -p o w e r linear a m p lifie r fro m 1.5 to 30 M H z, in single s id eb an d m o b ile , m a rin e

MTA2N60E

Abstract: Motorola Transistor 3-252 MTM6N60 63386 MTH6N55 AN569 MTH6N60 Motorola Case 1-06 Motorola 3-252
Contextual Info: motorola sc -c x s t r s / r f > •=10 D E | b3b72S4 0DÛ33ÛL, fl | 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F 98D 6 3 3 8 6 T '3 MOTOROLA D q-13 SEMICONDUCTOR TECHNICAL DATA M TH6N55 M TH6N60 M TM 6N 60 Designer's Data Sheet Pow e r Field Effect T ran sisto r

MM3497

Abstract: AA146
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 GD'iSM'î'i Q ■ MOTb 7^27-01 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM3497 DM0 Discrete Military Products P N P S ilic o n Sm all-Sign al T ra n sisto r Suffixes: HX, HXV /////// Processed per MIL-S-19500/xxx . . . designed for general-purpose switching and amplifier applications

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 OOflbSöG Ö | MHQ3798 CASE 632-08, STYLE 1 TO-116 M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value U nit VCEO VCBO V eb O 40 Vdc Collector Current — Continuous

2N10E

Abstract: MTM12N10
Contextual Info: MOTOROLA SC XSTRS/R F bfl E J> m b3b72S4 0 0 T ÔS 7 Û 72b » n O T b MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M T P 1 2N 10 E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T h e se T M O S Pow er F ET s are d e sign e d for m ed iu m voltage,

MD2219AFHXV

Abstract: md2219af MMCM2222AHXV MMCM2222AHXV/HS
Contextual Info: MOTOROLA SC XSTR S/R F 4bE » • b3b72S4 0012675 2 ■ flO T b '7 ^ 2 7 -O f MOTOROLA SEMICONDUCTOR! TECHNICAL DATA É&â DM0 MD2219AFHXV/HS (DUAL) MMCM2222AHXV/HS (SINGLE) Surface Mountable Small-Signal Transistors u /fiii Discrete Military Operation 50 Volt, 200 Milliampere Bipolar NPN

MRF5109HX

Abstract: MRF510
Contextual Info: nOTOROLA SC X S TR S /R 4bE F D • b3b72S4 00R 2*î21 5 ■ MOTI» ^ 3 /- « 2 3 MOTOROLA SEMICONDUCTOR I TECHNICAL DATA MRF5109HX,HXV DM0 u/un NPN Silicon High Frequency Transistor Discrete Military Operation . .designed specifically for broadband applications requiring good linearity. Usable as a

TRANSISTOR mj900

Abstract: MJ901 MJ900 mj1001
Contextual Info: m o to ro la sc x s trs /r 12E f D I b3b72S4 0004^73 b | 7 ^3 3 - 3 / r - 3 3 '2 8 PNP MJ900, MJ901 MOTOROLA SEMICONDUCTOR NPN TECHNICAL DATA MJ1000, MJ1001 8.0 AMPERE D A R L IN G TO N POWER TRANSISTO RS C O M PLEM EN TA R Y SILICO N M EDIUM -POW ER C O M PLEM ENTARY

Contextual Info: MOT ORCLA SC XSTRS/R F 1EE D | b3b72S4 DGflb2E7 3 | MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage {Rgg = 10 Ohms VCER 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage V EBO 7,0 Vdc Collector Current — Continuous

CA4812H

Abstract: motorola linear CA4812 MOTOROLA wideband hybrid amplifiers 1313 motorola motorola 747 01-mfd chip CA4S12
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 1 ■ MOTb MOTOROLA ■ SE M IC O N D U C T O R TECHNICAL DATA CA4812 CA4812H The RF Line W id e b a n d Linear A m p lifie rs . d e sign e d for am plifier ap p lication s in 50 to 100 o h m sy st e m s requiring w ide

Contextual Info: M O T O R O L A SC f X S T F S / R F . bflF J> • b3b72S4 00^0440 00Ö ■ M O T b MOTOROLA ■ SEM IC O N D U C T O R TECHNICAL DATA IRF830 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for high

MRF548

Abstract: MRF531 MRF548 MOTOROLA MRF542 MRF531 motorola LG CRT MRF534 motorola AN938
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 MOTOROLA 00^4730 2 ■MOTb - T - 3 3 - ¿ ^5 SEMICONDUCTOR TECHNICAL DATA MRF531 The R F Line HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for high voltage and high current f j switching appli­

MD3735

Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b72S4 QCHSMSb MOTOROLA M SEM ICONDUCTOR m h h h m ^ ■ MOTb T - Ì 0 2 5 h TECHNICAL DATA MD3735 M D3735F Discrete M ilita ry Products (Duals) NPN Silicon Dual/Quad Small-Signal Transistors MHQ3735 MQ3735 /////I/ (Quads)

MFE2006

Contextual Info: MOTOROLA SC XSTRS/R F 12E D I b3b72S4 0Gäb7S0 7 | MFE2004 thru MFE2006 CASE 22-03, STYLE 4 TO-18 TO-206AA MAXIMUM RATINGS Rating Drain-Source Voltage Symbol Value Unit Vos 30 Vdc Vdc Gate & Case, 3 Drain-Gate Voltage Vdg 30 Gate-Source Voltage VGS 30 Vdc

726 MOTOROLA TRANSISTORS

Abstract: motorola ic 741 TP34 TP3401 TP3401S ci 7807
Contextual Info: MOT OROL A SC XSTRS/R F 4bE » • b3b72S4 □D'ìSiMM M ■ MOTb '~ F 3 3 '- 0 S MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP34Ó1 TP3401S The RF Line U H F L in e a r P o w e r T ra n s is to rs |ç s 200 m A UHF LINEAR TRANSISTORS NPN SIUCON The TP3401/S are NPN tra n s is to rs , g o ld m e ta llize d fo r re lia b ility . T h e y use d iffu s e d

on 5295 transistor

Abstract: transistor on 5295 BD529 transistors bd525 bd530
Contextual Info: DF|b3b72S4 MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA. SC ÍXSTRS/R 9 6D 8 0 6 0 7 F DDflObO? S f ~ D T - 3 3 - Ó 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON AMPLIFIER TRANSISTORS 6 0 -8 0 - 100 VOLTS 10 WATTS N PN SILICON ANNULAR* AMPLIFIER TRA N SISTORS

2N4013

Abstract: 2n4014 DE800 2N4013 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F L2E 0 | b3b72S4 Q 0 f lt 3f l ö S | r - w - i? 2N4013 2N4014 CASE 22-03, STYLE 1 TO-18 TO-2Q6AA M AXIM UM RA TIN G S Symbol Rating 2N4013 2N4014 Unit Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 50 80 Emitter-Base Voltage

MRF6604HXV

Abstract: MRF660 2N6603 mrf6603 Transistors c-3229
Contextual Info: MOTOROLA SC XSTRS/R F 4bE T> b3b72S4 O G ^ E S 2 «nOTb T -3 1 - MOTOROLA SEMICONDUCTOR! TECHNICAL DATA MRF6603HXV MRF6604HXV NPN Silicon RF, Small-Signal Transistors DMO inmi Discrete Military Operation . . .designed fo r use in h igh-gain, low -noise, sm a ll-sig n a l, narrow and w ideband a m p lifie rs .

JF1033S

Abstract: JF1033 JF1033B
Contextual Info: MOTOROLA SC XSTRS/R F 15E 0 | b3b72S4 00flb7n 2 | T-Si-lS" MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vd S 20 Vdc Gate-Source Voltage VGS 25 Vdc 20 mA Rating Drain Current U nit Forward Gate Current >g f 10 mA Total Device Dissipation @ Ta “ 25°c