B3 TRANSISTOR Search Results

LM181E04

Abstract: LM181E04-B3 30pin FRC connector lg 8993 LG Philips LCD lcd screen LVDS connector 30 pins lcd LVDS display 30 pin connector philips ccfl inverter for 18.1 LCD TFT Display 22 inch lcd screen LVDS ccfl connector 40 pins lcd screen LVDS ccfl connector 40 pins
Contextual Info: LM181E04-B3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ( Preliminary Specification ) Final Specification 18.1 SXGA TFT LCD Title BUYER SUPPLIER Philips MODEL LG.Philips LCD Co., Ltd. *MODEL LM181E04 SUFFIX B3 *When you obtain standard approval,

D 1437 transistor

Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ6700 MMPQ6700 B4 E4 B3 E1 E2 B1 E3 B2 C4 C C3 4 C1 SOIC-16 C3 C2 C2 C1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10

Contextual Info: MMPQ6502 MMPQ6502 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6502 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and

Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to

D 1437 transistor

Abstract: CBVK741B019 F63TNR L86Z MMPQ6502 NDM3000 NDM3001 PN2222A PN2907A SOIC-16
Contextual Info: MMPQ6502 MMPQ6502 B E4 4 B3 E1 B1 E2 SOIC-16 B2 E3 C C4 4 C3 C1 C2 C1 C C2 3 Pin #1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C 2 B2 E 2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and

2n3906 PNP transistor DC current gain

Abstract: 2N3904 NPN TRANSISTOR OPERATIONS
Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 mA to

MMPQ6700

Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complementary devices can be used in switches with collector currents of 10 µA to

BLY91

Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Contextual Info: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

TA4100F

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

TA4100F

Abstract: ta4100
Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

MJE305

Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
Contextual Info: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -

NTE7493A

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator B3 Data Input Q NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator VCc Input B2 Q vcc Cascade Input A < B

UHF TRANSISTOR

Abstract: BLV193 URA547 44w TRANSISTOR TRansistor A 940
Contextual Info: bb5 3 T 31 Philips Semiconductors GDETEBD b3 b M APX Product specification BLV193 UHF power transistor — N AMER PHILIPS/DISCRETE bTE ]> QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. FEATURES • Emitter ballasting resistors for an

BLW81

Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.

MPS8599

Abstract: MPS8098
Contextual Info: M O TO RO LA " b3 b7255 SEMICONDUCTOR TECHNICAL DATA 0 m 3 3 fl3 fc,S2 Am plifier Transistors NPN MPS8098 M PS8099* PNP MPS8598 MPS8599* PNP NPN EMITTER EMITTER MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage C ollector-Base Voltage E m itter-B ase Voltage

FT5761M

Abstract: FT5761 B3 transistor
Contextual Info: FT5761M IL08 DARLINGTON TRANSISTOR ARRAY —SIDE VIEW— 2 1 3 4 4 5 6 7 8 9 10 11 12 C1 E1 C2 B2 E2 E3 B3 C3 E4 6 B4 3 C4 2 B1 5 1 9 8 COLLECTOR 7 BASE 11 12 EMITTER 10

transistor j 108

Contextual Info: ~ HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS LA-B3 Series ~ 110 ~100 Ct., [:;3 1=1. -~I 1 TO-220 TRANSISTOR I I I A. N.C. Horiz. Device Only Mounted to G-10. 70 B. N.C. Horiz. & Vert. With Dissipator. C. 200 FPM w/Diss. ~ aJ < UJ !Q ~

DS36A92

Abstract: DS3660 MAX36051 PSB77 ZS156014AB WS048836A DS1873
Contextual Info: 2/10/2011 PRODUCT RELIABILITY REPORT FOR DS3660, Rev B3 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292

MAX2990

Abstract: TSMC 0.18um tsmc Activation Energy MAXQ2010 MAXQ1103
Contextual Info: 6/19/2009 PRODUCT RELIABILITY REPORT FOR MAXQ2010, Rev B3 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292

2sa1306

Abstract: 2SA1306B 2SC3298B CI43 Motorola 406 R6872
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3 b ?5 S4 0 0 el37b7 MOTOROLA m0 4 Tb r(*er t*,'s data sheet by 2SC3298B/D T=-3 3 -Q { SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors • Designed for use as High Frequency Drivers in Audio Amplifiers

b3a transistor

Abstract: Transistor Bo 47 MARKING B3A marking b3n
Contextual Info: UMB3N IMB3A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB3N (UMT6) 2.0±0.2 |l.3±0Jj package marking: UMB3N and IMB3A; B3 0 .6 5 I w (2 ) («B BBC i t package contains two independent

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

XR-H100

Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
Contextual Info: EXAR & CORP D e | 342Eblfi □004?b3 i I 3 4 2 2 6 18 EXAR 91D CORP XR-H100 Master-Chip Chip Size: 95 x 80 mils Total Components: 424 Bonding Pads: 18 Max. Operating Voltage: 20V NPN Transistors Small Signal: 73 Medium: 2 PNP Transistors Lateral: 22 T Pinch Resistors