B3 TRANSISTOR Search Results

LM181E04

Abstract: LM181E04-B3 30pin FRC connector lg 8993 LG Philips LCD lcd screen LVDS connector 30 pins lcd LVDS display 30 pin connector philips ccfl inverter for 18.1 LCD TFT Display 22 inch lcd screen LVDS ccfl connector 40 pins lcd screen LVDS ccfl connector 40 pins
Contextual Info: LM181E04-B3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ( Preliminary Specification ) Final Specification 18.1 SXGA TFT LCD Title BUYER SUPPLIER Philips MODEL LG.Philips LCD Co., Ltd. *MODEL LM181E04 SUFFIX B3 *When you obtain standard approval,

D 1437 transistor

Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ6700 MMPQ6700 B4 E4 B3 E1 E2 B1 E3 B2 C4 C C3 4 C1 SOIC-16 C3 C2 C2 C1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10

Contextual Info: MMPQ6502 MMPQ6502 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6502 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and

Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to

2n3906 PNP transistor DC current gain

Abstract: 2N3904 NPN TRANSISTOR OPERATIONS
Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 mA to

BLY91

Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Contextual Info: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _

TA4100F

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

TA4100F

Abstract: ta4100
Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

MJE305

Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
Contextual Info: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -

NTE7493A

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator B3 Data Input Q NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator VCc Input B2 Q vcc Cascade Input A < B

"Dallas Semiconductor" TOP MARKING

Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: February 29, 2000 Subject: PRODUCT CHANGE NOTICE – B000801 Description: 90-5002F-C03 Rev B2 to B3 / N+ Source/Drain Implant Mask

BLW81

Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.

transistor j 108

Contextual Info: ~ HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS LA-B3 Series ~ 110 ~100 Ct., [:;3 1=1. -~I 1 TO-220 TRANSISTOR I I I A. N.C. Horiz. Device Only Mounted to G-10. 70 B. N.C. Horiz. & Vert. With Dissipator. C. 200 FPM w/Diss. ~ aJ < UJ !Q ~

DS36A92

Abstract: DS3660 MAX36051 PSB77 ZS156014AB WS048836A DS1873
Contextual Info: 2/10/2011 PRODUCT RELIABILITY REPORT FOR DS3660, Rev B3 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292

2sa1306

Abstract: 2SA1306B 2SC3298B CI43 Motorola 406 R6872
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3 b ?5 S4 0 0 el37b7 MOTOROLA m0 4 Tb r(*er t*,'s data sheet by 2SC3298B/D T=-3 3 -Q { SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors • Designed for use as High Frequency Drivers in Audio Amplifiers

b3a transistor

Abstract: Transistor Bo 47 MARKING B3A marking b3n
Contextual Info: UMB3N IMB3A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB3N (UMT6) 2.0±0.2 |l.3±0Jj package marking: UMB3N and IMB3A; B3 0 .6 5 I w (2 ) («B BBC i t package contains two independent

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

XR-H100

Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
Contextual Info: EXAR & CORP D e | 342Eblfi □004?b3 i I 3 4 2 2 6 18 EXAR 91D CORP XR-H100 Master-Chip Chip Size: 95 x 80 mils Total Components: 424 Bonding Pads: 18 Max. Operating Voltage: 20V NPN Transistors Small Signal: 73 Medium: 2 PNP Transistors Lateral: 22 T Pinch Resistors

AD5263

Abstract: 2N3906 AD8610 OP279
Contextual Info: Quad, 15 V, 256-Position, Digital Potentiometer with Pin-Selectable SPI/I2C AD5263 FEATURES FUNCTIONAL BLOCK DIAGRAM A1 W1 B1 A2 W2 B2 A3 W3 B3 A4 W4 B4 VDD VSS SHDN RES/AD1 RDAC 1 REGISTER RDAC 2 REGISTER GND APPLICATIONS Mechanical potentiometer replacement

BFR34A

Abstract: Transistor BFR 38 9512s K304 BFR 80 S22E Q62702-F346-S1 s2l8
Contextual Info: NPIS1 -Transistor für rauscharme H F-Verstärkeranwendungen BFR 34A B F R 34A ist ein epitaktischer NPN-Silizium-Planar-UHF-Transistor im Kunststoffgehäuse 5 0 B3 DIN 41867 T 0 -5 0 ähinl. zur Verwendung in HF-Verstärkern bis in den GHz-Bereich, z.B. rauscharme Vorstufen, Breitbandantennenverstärker und Oszillatoren.

MJE1100 MOTOROLA

Abstract: MJE1100 transistor MJE6043 2N6041 MJE1101 MJE1103 transistor MJE1103 mje1102 mje6044 MJE1090
Contextual Info: MOTOROLA SC 34 OIODES/OPTO} 6367255 MOTOROLA SC D lf | b3 t,7B5 5 DIO DES/O PTO 34C O O BT'im 37941 r- 3 3 - 0 / SILICON POWER TRANSISTOR DICE (continued) 2C6045 DIE NO. — NPN LINE SOURCE — PL500.E210 •• D 2C6042 DIE NO. — PNP LINE SOURCE — PL500.E209

MPSU51A

Abstract: MPS-U51 MPSU51 MPS-U51A
Contextual Info: MOTOROLA SC XSTRS/R 1 SE 0 F § b3 b ?2 SM 0 0 0 5 5 0 3 T MOTOROLA 7 | ' 3 3 - i 7 MPS-U51 MPS-U51A • SEMICONDUCTOR TECHNICAL DATA LICON AN N ULAR TRANSISTORS ss* igned for complementary symmetry audio circuits to 5 Watts PNP SILICON AU DIO TRANSISTORS

UFN520

Abstract: UFN523 USD935 UFN522 G451 250M S101 UFN521 C1347 unitrode Applications Note
Contextual Info: T2 UNITRODE CORP 9347963 U N IT R OD E » F § ci 3 4 7 ,:l b3 92D CORP 0010705 107 02 D V UFN520 UFN521 UFN522 UFN523 POWER MOSFET TRANSISTORS 100 Volt, 0.3 Ohm N-Channel FEATU RES DESCRIPTION • • • • • « The Unitrode power MOSFET design utilizes the most advanced technology available.

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.