B3 TRANSISTOR Search Results

LM181E04

Abstract: LM181E04-B3 30pin FRC connector lg 8993 LG Philips LCD lcd screen LVDS connector 30 pins lcd LVDS display 30 pin connector philips ccfl inverter for 18.1 LCD TFT Display 22 inch lcd screen LVDS ccfl connector 40 pins lcd screen LVDS ccfl connector 40 pins
Contextual Info: LM181E04-B3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ( Preliminary Specification ) Final Specification 18.1 SXGA TFT LCD Title BUYER SUPPLIER Philips MODEL LG.Philips LCD Co., Ltd. *MODEL LM181E04 SUFFIX B3 *When you obtain standard approval,

BLY91

Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Contextual Info: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _

TA4100F

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

TA4100F

Abstract: ta4100
Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

MJE305

Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
Contextual Info: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -

BLW81

Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.

MAX2990

Abstract: TSMC 0.18um tsmc Activation Energy MAXQ2010 MAXQ1103
Contextual Info: 6/19/2009 PRODUCT RELIABILITY REPORT FOR MAXQ2010, Rev B3 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.

ha2526

Abstract: HA7-2620 HA-2620 HA2622 HA-2625-5 HA2625 2625-5 HA2-2625-5
Contextual Info: HARRIS SEMICOND SECTOR m W blE ] • 43G2B71 004bSM5 117 H H A S HA-2620, HA-2622 HARRIS HA-2625 SEMICONDUCTOR Very Wideband, Uncompensated Operational Amplifiers RN M SO B3 Features Description • Gain Bandwidth Product Ay 2 5). 100MHz • High Input Im pedance.500MQ

Contextual Info: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

y 6763

Contextual Info: TE UNITRODE CORP 9347963 D E | c1347c]b3 DDIOSOÛ 3 | ~ U NI TRO DE CORP 92D 10508 D POWER MOSFET TRANSISTORS , 1TX JTXV 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second Breakdow n • Excellent T e m p e ra tu re S tability

237td

Contextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions

NF 018

Contextual Info: VID 160-12P1 VIO 160-12P1 VDI 160-12P1 IC25 = 169 A = 1200 V VCES VCE sat typ. = 2.9 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 NTC X16 X15 L9 F1 IK10 X16 AC1 LMN NTC F1 B3 PS18

130-06P1

Contextual Info: VDI 130-06P1 VII 130-06P1 VID 130-06P1 VIO 130-06P1 IC25 = 121 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 L9 G10 X15 X16 F1 NTC B3 X16 AC1 F1 VX18 LMN K10 NTC X15

NTC 303

Abstract: robot control PS18 SV18
Contextual Info: VDI 130-06P1 VII 130-06P1 VID 130-06P1 VIO 130-06P1 IC25 = 121 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 B3 PS18 X15 L9 VX18 LMN

circuit diagram of rc transmitter and receiver

Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
Contextual Info: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS

2N2652

Abstract: 2N2060 2N2652A
Contextual Info: motorcla xstrs/ r sc F 1EE 0 I b3 b? 254 QOâtiEfsb 2 | * 2N2652, A CASE 654-07, STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VcBO 100 Vdc Emitter-Base Voltage Ve b o 7.0 Vdc 'c 500 mAdc Rating Collector 1 7 Collector

Contextual Info: ISOCon COMPONE NTS LTD 4 8 8 6 5 1 0 ISOCOM INC 7SC D • MfifibSlO DQDQlOt SST ■ 75C 0 0 1 0 6 ICPL 2601 ISO 0 7 = - V / - B3 High CMR,High Speed Opto Isolator FEATURES LS T T L/T T L Compatible High Speed Low Input Current Required Guaranteed Performance Over Temperature

NF 022

Abstract: 200NS160
Contextual Info: VID 125-12P1 VIO 125-12P1 VDI 125-12P1 IC25 = 138 A = 1200 V VCES VCE sat typ. = 2.8 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 NTC X16 X15 L9 F1 IK10 X16 AC1 LMN NTC F1 B3 PS18

CBVK741B019

Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
Contextual Info: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R RCA HARRIS INTERSIL GE CD54/74FCT651, CD54/74FCT651AT CD54/74FCT652, CD54/74FCT652AT July 1990 AO A1 A 2A 3A4 A5A6A7 - A DATA PORT • . • • . . • 11 BO B1 B2 B3 B4 BS B6 B7 Octal Bus Transceivers/

a1 gnb

Abstract: NTE8370 NTE8318 NTE852 ex-or NTE960 NTE8328 ET 1108 NTE8556 NTE8374
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE8318 8 -B it Priority Encoder 16-Lead DIP, See Diag. 249 sH 0 v cc sH Q GS 7Q 0 3 * B g ET 3 B3 QS A2CT c e B H R B lS a B B D A0 3 Q a Q Reg 1 D1 Reg 2. DO Q Reg 1 DO Reg 2 CP Q Q Reg 1 CP GND p g CP Comp

CD4585BMS

Abstract: IOH15
Contextual Info: CD4585BMS S E M I C O N D U C T O R CMOS 4-Bit Magnitude Comparator December 1992 Features Pinout • High Voltage Type 20V Rating CD4585BMS TOP VIEW • Expansion to 8, 12, 16 . . .4N Bits by Cascading Units B2 1 16 VDD A2 2 15 A3 (A = B)OUT 3 14 B3 (A > B)IN

bc517

Abstract: BC517S
Contextual Info: MOTOROLA SC XSTRS/R 12E D I F b3 b? 254 GGñ5ñtil BC517, S CASE 29-04, STYLE 17 TO-92 TO-226AA MAXIMUM RATINGS R a tin g Sym bol BC517 U n it VCES 30 Vdc C ollector-B ase V oltage VCB 40 Vdc E m itter-B ase Voltage V eb 10 Vdc C ollector C urren t - Continuous